Highly linear wide‐swing continuous tuning of CMOS transconductors |
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| Authors: | Jose M Algueta Antonio J Lopez‐Martin Jaime Ramirez‐Angulo Ramon G Carvajal |
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| Affiliation: | 1. Department of Electrical and Electronic Eng, Public University of Navarra, Pamplona, Spain;2. Klipsch School of Electrical Eng, New Mexico State University, Las Cruces, NM, USA;3. Department of Electronic Eng., School of Engineering, University of Seville, Sevilla, Spain |
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| Abstract: | A technique to improve the input and output range of CMOS transconductors with resistive current division for continuous tuning is presented. Using it, a tunable transconductor is proposed which features high linearity over a wide input range and simplicity. Measurement results of the transconductor, fabricated in a 0.5 µm CMOS process, show an IM3 of ?66 dB for a ±1.65 V supply and two input tones centered at 1 MHz of 1 Vpp each, and only 0.7 mW of power consumption. This represents an improvement of 13 dB versus the same transconductor using conventional current division. Copyright © 2013 John Wiley & Sons, Ltd. |
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| Keywords: | Operational Transconductance Amplifier transconductor continuous tuning floating‐gate MOSFET low‐voltage CMOS circuits analog CMOS circuits |
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