台积电和ARM合作，显著降低65纳米低功耗测试芯片的功耗

日前，台积电和ARM宣布：双方在65纳米低功耗测试芯片上的设计合作显著降低了其动态功率和耗散（Leakage）功率。两家公司认为创新的低功耗设计技术对于最终的成功起到了关键的作用。 长达一年的合作成果是一片拥有先进功耗管理技术的基于ARM926EJ-S^TM处理器的65纳米测试芯片。通过采用动态电压和频率缩放技术，测试芯片可以在针对各种运行模式的最低可能功耗水平下运行。这样，ARM测试芯片将动态功耗降低了50％以上。此外令人瞩目的是在这个台积电65LP低耗散工艺上，先进的功率门控技术进一步把待机耗散降低了8倍。     

通用视频输出控制器IP核的低功耗设计

随着芯片的集成度越来越高,芯片的功耗成为芯片设计中越来越重要的优化参数。设计了一种可应用于视频处理芯片、多媒体手持设备、嵌入式SoC等系统中的视频输出控制器。设计中通过多种工艺无关的低功耗设计技术优化控制器的动态功耗。首先分析各子模块的工作频率,降低低速子模块的工作时钟,然后通过添加门控时钟单元降低时钟的翻转次数。应用Design Compiler[1]进行工程的功耗分析,结果表明设计中使用的低功耗设计方法有效降低了模块的动态功耗。     

SoC低功耗设计及其技术实现

文章根据低功耗设计理论和方法,分别从系统级、模块级及RTL级三个层次上考虑一款SoC芯片功耗设计。在系统级采用工作模式管理方式,在模块级采用软件管理的方式,RTL级采用门控方式,三种方式的应用大大降低芯片了的功耗。仿真分析表明,该芯片的低功耗设计策略取得了预期的效果,实现了较低的动态功耗与很低的静态功耗。该SoC采用0．18μm CMOS工艺库实现,面积为7．8mm×7．8mm,工作频率为80Mnz,平均功耗为454．268mW。     

《低功耗设计方法学》中文版即将出版

近日,由ARM和新思科技共同撰写的SoC设计功耗管理实用指南《低功耗设计方法学》的中文版将由北京大学出版社出版发行。由新思科技和ARM公司共同撰写的《低功耗设计方法》一书是采用先进功耗管理技术的实用指南。其方法论已被采用ARM Physical IP、ARM处理器以及Synopsys Eclypse低功耗解决方案的众多芯片证明有效。2007年     

一种超低功耗无源超高频射频识别标签芯片的设计与实现

本文提出了一种符合ISO18000-6B协议的无源超高频射频识别标签芯片设计。该芯片包括了射频/模拟前端,数字基带和512比特的EEPROM存储器。采用肖特基二极管来提高整流器的功率转换效率。详细阐述了基于峰值电流源的参考电压源的设计,该电路结构简单,并且可以满足低压、低功耗的设计要求。为了降低功耗,模拟模块工作在1v以下电源电压,并采用了一些低功耗的设计方法进一步降低数字基带的功耗。整个标签芯片采用TSMC 0.18um CMOS工艺实现,芯片尺寸为800*800um2。测试结果表明芯片的总功耗为7.4uW,灵敏度达-12dBm。     

射频识别芯片设计中时钟树功耗的优化与实现

UHF RFID是一款超高频射频识别标签芯片,该芯片采用无源供电方式,对于无源标签而言,工作距离是一个非常重要的指标,这个工作距离与芯片灵敏度有关,而灵敏度又要求功耗要低,因此低功耗设计成为RFID芯片研发过程中的主要突破点。在RFID芯片中的功耗主要有模拟射频前端电路,存储器,数字逻辑三部分,而在数字逻辑电路中时钟树上的功耗会占逻辑功耗不小的部分。本文着重从降低数字逻辑时钟树功耗方面阐述了一款基于ISO18000-6Type C协议的UHF RFID标签基带处理器的的优化和实现。     

基于高速DSP的红外图像处理电路研究

介绍了一种基于高性能定点数字信号处理器(DSP)TMS320C6201的图像处理系统,该系统主要包括驱动电路模块、A／D和D／A转换模块、数字信号处理模块和视频显示模块。由于该系统采用了高性能、低功耗的处理芯片,使整个系统具有实时性高、性能稳定、精度高、体积小、功耗低等优点,在红外热成像系统中有着广泛的应用前景。     

全数字ADC设计与仿真

微电子系统的全数字化集成旨在降低工艺成本。基于全数字CMOS门技术设计实现的ADC芯片,具有功耗低的特点,原理分类为压控振荡与并行神经网络两大类。区别于非门环路振荡技术,我们选择施密特非门振荡器实现压频转换模块,仿真该模块的频率、温度、功耗以及后续计数编码的位宽等指标。研究结果是该模块具有良好的温度适应能力（0.187Hz/℃）和超低功耗（400μW）等优点。本工作为准全数字化ADC设计仿真贡献了实验数据积累。     

一种低功耗UHF RFID标签数字基带处理器

超高频射频识别(UHF RFID)电子标签的低功耗设计是当前的研究热点与难点。数字基带部分的功耗占芯片总功耗的40%以上,而时钟模块的功耗约为基带部分的50%。针对此问题,设计了一种兼容EPCTM C1 G2/ISO 18000-6C协议的新型UHF RFID标签数字基带处理器。围绕时钟信号设计了新型数字基带架构,引入局部低功耗异步电路结构,并采用模块时钟的门控动态管理技术,尽可能降低功耗。该数字基带电路在FPGA上完成了功能实测,采用SMIC 0.18 μm CMOS完成了芯片级的逻辑综合及物理实现。结果表明,版图面积为0.12 mm²,平均功耗为 8.8 μW。     

技术动态

台积电联手ARM降低65纳米芯片功耗台积电(TSMC)和ARM宣布:双方在65纳米低功耗测试芯片上的设计合作显著降低了其动态功率和耗散(Leakage)功率。两家公司认为创新的低功耗设计技术对于最终的成功起到了关键的作用。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.