基于Nd∶YVO4/Nd∶YLF组合晶体的双波长激光器研究

设计了基于Nd:YVO₄/Nd:YLF组合晶体的双波长(1047 nm和1064 nm)激光器。理论分析了 组合晶体双波长激 光器的速率方程,实验研究了在固定抽运条件下双波长激光器的温度输出特性。在实验研究 过程中设置抽运功率为600 mW,调节组合晶体热沉温度以1.0 ℃为间隔逐步增加,当热沉温度从 7.0 ℃增加至22.0 ℃时,激光器获得了频差 范围 为4.58 THz～4.63 THz、功率均衡度可调的双 波长信号 输出。在实验温度上升的范围内,频差最大值出现在8.0 ℃时,为 4.63 THz;频差最小值出现在21.0 ℃,为4.58 THz。 实验结果表明,频差随温度的变化稳定在4.60 THz附近。尤其的当 热沉温度处于17.8 ℃时,获得了功率均衡的、频差为4.58 THz的双波长信号输出,此时功 率为18.48 mW。这种超大频差的双波长激光器在提升功率之后可用于 外差拍频获取太赫兹波信号。     

端面抽运板条放大器抽运均匀性和热效应模拟

为了使激光二极管抽运的全固态激光器能够得到高光束质量、高功率的激光输出,对激光介质的温度分布和热透镜效应的研究很重要。利用ZEMAX软件的非序列模块,根据光束追迹的方法模拟了端面抽运结构下,高功率二极管抽运激光放大器的抽运光在增益介质中的光场分布情况。结果表明,此抽运方式下光场分布均匀。将激光介质中吸收的抽运光体功率密度分布结果代入LAS-CAD软件,计算出在种子光未注入和注入情况下,抽运功率为2400W时,增益介质最大温差分别为68℃,54.7℃以及最大热应力分别为90N/mm2,67N/mm2,因此当抽运功率小于2400W,运转的全过程对于激光增益介质是没有威胁的。该模拟结果对于高功率二极管抽运板条激光放大器的设计具有一定参考价值。     

双频Nd:YVO4微片激光器功率均衡研究

根据微片激光器工作温度、增益介质发射谱和谐 振波长三者的关系,研究了双频Nd:YVO₄微腔激光 器的功率均衡机制。在实验中,通过温控调节双频激光波长和发射谱的相对漂移,实现了双 频激光的相对 功率可调。实验结果表明,当激光器温度在2.5～22.5℃范围增加时 ,双频激光的右峰/左峰相对功率比从 6.471变化到0.028;当温控在9. 1℃时,双频 激光的相对功率比约为1.00∶1.00,实现了功率均衡;当温控在 7.5℃时,双频激光的相对功率比为1.89∶1.00,此时双频激光的功率乘积最大,可实现最高拍频效率。     

LD抽运主振荡功率放大结构4.1kW全光纤激光器

利用半导体激光器(LD)抽运大模场增益光纤实现了输出功率大于4kW的主振荡功率放大结构全光纤激光器。实验研究了增益光纤纤芯直径和抽运波长不同情况下激光器的受激拉曼散射(SRS)和横向模式不稳定(TMI)特性。为了抑制SRS,选择纤芯为30μm的大模场掺镱光纤作为增益介质;为了抑制光纤放大器中的TMI,利用增益光纤吸收系数较低波段对应的915nm LD作为抽运源,将增益光纤弯曲半径降低到10cm以提高高阶模的损耗。在种子功率为100 W、最高注入抽运功率为5.3kW时获得了4.1kW的功率输出,光束质量M2为2.2,输出激光中无SRS和TMI现象。     

切换式双波长激发在掺镱和铒镱共掺复合式光纤激光器中的实现

抽运旁通腔型的掺镱光纤(YDF)激光器内剩余的抽运光功率随着入射抽运功率的变化呈现出光学双稳特性,这导致了用它来抽运另一个分叉腔的铒镱共掺光纤(EYDF)增益介质可获得第二个信号波长激发的可能性。根据这一原理,从实验上获得了1040 nm和1537 nm两个激发线的可切换振荡,这表明基于掺镱光纤激光器光学双稳态的复合腔结构(掺镱光纤激光器的抽运旁通腔和铒镱共掺光纤分叉腔)是实现切换式双波长光纤激光器光源的一个简单有效的方法。     

短蒸气室自加热碱金属激光器输出特性

短蒸气室自加热碱金属激光器的原理是利用未被增益介质吸收的抽运光加热碱金属蒸气室。基于三能级速率方程,建立了半导体激光双端抽运碱金属激光器的理论模型,研究了增益介质长度、蒸气室温度和抽运源线宽等参数对短蒸气室自加热碱金属激光器输出激光的影响。研究结果表明,在普通外腔半导体激光器抽运下,增益介质长度为2mm时可以实现瓦级激光输出,选择较高的抽运光功率可提高自加热碱金属激光器的输出功率。该研究结果将为自加热碱金属激光器的实验提供理论基础,并可进一步拓展小功率碱金属激光器的应用领域。     

离轴抽运对模式增益和光束质量的影响

在激光二极管端面抽运固体激光器中,抽运光轴线与几何腔轴之间存在一定的偏离,使基模振荡光轴线相对几何腔轴也有一定的偏离,影响激光器性能.引入偏离因子来描述抽运光轴线的偏离量和抽运功率对振荡光偏离量的影响,对模式增益和光束质量随偏离因子的变化规律做了理论分析和模拟,并以光纤耦合半导体激光器端面抽运Nd:YAG固体激光器进行了相应实验.理论与实验结果表明:在抽运功率一定时,抽运光的偏离量越小,偏离因子越小,则低阶模模式增益越大,在模式竞争中占据优势,输出激光的光束质量越好.因此,要获得高增益和光束质量较好的低阶模输出,除保证恰当的谐振腔结构外,控制抽运光的形状和偏离量也是一个重要的手段.     

改善Nd…YAG掠入射板条激光器增益介质热效应的研究

增益介质的热效应是制约掠入射板条激光器获得高功率和高光束质量的重要因素。采用Nd…YAG和蓝宝石晶体键合的方法,研究掠入射板条激光器增益介质的热效应。理论模拟了Nd…YAG与蓝宝石键合晶体增益介质的温度场分布和热焦距。实验对比了Nd…YAG和蓝宝石键合晶体与单块Nd…YAG晶体增益介质的输出特性:在相同腔长和抽运的自由振荡条件下,键合晶体的最大稳定输出功率比单块Nd…YAG晶体提高了26%;当抽运功率为44W时,键合晶体相对于单块Nd…YAG晶体热焦距增长了69%;同时,键合晶体宽度、厚度方向的光束质量因子M_x~2=1.84、M_y~2=2.29,单块Nd…YAG晶体宽度、厚度方向的光束质量因子M_x~2=2.92、M_y~2=4.38。理论分析和实验结果表明,Nd…YAG和蓝宝石键合晶体能够降低掠入射板条激光器增益介质的热效应,有利于输出功率和光束质量的提高。     

波长锁定878.6nm激光二极管抽运Nd:YVO_4 1064nm激光器

报道了一种由波长锁定878.6nm半导体激光器抽运Nd:YVO4晶体的1064nm激光器,当晶体吸收7.41W的抽运功率时获得了5.75W的1064nm激光输出,相对于吸收功率的斜率效率为80.2%,光光转换率为77.6%,并且对波长锁定878.6nm,非波长锁定的808nm,878.6nm抽运的激光器的温度特性进行了研究,结果表明利用波长锁定878.6nm作为抽运源的激光器在10℃~40℃的温度变化范围内具有很好的输出稳定性。     

全光转换触发半导体光放大器式双稳存储器

日本东京大学和美国罗彻斯特大学的研究人员已演示半导体光放大器基础的触发反转开关中双稳存储器的全光学设置和复位。这个方法以改变稳态之间的滞后曲线并保持激光器光束功率不变为基础。通过改变放大器的增益而改变滞后曲线。增益用光学方法 (用放大器增益谱内信号波长的增益饱和 )而减小。增益也可用放大器增益谱外信号波长的抽运法来增大。增益增大时 ,折射率减小 ,并使放大器的布拉格共振移离该光信号。偏离共振的增大也使双稳转换的输入功率阈值增大。同样 ,当增益减小时 ,双稳转换的输入功率阈值减小。转换是在转换阈值横过连续波态…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.