朗缪尔铁电聚合物薄膜的电学特性:高热释电系数和低介电常数

研究了利用朗缪尔技术(LB)生长在柔性基底上的聚偏氟乙烯和三氟乙烯的共聚物(P(VDF-TrFE))薄膜的电学性质.通过测量相对介电常数和热释电系数,发现薄膜在室温1kHz时的优值因子达到1.4 Pa~(-1/2).这表明利用LB技术生长的P(VDF-TrFE)薄膜是热释电探测器的优良候选材料.优值因子的提高可能来源于LB薄膜的良好结晶性和分子链在平面内的高度有序性.     

铁电半花菁染料Langmuir-Blodgett膜

通过静态电荷积分法测量出66层半花菁Z型LB膜在室温下的热释电系数为12μCm-2K-1,其品质因数FD=35μCm-2K-1.再由其所观测到的电滞回线现象可证实它还具有铁电性,进而表明其热释电效应较强.     

NMOB分子LB膜的光谱及其非线性光学特性研究

通过稳态和时间分辨荧光及二次谐波产生(SHG)的方法研究了2-硝基-5-(N-甲基-N-十八烷基)氨基苯甲酸(NMOB)分子朗缪尔-布罗基特(Langmuir-Blodgett,LB)多层膜的光谱及非线性光学特性。LB膜的稳态荧光谱较溶液红移大。而纯的NMOBY型LB多层膜与NMOB/花生酸交替的LB多层膜之间差别较小;由于分子间的相互作用,使得NMOB分子在溶液中比在LB膜中的荧光衰减时间大。在LB膜中,纯的NMOB和NMOB与花生酸交替的LB多层膜的荧光衰减时间相差不大,说明NMOB分子层内的相互作用较大,而层间的相互作用较小;由于苯环两侧的不对称取代,分子内部形成固有的偶极矩,使得NMOB/花生酸交替的LB多层膜具有较大的宏观偶极矩,因而具有大的二阶非线性极化率,其超分子极化率约为β=4×10-29esu。     

4-羧基-4''''-氨基偶氮苯LB膜的光谱及其二次谐波产生特性研究

采用紫外可见吸收谱和二次谐波产生的方法研究了一种新型偶氮化合物分子的LB膜及非线性光学特性.4-羧基-4'-氨基偶氮苯分子在水表面可以形成稳定的单分子膜并且可以较好的转移到固体基板上形成LB多层膜.测量了LB膜二次谐波产生随入射基频光入射角的变化关系,二次谐波信号强度最大值在入射角约为60°的地方,LB膜具有非常大的二次谐波信号强度,其分子超极化率约为β=1.17×10-29esu.     

PZT厚膜与Si衬底互扩散阻挡层研究

在Pt/Ti/SiO2/Si基片上,利用电泳沉积制备PZT热释电厚膜材料.为防止Pb和Si互扩散,在Pt底电极与SiO2/Si衬底间通过直流磁控溅射制备了TiOx薄膜阻挡层.对具有0、300 nm和500 nm TiOx阻挡层的PZT厚膜材料用SEM和能量色散谱仪(EDS)表征了Pb和Si互扩散情况,用动态热释电系数测量仪测试了热释电系数.结果表明,当TiOx阻挡层为500 nm时,可阻挡Pb和Si互扩散,热释电性能最好.热释电系数p=1.5×10-8 C·cm-2·K-1,相对介电常数εr=170,损耗角正切tanδ=0.02,探测度优值因子Fd=1.05×10-5pa-0.5.     

4-羧基-4′-氨基偶氮苯LB膜的光谱及其二次谐波产生特性研究

采用紫外可见吸收谱和二次谐波产生的方法研究了一种新型偶氮化合物分子的LB膜及非线性光学特性。4-羧基-4′-氨基偶氮苯分子在水表面可以形成稳定的单分子膜并且可以较好的转移到固体基板上形成LB多层膜。测量了LB膜二次谐波产生随入射基频光入射角的变化关系,二次谐波信号强度最大值在入射角约为60°的地方,LB膜具有非常大的二次谐波信号强度,其分子超极化率约为β=1.17×10-29esu。     

低温下铌酸锂钠陶瓷的热释电性与弹性研究

在120～320K的温度范围内研究了锂酸锂钠陶瓷的热释电性与弹性,其热释电行为与弹性行为在低温区域内显著反常,表明该陶瓷存在低温铁电-铁电相变。观测到极化方向的热释电系数改变符号及热释电电荷随时间改变极性的现象,弹性变化与次级压电效应是相关的。     

0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3薄膜中自极化效应诱导的稳定热释电系数

采用sol-gel方法在Pt/Ti/SiO_2/Si衬底上制备了0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3,并研究了其铁电和热释电性质.X射线衍射结果表明薄膜具有高度的(111)择优取向.结果显示,在没有任何极化处理情况下,薄膜具有稳定的热释电系数,达到1.58×10~(-8) Ccm~(-2)K~(-1).当极化电场高于3倍薄膜的矫顽电场时,薄膜的热释电系数几乎保持不变.撤掉极化电场后,薄膜的热释电系数在10天后仅仅衰减4%左右,远比PZT薄膜稳定.研究发现不同方向极化处理,薄膜的热释电电流具有非对称性,即正向极化时热释电电流随电场增加而增大,负方向极化处理时,热释电电流随电场增加而减小.这些结果显示0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3表现出的优异热释电特性起源于薄膜中的自极化效应.     

不对称取代萘酞菁化合物的LB膜及二阶非线性光学特性研究

近年来,人们对萘酞菁类化合物的研究兴趣不断增加,这主要是由于萘酞菁类化合物比酞菁类化合物具有更大的共轭体系,共轭π-电子更为丰富,因此它们在许多方面的性能比相应的酞菁化合物优越得多.萘酞菁化合物巨大的共轭π-电子体系容易被极化,有利于产生非线性光学效应.利用Langmuir-Blodgett(LB)技术能够制备纳米尺度上精确可控的、有序排列的、非中心对称结构的超薄膜,实现大的宏观二阶非线性极化率. 实验所用的两种不对称取代萘酞菁化合物是由中科院感光化学所合成的,分别为三叔丁基萘酞菁(简写为NPC1)、三叔丁基氰基萘酞菁(简写为NPC2).LB多层膜的制备是在德国R&K公司制造的Langmuir槽制膜系统上完成的. 实验表明,两种不对称取代萘酞菁化合物均能在气液界面上形成稳定的单分子膜,并能很好地转移到固体基板上形成LB多层膜;它们在稀溶液中主要以单体分子的形式存在,而在LB膜中则主要是以聚集体的形式存在;尽管这两种萘酞菁化合物均能产生二次谐波信号,但是由于它们的结构不同,其二阶非线性极化率系数的大小相差较大,三叔丁基氰基萘酞菁的二阶非线性极化率系数χ(2)为3.7×10-8 esu(或超极化率β为7.2×10-30 esu),约为三叔丁基萘酞菁的37倍.这主要是由于氰基具有很强吸电子的能力,使NPC2分子内形成了较大的偶极矩,LB膜使得分子有序排列,因而LB膜宏观的偶极矩也较大,从而具有较大的二阶非线性极化率.(OB16)     

LaF3纳米微粒LB膜摩擦学行为研究

以LB膜为代表的有序分子膜有望成为新一代优秀润滑材料,提供一种依靠表面分子工程来控制摩擦学特性的新途径。近年已愈来愈受到摩擦学界的广泛关注。由于LB膜的成膜机理是依靠物理吸附,其热稳定性、机械稳定性及力学性能较差。因此人们在利用纳米微粒复合,聚合以及开发新的LB膜方面进行了大量探索。本文研究了脂肪酸及二烷基二硫代磷酸修饰的LaF3纳米微粒(LaF3-DDP)LB膜摩擦学行为,并利用原子力显微镜(AFM)对其形貌进行了观察。试验方法基体选用玻璃,拉膜槽为法国L-B150型Langmuir槽。其纳米微粒为二烷基二硫代磷酸(DDP)修饰的La…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.