一维ZnSe半导体纳米材料的制备与特性

在三种新溶剂三乙胺、二乙胺、三乙醇胺中,以KBH4为还原剂,由改进的溶剂热方法于170℃制备了ZnSe纳米材料,XRD、TEM研究表明最终产物为一维ZnSe半导体纳米晶材料,室温产物为球形ZnSe纳米材料.初步研究了一维ZnSe纳米材料的光学吸收和热稳定性.结果表明,不同条件(溶剂,温度)下ZnSe具有不同的形貌;ZnSe在常温下具有一定稳定性,400℃以上时在空气中可转化为ZnO纳米材料;并用过渡态配合物的概念解释了实验现象.     

分子束外延ZnSe/ZnS_xSe_(1-x)超晶格光学特性

用分子束外延方法在 Ga As(10 0 )衬底上生长了高质量的 Zn Se/ Zn Sx Se1 - x(x=0 .12 )超晶格结构 ,通过 X射线衍射谱和光致发光谱 ,对其结构特性和光学特性进行了研究 .结果表明 :在 4 .4 K温度下 ,超晶格样品显示较强的蓝光发射 ,主发光峰对应于阱层 Zn Se的基态电子到重空穴基态的自由激子跃迁 ,而且其峰位相对于 Zn Se薄膜的自由激子峰有明显蓝移 .从理论上分析计算了由应变和量子限制效应引起的自由激子峰位移动 ,理论和实验结果相吻合     

退火处理对ZnO薄膜结晶性能的影响

研究了退火处理对Zn O薄膜结晶性能的影响.Zn O薄膜由直流反应磁控溅射技术制得,并在O2 气氛中不同温度(2 0 0～10 0 0℃)下退火,利用X射线衍射(XRD)、原子力显微镜(AFM)和X射线光电子能谱(XPS)对其结晶性能进行了研究,提出了一个较为完善的Zn O薄膜退火模型.研究表明:热处理可使c轴生长的薄膜取向性增强;随退火温度的升高,薄膜沿c轴的张应力减小,压应力增加;同时晶粒度增大,表面粗糙度也随之增加.在6 4 0℃的应力松弛温度(SRT)下,Zn O薄膜具有很好的c轴取向,沿c轴的应力处于松弛状态,晶粒度不大,表面粗糙度较小,此时Zn O薄膜的结晶性能最优.     

ZnMgSe/ZnCdSe多量子阱的光学性质

通过光致发光 (PL)和拉曼 (Raman)光谱研究了分子束外延 (MBE)生长的 Zn Mg Se/ Zn Cd Se多量子阱的光学性质。在 80 K到 3 0 0 K温度范围内 ,观测到了 PL光谱中来自量子阱的自由激子发光 ,通过发光强度与温度的变化关系 ,计算了激子束缚能。结果表明在 Zn Mg Se/ Zn Cd Se多量子阱 (MQWs)势垒层中 ,Mg的引进增强了量子阱的限制效应 ,导致激子具有较好的二维特性。在室温下的 Raman光谱中观测到了多级纵光学声子(LO)和横光学声子 (TO)的限制模 ,表明多层结构具有较高的质量     

激光烧蚀法制备准一维纳米材料

介绍了当前激光烧蚀法制备纳米丝、纳米管和纳米电缆的研究现状,讨论了准一维纳米材料激光烧蚀法制备的系统设备和制备条件,分析了激光烧蚀法制备准一维纳米材料的特点和发展趋势.认为准一维纳米材料是气相粒子在高温催化剂作用下生成的.激光烧蚀法具有洁净、可控性强及适应面广的特点.     

一维纳米材料定向排布技术的研究进展

定向排列技术是一维纳米材料应用中的一项关键技术。论述了LB(Langmuir-Blodgett)膜法、介电泳法、接触印刷法和水流法几类定向排列方法及其特点。LB膜法利用材料的两亲特性,将一维纳米材料铺展在水面,压缩水面成膜区域,使材料取向排列;介电泳法借助材料在交变电场中的极化现象,使一维纳米材料沿着电极之间的电场线方向定向排列;接触印刷法利用材料和衬底表面的范德华力使一维纳米材料脱离施主衬底,定向排列到受主衬底上;水流法利用流体的冲刷作用或者液体的毛细效应,使一维纳米材料呈取向性排列。介绍了这些物理、化学和机械方法在一维纳米材料定向排布加工方面所具有的不同特色和适用条件。     

Fe~(2+):ZnSe实现中红外波段激光输出

<正>中波红外激光器在痕迹量气体检测、激发惰性气体产生软硬X射线辐射、激光定向干扰等方面具有重要应用价值。华北光电技术研究所采用硒化锌(Zn Se)晶片为基质材料,硒化亚铁(Fe Se)粉末为掺杂物,通过热扩散掺杂技术获得了尺寸Φ22 mm×4 mm、铁离子掺杂浓度3.43×1018cm-3的掺铁硒化锌(Fe2+:Zn Se)晶体样品。制备的Fe2+:Zn Se晶体在3.0μm附近处出现了明显的Fe2+离子特征吸收峰,吸收峰峰值处透射率为     

飞秒激光组装一维纳米材料及其应用

一维纳米材料具有众多优异的特性,是构建微纳米功能性器件的基石。实现一维纳米材料在二维和三维空间的高精度和高定向组装是充分发挥其应用潜力的关键,同时也是制造难点。在众多纳米材料组装技术中,飞秒激光直写诱导组装技术具有独特优势,可实现一维纳米材料在任意三维结构中的可设计、高定向及高精度的组装。首先简要介绍了一维纳米材料组装研究的背景,并总结了非激光直写组装技术的研究现状和存在的挑战,然后较详细介绍了飞秒激光直写技术在一维纳米材料组装研究中的进展,重点回顾了金属(包括Au和Ag纳米线)、半导体(包括CNTs和ZnO)一维纳米材料的飞秒激光直写组装及微纳光电子功能器件的制造。并讨论了诱导一维纳米材料定向排布的光学力和非光学力(包括剪切力、体积收缩应力和空间限制)的作用机理,理论计算和实验研究结果验证了飞秒激光诱导的非光学力作用是导致一维纳米材料定向排布的主要原因。最后探讨了目前飞秒激光组装技术面临的一些问题和未来在高精度纳米材料组装和三维功能器件集成方面的发展趋势。     

一维铌酸钠纳米杆的合成及光催化性能

以Nb2O5、NaOH为起始物,NaOH为矿化剂,通过传统水热法并结合后期热处理,成功制备了高结晶度、生长完善的一维正交相NaNbO3纳米结构。采用TG-DSC、XRD和SEM对不同阶段产物的组成、结晶结构、形貌进行了表征。将所制备的Na2Nb2O6·1.4H2O前驱样品在不同温度下热处理,当温度高于400℃时可以转变为一维的正交相NaNbO3纳米杆。随着热处理温度的升高,产物的结晶性保持良好,但其形貌开始发生扭曲甚至出现裂纹。另外,对不同后处理的样品进行光催化产氢测试,结果表明随着热处理温度的增大,一维铌酸钠纳米材料的光催化活性先增大后降低,当后热处理温度为400℃时,平均的产氢率可达104.5μmol·h–1。     

无机络合溶胶-凝胶法制备多孔ZnO薄膜

利用无机络合溶胶-凝胶法制备多孔Zn O薄膜,同时利用多种测试手段对薄膜的晶体结构、表面形貌、多孔和光学性能进行了研究.XRD和SEM的测试结果表明,Zn O薄膜的晶体结构为六方纤锌矿,薄膜表面呈多孔状.由孔径分布曲线得出薄膜的孔主要集中在介孔2 .0 2 nm和4 .97nm ;5 0 0℃煅烧得到的Zn O薄膜的比表面积是2 7.5 7m2 /g;在不同温度下煅烧的薄膜在可见光区域透射率均高于85 % ,光学带宽为3.2 5 e V.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.