基于片上工艺的MOEMS光强差分测量加速度计研究

论证了一种基于SOI片上工艺的,通过光强差分测量加速度的微光机电系统（MOEMS）加速度计。器件主要结构为较大悬浮质量块对称两端加工出两面V型反射镜。系统整个微机械结构在细直弹性梁支撑下,因受惯性力作用V型镜发生位移改变,从而将引入系统中的光信号进行差分反射。最后,通过外部光电探测器测量出各通路光纤的光强信号来测算加速度值。片上微加工所得的器件经实验测量得到了：7.77×10-2 μm的结构灵敏度,1.38 kHz谐振频率,3.73 mV/g器件灵敏度和0.987的线性度。     

干涉型集成光学加速度计信号处理及SOPC设计

介绍了集成光学芯片、光纤质量块简谐振子和可编程片上系统(SOPC)混合集成光学加速度计的设计方法。采用迈克尔逊干涉方法实现加速度信号光相位调制,综合交流相位跟踪零差补偿技术(PTAC)和合成外差信号解调技术(SHSD)补偿误差并解调出加速度信号,应用SOPC技术设计和实现数字信号处理(DSP)系统,同时实现DSP和智能化数据传输接口并行工作,使系统实时、线性地跟踪到加速度信号。系统设计灵敏度达4.8902V/g。实际测量灵敏度达4.62V/g,工作频带10~1066Hz。     

基于单质量块微纳光栅泰伯效应的双轴MOEMS加速度计

对一种基于单质量块微纳光栅泰伯效应双轴微光机电系统(MOEMS)加速度计进行了设计、加工与测试。利用有限元分析和时域有限差分法分别对双轴加速度计的敏感结构和光栅参数进行仿真优化。在保证加速度计高集成度的同时,为了实现双轴加速度的高精度测量,采用不同周期的两组光栅进行双轴加速度检测,通过磁控溅射工艺将两组光栅结构沉积在质量块的不同区域,最终通过阳极键合方式实现该双轴MOEMS加速度计的制备。实验结果表明,光栅泰伯效应双轴MOEMS加速度计x轴与y轴的灵敏度分别为3.36和3.54 V/g,零偏稳定性分别为25.53和20.91μg@1 s。该研究为实现高精度多轴加速度计提供了一种新的方法。     

基于光纤检测技术的扭转敏感微机电系统加速度传感器

为实现微型化、抗电磁干扰、可长时间工作和可远距离传输的加速度传感器,提出了一种基于微机电系统(MEMS)非对称扭镜结构的光纤加速度计设计方案,并利用对角度变化非常敏感的双光纤准直器对扭镜的扭转角度变化进行检测。MEMS光纤加速度计由MEMS非对称扭镜结构、驱动电极和双光纤准直器等组成。分析了器件的加速度敏感原理和光纤检测原理,介绍了器件综合设计考虑,并给出了器件的结构参数。利用MEMS加工技术成功制作了MEMS光纤加速度计样品。对加速度计进行了实验测试,加速度计的输出实验值与理论值吻合。测试结果表明,该加速度计量程为±2g,带宽为600 Hz,分辨率优于10-4 g,且具有良好的线性度和重复性。该MEMS光纤加速度计将MEMS敏感结构与光纤检测相结合,兼备了两者的优点,结构紧凑、制作工艺简单。     

三分量全保偏光纤加速度传感器的研究

报道了三分量全保偏光纤加速度传感器的实验研究结果。传感器由6个弹性柱体共同支撑1个质量块构成三分量结构,由3个迈克尔逊全保偏光纤干涉仪共用一个光源组成。光学部分采用全保偏光纤干涉仪结构,消除了干涉光束偏振态随机变化引起的信号衰落,采用光频调制相位载波解调信号处理技术,消除了相位随机漂移引起的信号衰落,从而实现了对加速度信号的稳定检测。传感器的工作频带为5~500 Hz,加速度灵敏度达到660 rad/g,系统最小可测相位差为10-5rad,最小可测加速度达1.5×10-7m/s2,工作频带内加速度灵敏度变化小于2 dB。三轴加速度灵敏度和频率响应曲线与理论分析的结果基本一致。     

新型簧片式光纤加速度传感器研究

研制了一种新型光纤加速度传感器。基于迈克尔逊干涉仪原理,采用了质量块和可 弯曲簧片结构,通过使用竖直 绕制传感光纤和横向绕制参考光纤的方式提高了加速度传感器的加速度灵敏度。实验测试了 其加速度灵敏度以及横向串扰。在簧片厚为1mm、质量块质量为208 g时,其加速度灵敏度 可达556rad/g(g为重力加速度);在噪声本底为10－4 rad/Hz 、加速度传感器工作频率为100Hz时,其可探测的最小加速度信号为 200ng/Hz(g为重力加速度)。采用该全金属结 构,传感器可更好地用于微弱信号检测。     

基于有限元方法的光纤加速度计灵敏度仿真分析

阐述了光纤加速度计的工作原理,利用有限元方法得到光纤加速度计两弹性柱体外半径上节点的径向形变△R,并通过公式计算得出加速度灵敏度值39.69 dB(0 dB=1 rad/g),最后依据仿真得到的结构材料参数,研制了光纤加速度计,并测得其加速度灵敏度为39.43 dB,与仿真结果相差0.26 dB,实验数据与仿真结果相吻合.研究结果表明,利用有限元方法对光纤加速度计加速度灵敏度性能进行仿真具有一定可行性,该研究对芯轴式推挽型光纤加速度计的结构设计和广泛应用具有重要的理论指导意义.     

CMOS磁敏/光敏兼容传感器集成电路的设计

研制了一种新型的磁敏传感器和光敏象限传感器兼容的集成电路。该传感器采用0.6μm标准CMOS工艺制造,设计并实现了磁敏传感器、光敏象限传感器及其兼容的信号处理电路的单片集成,并采用有源预处理电路和相关二次采样电路进行磁敏和光敏信号的采集和降噪处理,具有较高的磁场灵敏度(0.0361T-1)感光灵敏度(2V/lx.s),实现了在一个芯片上同时传感磁信号和光信号的功能。     

MOS环振式数字加速度传感器

提出了一种新的环振式数字加速度传感器,它采用做在硅梁上的MOS环形振荡器作为敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、灵敏度高、温度系数低以及制作工艺简单等特点.分析了环形振荡器的频率特性,以及环形振荡器的谐振频率和加速度的关系,分析并设计了加速度传感器的环形振荡器电路、混频器电路、物理结构以及制作工艺,并制作了样品,其灵敏度为6 .91k Hz/g.     

MOS环振式数字加速度传感器

提出了一种新的环振式数字加速度传感器,它采用做在硅梁上的MOS环形振荡器作为敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、灵敏度高、温度系数低以及制作工艺简单等特点.分析了环形振荡器的频率特性,以及环形振荡器的谐振频率和加速度的关系,分析并设计了加速度传感器的环形振荡器电路、混频器电路、物理结构以及制作工艺,并制作了样品,其灵敏度为6.91kHz/g.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.