硅基SiO2光波导

在硅基上通过氢氧焰淀积的SiO2,厚度达到了20μm;通过掺Ge增加芯层的折射率,折射率比小于1%,并可调;用反应离子刻蚀工艺对波导的芯层进行刻蚀,刻蚀深度为6μm,刻蚀深宽比大于10;波导传输损耗小于0.6dB/cm(λ=1.55μm),并对波导的损耗机理和测试进行了分析与研究.另外,为实现光纤与波导的耦合,结合微电子机械系统技术,在波导基片上制作了光纤对准V形槽.     

聚合物脊形光波导设计

用5层非对称平面波导理论和等效折射率法(ERIM)分析了金属电极对聚合物脊形光波导横向模式特性及其传输损耗的影响。计算结果表明：在工作波长1．55μm波段,当常规脊形光波导的芯层厚度大于0．8μm、包层厚度大于3．0μm时,才能保证传输损耗的理论极限小于0．1dB／cm;当脊波导刻蚀深度为0.l一0．2μm、对应脊波导宽度为7—5μm时,可满足脊波导横向单模传输。     

弯曲损耗减小的渐变折射率塑料光纤的波导参数设计

为了消除光纤的弯曲损耗，甚至是恶劣弯曲条件下的弯曲损耗，日本Keio大学的科研人员对渐变折射率塑料光纤（GI—POF）的波导结构，如折射率分布、数值孔径（NA）和芯径进行了适当设计。当芯径小于200μm、NA大于0．25时，GI—POF在恶劣弯曲条件下的弯曲损耗明显减小。当芯径为200μm、NA为0．24时，即使在恶劣弯曲条件下GI—POF的弯曲损耗也消失了。首次试验证实。由弯曲引起的模式耦合导致了弯曲损耗。光纤弯曲前的模式耦合强度对弯曲损耗有很大的影响。通过相邻模之间的传播常数差△β评定了模式耦合强度。随芯径和NA而变的△β影响弯曲损耗。因此，根据邸的计算结果，日本Keio大学的科研人员提出适当设计GI—POF的波导参数的指导性意见，以便抑制弯曲损耗。     

高功率光纤激光器用20/400双包层掺镱光纤

采用改进化学气相沉积结合溶液掺杂法制造出了掺镱石英光纤预制棒,预制棒轴向上芯径波动小于5%,折射率差波动小于8%。研磨加工后拉制出20/400双包层掺镱光纤,光纤纤芯不圆度为2%,芯包同心度偏差为0.87 μm。双包层掺镱光纤在1095 nm的包层损耗为2.1 dB/km。采用拉制的掺镱双包层光纤作为直接振荡结构全光纤化激光器的增益光纤实现了1195 W的1080 nm激光输出,斜率效率达82%。     

MMI型1.31/1.55 μm GaAs波分复用/解复用器的研制

利用多模波导的自镜像原理,分析设计了一种能直接与单模光纤相耦合的具有最小循环比的1.31/1.55 μm波长的GaAs/GaAlAs波分复用/解复用器。该器件的输入、输出单模波导和SIE多模波导采用离散谱折射率法进行优化设计,最后获得了当输入、输出单模波导宽为3 μm、SIE多模波导宽度和最佳耦合长度分别为18 μm和5 602.8 μm时,该器件对1.31 μm和1.55 μm两个波长的隔离度均在70 dB以上,且传输损耗小于0.1 dB。     

平顶模式微纳光纤的色散特性

基于光纤模式理论,研究了三层平顶模光纤的波导色散特性,分析了光纤折射率的分布和芯径大小的改变对其波导色散的影响。结果表明,平顶模式微纳光纤与常规微纳光纤及大芯径平顶模式光纤的波导色散特性均不同。在0.3～1.6μm波段内,当光纤折射率分布发生变化时,其波导色散曲线唯一的极小值有规律地增大或减小,并出现蓝移或红移现象;而当芯径尺寸减小时,波导色散极小值明显减小,但极小值点位置都出现在0.6μm处。无论是光纤折射率分布还是芯径大小发生变化,在1.3～1.6μm长波段,其波导色散曲线增势均趋缓,且值渐趋于零,尤其当芯径大小发生变化时这种趋势更明显。     

八边形空气孔环绕-双模大模场面积多芯光纤

为实现多芯光纤的严格双模传输和大模场面积, 将多芯光纤引入空气孔并排列成八 边形结构,利用COMSOL软件建立该光纤的电磁场模型,再采用有限元方法系统地分析相 对孔径大小、纤芯与包层折射率差和纤芯之间的间距等3个结构参数对光纤模式特性及有 效模场面积的影响,最后讨论了不同弯曲半径下光纤的弯曲损耗。根据分析结果并结合归一 化频率常数找到合适的结构参数,此时光纤的基模模场面积在平直状态下可达到1730 μm², 当弯曲半径大于0.45 m时,弯曲损耗小于10－3 dB/m,基模模场面积仍可达到1685 μm²。该 光纤保持少模传输并实现了大模场面积和低弯曲损耗,在大容量、高功率光纤传输系统中具 有广阔的应用前景。     

小芯径折射率引导型光子晶体光纤的制备和研究

介绍一种小芯径折射率引导型光子晶体光纤(PCF)的拉制方法.制备出的光纤纤芯周围第一层空气孔发生形变,呈柚子形,其芯径为1.7μm,孔间距A和空气孔直径d分别为3.4 μm和2.8μm.由于光纤结构的特殊性,采用有限元法在200～1600 nm波段对其基模有效折射率、色散系数、有效模场面积以及非线性系数进行了数值模拟计算.经过理论计算,这种光纤在所研究的波段具有极高的非线性系数且表现为反常色散,这些特性十分有利于超连续谱的产生.在测量了光纤的损耗、色散等基本特性后,选取损耗较小凡位于光纤反常色散区域,中心波长为800 nm的飞秒激光作为光源,将不同功率的超短激光脉冲耦合入光纤,对这种小芯径折射率引导型光子晶体光纤产生超连续谱的过程进行了测量和分析.     

大数值孔径光纤预制件研制

我们用MCVD法研制出GeO2—P2O5-SiO2系为芯，B2O3—SiO2系作也层的大数值孔径光纤，分近似突变型及渐变型折射率分布两种，NA=0．36，损耗=8dB／kM（在0．85μm长）。研究了GeO2-P2O5-SiO2系芯成分与相对折射率差△和损耗特性关系。消除了芯中心折射率凹陷。实验解决了预制件芯部的炸裂问题。     

光波导传输损耗测量新方法

详细介绍了一种测量光波导传输损耗的匹配液测量法.通过将波导插入折射率高于波导芯层的液体将光线耦合出波导,获得波导传输线上各点实际通过的光强,拟合出光强传输衰减曲线.与传统测量方法相比,本方法可对波导进行重复性测量,尤其适用于传输损耗低于0.1 dB/cm光波导的测量.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.