新型半导体纳米材料的主要制备技术

简要论述了半导体纳米材料的发展历史及其特点,着重讨论了当前国内外主要的几种半导体纳米材料的制备工艺技术,包括溶胶-凝胶法、微乳液法、模板法、基于MBE和MOCVD的纳米材料制备法、激光烧蚀法和应变自组装法等,并分析了以上几种纳米材料制备技术的优缺点及其应用前景.     

表面活性剂在纳米材料合成中的应用

阐述了表面活性剂分散机制及在纳米材料制备中的分散作用,介绍了以表面活性剂为基础的各种纳米材料制备方法的机理:如以表面活性剂形成的各种有序聚集体为模板的模板法、用表面活性剂稳定形成的微乳液为介质的微乳法、水热法、溶胶-凝胶法等。重点总结了表面活性剂在不同方法制备纳米材料中的最新性、前沿性的研究成果,并展望了表面活性剂在该领域中的应用前景。     

尖晶石型软磁铁氧体纳米材料的制备研究进展

介绍了软磁铁氧体纳米材料的特性,综述了近年来具有尖晶石结构的软磁铁氧体纳米材料的制备方法。其中包括:化学共沉淀法,水热法,溶胶-凝胶法,喷雾热解法,微乳液法,相转化法,超临界法,冲击波合成法,微波场下湿法合成,爆炸法,高能球磨法,自蔓延高温合成法等。详细介绍了各种制备方法的特点,研究进展及其发展趋势。     

一维ZnSe半导体纳米材料的制备与特性

在三种新溶剂三乙胺、二乙胺、三乙醇胺中,以KBH4为还原剂,由改进的溶剂热方法于170℃制备了ZnSe纳米材料,XRD、TEM研究表明最终产物为一维ZnSe半导体纳米晶材料,室温产物为球形ZnSe纳米材料.初步研究了一维ZnSe纳米材料的光学吸收和热稳定性.结果表明,不同条件(溶剂,温度)下ZnSe具有不同的形貌;ZnSe在常温下具有一定稳定性,400℃以上时在空气中可转化为ZnO纳米材料;并用过渡态配合物的概念解释了实验现象.     

一维ZnSe半导体纳米材料的制备与特性

在三种新溶剂三乙胺、二乙胺、三乙醇胺中 ,以 KBH4 为还原剂 ,由改进的溶剂热方法于 170℃制备了 Zn Se纳米材料 ,XRD、TEM研究表明最终产物为一维 Zn Se半导体纳米晶材料 ,室温产物为球形 Zn Se纳米材料 .初步研究了一维 Zn Se纳米材料的光学吸收和热稳定性 .结果表明 ,不同条件 (溶剂 ,温度 )下 Zn Se具有不同的形貌 ;Zn Se在常温下具有一定稳定性 ,4 0 0℃以上时在空气中可转化为 Zn O纳米材料 ;并用过渡态配合物的概念解释了实验现象 .     

空心微球结构材料的制备及应用

综述了国内外空心微球结构材料的制备方法,包括自组装法、模板-界面聚合法、喷雾反应法、乳液法等。对空心微球结构材料在不同领域中的最新研究进展做了评述。     

超声化学法合成金属硫族半导体纳米材料

随着纳米科技的发展,合成纳米材料的新方法层出不穷。超声化学方法合成纳米材料近年来得到了飞速的发展,引起了科学界越来越多的关注。本文从超声化学的基本原理和特点出发,简要介绍了近年来超声化学法在水、有机溶剂及微乳液中合成金属硫族半导体纳米材料和复合金属纳米材料的进展。在水溶液中超声化学制备金属硫族半导体纳米材料方便、简单,而在有机溶剂和微乳液中制备,能更好地控制粒子的尺寸和形貌。     

溶胶-自蔓延燃烧法制备纳米材料的研究进展 推荐 下载阅读CAJ格式全文 下载阅读PDF格式全文

溶胶-自蔓延法具有溶胶-凝胶法和自蔓延法制备纳米材料的操作简单易行、无需煅烧、所得产物粒径小、分布比较均匀等优点.以硝酸盐-柠檬酸体系为例,综述了溶胶-自蔓延燃烧法的产生和发展,以及在制备一些简单纳米氧化物、以及燃料电池材料、铁氧体材料、超导粉体材料、介电陶瓷粉体材料和热敏陶瓷材料等几个方面的实际应用.最后展望了这一领域的应用和发展前景.     

纳米软磁铁氧体材料液相合成技术

随着电子产品向小型化、轻量化和高性能化方向发展以及应用领域的不断拓展,作为一新材料,纳米软磁铁氧体粉体的制备技术成为国际研究的热点之一。介绍了纳米软磁性铁氧体料的液相合成技术,综述了近年来具有尖晶石结构的纳米软磁性铁氧体材料的液相制备方法。中包括:化学共沉淀法、水热法、溶胶-凝胶法、喷雾热解法、微乳液法、相转化法、超临界法冲击波合成法和微波场下湿法合成。并对纳米软磁铁氧体材料液相合成技术的发展予以展望。     

纳米La_2O_3及其复合氧化物的制备方法研究进展

根据制备过程中反应所处的体系不同,将纳米La2O3及其复合氧化物制备方法分为固相法、液相法和气相法。综述了近年来国内外纳米La2O3及其复合氧化物制备方法的原理和研究进展,并详细分析和比较了低温固相反应法、熔盐合成法、沉淀法、溶胶-凝胶法、水热法、微乳液法、低温燃烧合成法和超声化学法等重要制备方法的优缺点。此外,还展望了制备纳米La2O3及其复合氧化物的发展趋势,指出不断改进和优化传统方法、发展新制备方法、结合新型理论和计算机模拟软件技术等进行设计和优化来制备形貌可控的纳米材料,开发环境友好、可规模化生产的方法是未来研究的主要发展方向。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.