UHF RFID系统中并行CRC电路的设计

针对UHF RFID系统中的并行循环冗余校验电路进行了设计和详细的分析。首先对基于经典的线性反馈移位寄存器的串行CRC电路进行了介绍,然后在串行CRC电路的基础上采用迭代法推导出了8位并行CRC电路。UHF RFID系统中采用了CRC-16的校验方法,因此该文着重以CRC-16为例,用Verilog HDL硬件描述语言设计实现了8位并行CRC-16电路,利用ALTERA公司的仿真工具Modelsim对其进行了功能仿真,最后在Quartus II 11.0开发环境下烧录到FPGA芯片上进行了板级验证。结果符合设计的初衷:一次处理1个字节的数据,且满足UHF系统通信速率的要求。     

Metal-to-metal antifuse with low programming voltage and low on-state resistance

This paper describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the Al-HfO₂-Al antifuse. The programming voltage of the antifuse with 120 Å HfO₂ is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance (~19 Ω) and low programming voltage (4.6 V) is demonstrated in the embedded Ti antifuse with 120 Å HfO₂ while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.     

基于多尺度特征多对抗网络的雾天图像识别

目的 当前的大型数据集,例如ImageNet,以及一些主流的网络模型,如ResNet等能直接高效地应用于正常场景的分类,但在雾天场景下则会出现较大的精度损失。雾天场景复杂多样,大量标注雾天数据成本过高,在现有条件下,高效地利用大量已有场景的标注数据和网络模型完成雾天场景下的分类识别任务至关重要。方法 本文使用了一种低成本的数据增强方法,有效减小图像在像素域上的差异。基于特征多样性和特征对抗的思想,提出多尺度特征多对抗网络,通过提取数据的多尺度特征,增强特征在特征域分布的代表性,利用对抗机制,在多个特征上减少特征域上的分布差异。通过缩小像素域和特征域分布差异,进一步减小领域偏移,提升雾天场景的分类识别精度。结果 在真实的多样性雾天场景数据上,通过消融实验,使用像素域数据增强方法后,带有标签的清晰图像数据在风格上更趋向于带雾图像,总的分类精度提升了8.2%,相比其他的数据增强方法,至少提升了6.3%,同时在特征域上使用多尺度特征多对抗网络,相比其他的网络,准确率至少提升了8.0%。结论 像素域数据增强以及多尺度特征多对抗网络结合的雾天图像识别方法,综合考虑了像素域和特征域的领域分布差异,结合了多尺度的丰富特征信息,同时使用多对抗来缩小雾天数据的领域偏移,在真实多样性雾天数据集上获得了更好的图像分类识别效果。     

可垂直集成的无电容式动态存储器件

A two-port capacitorless PNPN device with high density,high speed and low power memory fabricated using standard CMOS technology is presented.Experiments and calibrated simulations were conducted which prove that this new memory cell has a high operation speed(ns level),large read current margin(read current ratio of 10~4×),low process variation,good thermal reliability and available retention time(190 ms).Furthermore,the new memory cell is free of the cyclic endurance/reliability problems induced by hot-carrier injection due to the gateless structure.     

基于PVDF压电传感器的车辆动态称重信号的研究

聚偏二氟乙烯(PVDF)是一种高性能压电材料,非常适合应用于车辆动态称重的环境。针对PVDF传感器的特点,提出用阻尼振动模型分析PVDF传感器产生称重信号的过程,给出称重信号的频谱特点,并在自主设计的实验平台基础上对该信号进行测量。实验结果显示:相对于低频噪声,称重信号主要分布在高频段,该特点为滤除系统噪声提供了依据。根据该特点设计称重系统可以有效地减少算法设计的复杂度,提高系统的测量精确性。     

基于反熔丝结构的低成本嵌入式一次可编程4-kbit 存储器宏

A 4-kbit low-cost one-time programmable （OTP） memory macro for embedded applications is designed and implemented in a 0.18-μm standard CMOS process. The area of the proposed 1.5 transistor （1.5T） OTP cell is 2.13 μm2, which is a 49.3% size reduction compared to the previously reported cells. The 1.5T cell is fabricated and measured and shows a large programming window without any disturbance. A novel high voltage switch （HVSW） circuit is also proposed to make sure the OTP macro, implemented in a standard CMOS process, works reliably with the high program voltage. The OTP macro is embedded in negative radio frequency identification （RFID） tags. The full chip size, including the analog front-end, digital controller and the 4-kbit OTP macro, is 600 × 600 μm2. The 4-kbit OTP macro only consumes 200 × 260 μm^2. The measurement shows a 100% program yield by adjusting the program time and has obvious advantages in the core area and power consumption compared to the reported 3T and 2T OTP cores.     

一种新型的自对准源漏接触技术

提出了一种用于亚微米尺寸以下MOSFET器件的自对准源漏接触技术。这种新型的集成方法改变了传统的工艺步骤,即光刻接触孔,然后向里填充导电材料。在形成栅极、绝缘介质侧墙以及自对准金属硅化物以后,通过沉积金属膜层,并各向异性刻蚀以在绝缘介质侧墙两旁形成一对金属的侧墙结构。这个侧墙连接底部的源漏区和上部的互联区,作为底层的金属接触引出。这个方法不仅减小了刻蚀接触孔的难度,且采用自对准的方法形成金属接触也减小了源漏接触的距离,提高了集成度。这项工艺集成技术尝试应用于0.5μm栅长MOSFET器件结构中,并仿真得到了良好的电学性能。