High-gain,high-CMRR class AB operational transconductance amplifier based on the flipped voltage follower

A novel class AB operational transconductance amplifier (OTA) topology is proposed, based on a class AB flipped voltage follower. The OTA has class AB behavior, with current boosting both for the load and the compensation capacitors. It has a high gain of (g_mr₀)⁴ , obtained using a two-stage structure with cascoded stages, and is a two-stage Miller-compensated amplifier employing multipath to remove the positive zero. It has close to rail-to-rail output swing (limited by cascoding) and very low common-mode gain thanks to a replica technique (allowing the use of low-power common-mode feedback [CMFB] loops). Ninety-two decibels of gain and 176 dB of common-mode rejection ratio (CMRR) without CMFB are achieved using a 40-nm complementary metal-oxide semiconductor (CMOS) process. The OTA is used to design a low-power sample-and-hold amplifier (SHA) operating at 5 MSps, a typical application for CMOS OTAs, which has been chosen to verify the proposed circuit's performance and to show that the OTA is robust in Monte Carlo simulations under process variations and mismatches in an actual application.     

A novel feed-forward compensation technique for single-stage fully-differential CMOS folded cascode rail-to-rail amplifier

This paper presents a novel active and passive mixed feed-forward compensation technique for single-stage CMOS folded-cascode rail-to-rail operational trans-conductance amplifiers (OTA). Simulations using 0.5 μm Agilent CMOS process parameters indicate a phase margin of around 82° with an unity gain bandwidth of 320 MHz (@1.17 pF capacitive load including the device parasitics). Also, the compensated OTA provided over 60 dB DC-gain with rail-to-rail output voltage swing as well as wide input common-mode range. This ensures optimum step response (fast and accurate settling without ringing) for the feedback amplifier in switched-capacitor signal processing applications. An improved ``fast sensing' common-mode feedback circuit with high common-mode gain is also used for the single-stage cascode OTA.     

Low‐voltage rail‐to‐rail switched buffer topologies

This paper presents some CMOS rail‐to‐rail low‐voltage (1.2 V) switched buffer topologies, to be used as input stages in switched‐opamp circuits. The main buffer is based on the use of an op‐amp featuring rail‐to‐rail input and output swing with constant transconductance over the input common mode voltage. The designed buffer exhibits a total harmonic distortion of about ‐61 dB for 5 MHz clock frequency with 2 V_pp input amplitude. Its characteristics have been compared with those of other rail‐to‐rail switched buffers, based on the main CMOS OTA (simple, symmetrical, Miller), showing good distortion even at frequencies in the MHz range and satisfying the requirements for the series switches. Copyright © 2001 John Wiley & Sons, Ltd.     

Programmable feedforward linearized CMOS OTA for fully differential continuous‐time filter design

In this paper, a feedforward linearization method for programmable CMOS operational transconductance amplifier (OTA) is described. The proposed circuit technique is developed using simple source‐coupled differential pair transconductors, a feedback‐loop amplifier for self‐adjusting transcoductance (g_m) and a linear reference resistor (R). As a result, an efficient linearization of a transfer characteristic of the OTA is obtained. SPICE simulations show that for 0.35µm AMS CMOS process with a single +3V power supply, total harmonic distortion at 1 V_pp and temperature range from ?30 to +90°C is less than ?49.3 dB in comparison with ?35.8 dB without linearization. Moreover, the input voltage range of linear operation is increased. Power consumption of the linearized OTA circuit is 0.86 mW. Finally, the OTA is used to design a third‐order elliptic low‐pass filter in high‐frequency range. The cut‐off frequency of the operational transconductance amplifier‐capacitor (OTA‐C) filter is tunable in the range of 322.6 kHz–10 MHz using the feedforward linearized OTAs with the digitally programmable current mirrors. Copyright © 2009 John Wiley & Sons, Ltd.     

A 0.8‐V supply bulk‐driven operational transconductance amplifier and Gm‐C filter in 0.18 µm CMOS process

A low voltage bulk‐driven operational transconductance amplifier (OTA) and its application to implement a tunable Gm‐C filter are presented. The linearity of the proposed OTA is achieved by nonlinear terms cancelation technique, using two paralleled differential topologies with opposite signs in the third‐order harmonic distortion term of the differential output current. The proposed OTA uses 0.8 V supply voltage and consumes 31.2 μW. The proposed OTA shows a total harmonic distortion of better than ?40 dB over the tuning range of the transconductance, by applying 800 mV_ppd sine wave input signal with 1 MHz frequency. The OTA has been used to implement a third‐order low‐pass Gm‐C filter, which can be used for wireless sensor network applications. The filter can operate as the channel select filter and variable gain amplifier, simultaneously. The gain of the filter can be tuned from ?1 to 23 dB, which results in power consumptions of 187.2 to 450.6 μW, respectively. The proposed OTA and filter have been simulated in a 0.18 µm CMOS technology. Simulations of process corners and temperature variations are also included in the paper. Copyright © 2014 John Wiley & Sons, Ltd.     

Multiple output differential OTA with linearizing bulk‐driven active‐error feedback loop for continuous‐time filter applications

A CMOS circuit realization of a highly linear multiple‐output differential operational transconductance amplifier (OTA) has been proposed. The presented approach exploits a differential pair as an input stage with both the gate and the bulk terminals as signal ports. For the proposed OTA, improved linearity is obtained by means of the active‐error feedback loop operating at the bulk terminals of the input stage. SPICE simulations of the OTA show that, for 0.35 µm AMS process, total harmonic distortion at 1.36Vpp is less than 1% with dynamic range equal to 60.1 dB at power consumption of 276 μW from 3.3 V supply. As an example, both single output and dual differential OTAs are used to design third‐order elliptic low‐pass filters. The cut‐off frequency of the filters is 1 MHz. The power consumption of the OTA‐C filter utilizing the dual output differential OTA is reduced to 1.24 mW in comparison to 2.2 mW consumed by the single output differential OTA‐C filter counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

Analysis and design of highly linear triode‐mode based OTA and its application to a wide tunable Gm‐C filter

In this paper, a new highly linear operational transconductance amplifier (OTA) based on triode‐mode input transistors is introduced. An analysis based on theoretical relations and simulation results is presented that aims to obtain the best operating points of triode‐mode and cascode transistors to achieve the highest linearity. The proposed analysis is utilized to design a linear pseudo‐differential OTA, benefiting a linear common mode feedforward and an appropriate common mode feedback circuit. The common mode feedforward circuit is also regulated in the same manner as main the transconductor to stabilize the output common mode voltage during tuning action and achieve higher common mode rejection ratio. Proposed OTA is used to implement a tunable low‐power linear Gm‐C filter. The cutoff frequency of the filter is tunable from 2.7 to 44 MHz while its power consumption changes from 3.5 to 8.5 mW in the entire tuning range. By applying input voltages up to 1.1 Vp‐p, the filter's IM3 remains less than −48 dB for various cutoff frequencies. The proposed OTA and filter are simulated in 0.18‐μ m CMOS technology with Hspice simulator. Copyright © 2017 John Wiley & Sons, Ltd.     

On the input common‐mode voltage range of CMOS bulk‐driven input stages

In this paper the response of a bulk‐driven MOS Metal‐Oxide‐Semiconductor input stage over the input common‐mode voltage range is discussed and experimentally evaluated. In particular, the behavior of the effective input transconductance and the input current is studied for different gate bias voltages of the input transistors. A comparison between simulated and measured results, in standard 0.35‐µm CMOS Complementary Metal‐Oxide‐Semiconductor technology, demonstrates that the model of the MOS transistors is not sufficiently accurate for devices operating under forward bias conditions of their source‐bulk pn junction. Therefore, the fabrication and the experimental evaluation of any solution based on this approach are highly recommended. A technique to automatically control the gate bias voltage of a bulk‐driven differential pair is proposed to optimize the design tradeoff between the effective input transconductance and the input current. The proposed input stage was integrated as a standalone block and was also included in a 1.5‐V second‐order operational transconductance amplifier (OTA)‐C lowpass filter. Experimental results validate the effectiveness of the approach. Copyright © 2010 John Wiley & Sons, Ltd.     

Analytical synthesis and comparison of voltage‐mode Nth‐order OTA‐C universal filter structures

Complementary single‐ended‐input operational transconductance amplifier (OTA)‐based filter structures are introduced in this paper. Through two analytical synthesis methods and two transformations, one of which is to convert a differential‐input OTA to two complementary single‐ended‐input OTAs, and the other to convert a single‐ended‐input OTA and grounded capacitor‐based one to a fully differential OTA‐based one, four distinct kinds of voltage‐mode nth‐order OTA‐C universal filter structures are proposed. TSMC H‐Spice simulations with 0.35µm process validate that the new complementary single‐ended‐input OTA‐based one holds the superiority in output precision, dynamic and linear ranges than other kinds of filter structures. Moreover, the new voltage‐mode band‐pass, band‐reject and all‐pass (except the fully differential one) biquad structures, all enjoy very low sensitivities. Both direct sixth‐order universal filter structures and their equivalent three biquad stage ones are also simulated and validated that the former is not absolutely larger in sensitivity than the latter. Finally, a very sharp increment of the transconductance of an OTA is discovered as the operating frequency is very high and leads to a modified frequency‐dependent transconductance. Copyright © 2010 John Wiley & Sons, Ltd.     

Second‐order intermodulation cancelation and conversion‐gain enhancement techniques for CMOS active mixers

In this paper, two new techniques are proposed to improve the second‐order input intercept point (IIP2) and conversion‐gain in double‐balanced Gilbert‐cell complementary metal‐oxide semiconductor (CMOS) mixers. The proposed IIP2 improvement technique is based on canceling the common‐mode second‐order intermodulation (IM2) component at the output current of the transconductance stage. Additionally, the conversion‐gain is improved by increasing the fundamental component of the transconductance stage output current and creating a negative capacitance to cancel the parasitic capacitors. Moreover, in the proposed IM2 cancelation technique, by decreasing the bias current of the switching transistors, the flicker noise of the mixer is reduced. The proposed mixer has been designed with input frequency and output bandwidth equal to 2.4 GHz and 20 MHz, respectively. Spectre‐RF simulation results show that the proposed techniques simultaneously improve IIP2 and conversion‐gain by approximately 23.2 and 5.7 dB, respectively, in comparison with the conventional mixer with the same power consumption. Also, the noise figure (NF) at 20 kHz, where the flicker noise is dominant, is reduced by 4.9 dB. The average NF is increased nearly 0.9 dB, and the value of third‐order input intercept point (IIP3) is decreased approximately 1.8 dB. Copyright © 2014 John Wiley & Sons, Ltd.     

Highly linear wide‐swing continuous tuning of CMOS transconductors

A technique to improve the input and output range of CMOS transconductors with resistive current division for continuous tuning is presented. Using it, a tunable transconductor is proposed which features high linearity over a wide input range and simplicity. Measurement results of the transconductor, fabricated in a 0.5 µm CMOS process, show an IM3 of ?66 dB for a ±1.65 V supply and two input tones centered at 1 MHz of 1 V_pp each, and only 0.7 mW of power consumption. This represents an improvement of 13 dB versus the same transconductor using conventional current division. Copyright © 2013 John Wiley & Sons, Ltd.     

SOI高温压力传感器专用集成电路设计

针对压力传感系统高温条件下无法稳定工作、性能下降等问题,设计了一种基于SOI CMOS高温工艺的压力传感器专用集成电路(ASIC),主要由零温度系数恒流源、仪表运算放大器(由恒定跨导运放组成)和零温度系数电压基准组成,具有为压力传感器供电、放大输出信号及调节零点的功能,重点介绍了零温度系数恒流源、仪表运放及组成仪表运放的运算放大器等相关电路。仿真结果表明,-55~225℃温度范围内,恒流源温度系数为109ppm/℃,运算放大器输入MOS管跨导几乎与温度无关,仪表运放输入输出电压成正比且共模抑制比高达125 d B。测试结果显示该压力传感器专用集成电路可在225℃下正常工作。     

Low‐voltage bulk‐driven input stage with improved transconductance

A low‐voltage input stage constructed from bulk‐driven PMOS transistors is proposed in this paper. It is based on a partial positive feedback and offers significant improvement of both input transconductance and noise performance compared with those achieved by the corresponding already published bulk‐driven structures. The proposed input stage offers also extended input common‐mode range under low supply voltage in relevant to a gate‐driven differential pair. A differential amplifier based on the proposed input stage is also designed, which includes an auxiliary amplifier for the output common‐mode voltage stabilization and a latch‐up protection circuitry. Both input stage and amplifier circuits were implemented with 1 V supply voltage using standard 0.35µm CMOS process, and their performance evaluation gave very promising results. Copyright © 2010 John Wiley & Sons, Ltd.     

Analysis and implementation of a fourth‐order bandpass filter for R‐wave detection of an implantable cardiac microstimulator

This paper presents an ultra‐low‐power fourth‐order bandpass operational transconductance amplifier‐C (OTA‐C) filter for an implantable cardiac microstimulator used to detect the R‐wave of intracardiac electrograms. The OTA‐C filter fabricated by TSMC 0.35‐µm complementary metal–oxide–semiconductor (CMOS) technology is operated in the subthreshold region to save power under a supply voltage of 1 V. The current cancellation technique is adopted to reduce the transconductance of the amplifier. Through this, the low‐frequency OTA‐C filter can be realized by ultra‐low transconductance with on‐chip capacitors. Direct comparison to conventional RLC ladders replaced by OTA‐C circuits shows that the method of reducing the number of OTAs further diminishes power consumption. Design issues, including ultra‐low transconductance, linearity, and noise, are also discussed. Measurement results show that the low‐voltage, low‐power filter has a bandwidth between 10 and 50 Hz, third inter‐modulation distortion of ?40 dB, dynamic range of 43 dB, and power consumption of only 12 nW. The real electrocardiography signal is fed into the bandpass filter to verify the function of signal processing with the distribution of the R‐wave. Copyright © 2012 John Wiley & Sons, Ltd.     

Explicit design formulas for current‐mode leap‐frog OTA‐C filters and 300 MHz CMOS seventh‐order linear phase filter

The leap‐frog (LF) configuration is an important structure in analogue filter design. Voltage‐mode LF OTA‐C filters have recently been studied in the literature; however, general explicit formulas do not exist for current‐mode LF OTA‐C filters and there is also need for current‐mode LF‐based OTA‐C structures for realization of arbitrary transmission zeros. Three current‐mode OTA‐C structures are presented, including the basic LF structure and LF filters with an input distributor or an output summer. They can realize all‐pole characteristics and functions with arbitrary transmission zeros. Explicit design formulas are derived directly from these structures for the synthesis of, respectively, all‐pole and arbitrary zero filter characteristics of up to the sixth order. The filter structures are regular and the design formulas are straightforward to use. As an illustrative example, a 300 MHz seventh‐order linear phase low‐pass filter with zeros is presented. The filter is implemented using a fully differential linear operational transconductance amplifier (OTA) based on a source degeneration topology. Simulations in a standard TSMC 0.18µm CMOS process with 2.5 V power supply have shown that the cutoff frequency of the filter ranges from 260 to 320 MHz, group delay ripple is about 4.5% over the whole tuning range, noise of the filter is 420nA/√Hz, dynamic range is 66 dB and power consumption is 200 mW. Copyright © 2008 John Wiley & Sons, Ltd.     

Low-loss 7-bit S-band CMOS passive phase shifter with digital control

This paper presents the design and implementation of a 7-bit S-band digital passive phase shifter using Complementary Metal-Oxide-Semiconductor (CMOS) 65-nm technology in 2.6- to 3.2-GHz frequency band. New switched delay network topology has been used for 5.625° and 2.8°, and modified switched filter topology has been used for implementation of other phase bits to achieve 7-bit performance with low insertion loss and better isolation. The measured results of the fabricated chip show 7-bit performance with an average insertion loss of 11 dB, average root mean square (RMS) phase error of less than 2.0°, average RMS amplitude error of less than 0.6 dB, input matching (S₁₁) better than −7.5 dB, and output matching (S₂₂) better than −14.5 dB across the target frequency band at 50Ω input/output impedance.     

0.5‐V bulk‐driven differential amplifier

A new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage. The amplifier operates at a supply voltage of less than 0.5 V, performing input transconductance almost equal to a gate transconductance and relatively high voltage gain without the need for gain boosting. The circuit was designed and simulated using a standard 0.18‐µm CMOS n‐well process. The low‐frequency gain of the amplifier was 56 dB, the unity gain bandwidth was approximately 3.2 MHz, the spot noise was 100 nV/√Hz at 100 kHz and the current consumption was 90 μΑ. Copyright © 2012 John Wiley & Sons, Ltd.     

0.3‐V bulk‐driven programmable gain amplifier in 0.18‐µm CMOS

A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well 0.18‐µm complementary metal–oxide–semiconductor (CMOS) process, the circuit operates from 0.3 V supply, and its voltage gain can be regulated from 0 to 18 dB with 6‐dB steps. At minimum gain, the PGA offers nearly rail‐to‐rail input/output swing and the input referred thermal noise of 2.37 μV/Hz^1/2, which results in a 63‐dB dynamic range (DR). Besides, the total power consumption is 96 nW, the signal bandwidth is 2.95 kHz at 5‐pF load capacitance and the third‐order input intercept point (IIP₃) is 1.62 V. The circuit performance was simulated with LTspice. Copyright © 2016 John Wiley & Sons, Ltd.     

Comparative performance analysis and complementary triode based CMFB circuits for fully differential class AB symmetrical OTAs with low power consumption

In this paper we extend the figures of merit for class AB symmetrical OTAs to the fully differential case and compare topologies from the literature. This analysis shows that the power consumption of the CMFB can have a significant role in determining the efficiency of the OTA, but on the other hand a CMFB is needed both to set the desired output common mode voltage and to improve the CMRR. We propose the complementary triode CMFB, i.e. a triode CMFB applied both at the NMOS and PMOS current mirrors, as suitable for class AB symmetrical OTAs, and show some case studies in deep submicron CMOS technology to assess the effectiveness of the proposed solution. Copyright © 2015 John Wiley & Sons, Ltd.     

Design and implementation of sub 0.5‐V OTAs in 0.18‐μm CMOS

A family of bulk‐driven CMOS operational transconductance amplifiers (OTAs) has been designed for extremely low supply voltages (0.3‐0.5 V). Three OTA design schemes with different gain boosting techniques and class AB input/output stages are discussed. A detailed comparison among these schemes has been presented in terms of performance characteristics such as voltage gain, gain‐bandwidth product, slew rate, circuit sensitivity to process/mismatch variations, and silicon area. The design procedures for all the compared structures have been developed. The OTAs have been fabricated in a standard 0.18‐μm n‐well CMOS process from TSMC. Chip test results are in good agreement with theoretical predictions and simulations.