基LCoS技术的微型显示器

介绍了一款我国自主开发研制的分辨率为800×600(SVGA)、以单晶硅为基底的微型液晶显示器一LCoS,其中展示了LCoS微显示器系统电路结构、显示芯片物理结构、微显光机放大原理以及相关实物照片.     

硅基液晶显示器研究进展

硅基液晶（Liquid Crystal on Silicon)显示器是一种反射式液晶显示器，其周边驱动器和有源像素矩阵使用CMOS技术制作在单晶硅上，并以该晶片为基底封装液晶盒，因而拥有小尺寸和高显示分辨率的双重特性。详细讨论了LCoS显示器的结构和用途，展示了LCoS显示芯片的实际设计结果及其设计方法。     

投影显示用LCoS显示芯片设计

首先确定了三片式投影用硅基液晶(LCoS)显示器应具备的显示性能参数,进一步提出LCoS显示芯片器件物理结构及其电路组成框图。从芯片整体角度介绍了设计方法,详述了运用CadenceEDA工具设计LCoS显示芯片的具体策略和相应步骤,给出了LCoS显示芯片的实际设计版图。     

LCoS显示芯片设计与应用

LCoS显示芯片是一种反射式液晶显示器，其周边驱动器和有源象素矩阵使用CMOS技术制作在单晶硅衬底上，并以该晶片为基底封装液晶盒，因而拥有了小尺寸和高显示分辨率的双重特性。本文详细讨论了LCoS显示芯片的结构和用途，展示了LCoS显示芯片的设计方法及其实际设计结果。     

天赐良机——LCoS与中国平板显示产业

LCoS是一种反射式微型有源矩阵液晶显示器,其有源矩阵使用CMOS技术制作在单晶硅衬底上,因而拥有了小尺寸和高显示分辨率的双重特性。本文介绍了LCoS显示器的结构和用途,展示了LCoS显示芯片的设计方法及其实际设计结果,最后综述LCoS的未来市场和现在的生产状况。     

LCoS微型显示器设计与制造的特殊性分析

LCoS显示技术是近几年特别受业界关注的新型显示技术之一,由于其具有高分辨率、高像素密度和低成本等特点,在微型显示器和投影显示器方面具有巨大的市场潜力。从LCoS硅背板设计、制造工艺和液晶盒组装等方面,阐述了LCoS显示关键技术的特殊性及发展趋势。     

彩色LCoS显示器设计分析(三)

本文首先讨论快速响应液晶的主要物理性能，并从已有的产品中，为所设计的彩色LCoS显示器选择一种适合的液晶材科。然后，从显示角度，引用成功的数据，分析显示芯片上作为反射镜面的象素电极的光学性能。最后简述LCoS显示器的优势与应用。     

新型近眼显示系统的分析与设计

显示技术是信息技术中的一个重要领域,在百舸争流的现代显示技术中,以多晶硅薄膜晶体管、硅基液晶和有机发光二极管等为代表的微显示技术近年来发展迅速,成了众多研究人员和投资者所注目的热点。本文对基于LCoS微显示器的近眼显示系统进行了较为详细的分析,并介绍了系统电路和简单放大光学系统的设计方法。．     

适用于背投高清晰度电视的卷进式彩色LCoS

我们就单片式硅上液晶(Liquid Crystal on Silicon,简作LCoS)的改进提出报告.该系统基于菲力浦卷进式彩色(Scolling color)体系结构,性能和成本优势使其用于高清晰度电视(HDTV)十分理想.我们将讨论一个显示1280 × 720象素的64in背投显示器的情况.     

安桥于9月10～11日在北京举行Integra Research新产品演示会

Brillian公司(纳斯达克:BRLC)和私有公司SyntaxGroups Corporation宣布两家公司已进入最终的合并协议流程。此宗合并将可提供卓越的HDTV技术组合、领先的TFT液晶显示器(TFT—LCD)、硅基液晶(LCoS)产品系列、成熟的销售渠道以及全球性的供应链架构。 Brillian是第二代硅基液晶(Gen II LCoS)技术和超高质720p与1080p规格Gen II LCoS高清电视及     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.