| 可垂直集成的无电容式动态存储器件 |
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| 引用本文： | 童小东,吴昊,赵利川,王明,钟汇才.可垂直集成的无电容式动态存储器件[J].半导体学报,2013,34(8):084005-5. |
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| 作者姓名： | 童小东 吴昊 赵利川 王明 钟汇才 |
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| 作者单位： | Institute of Microelectronics,Chinese Academy of Sciences |
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| 摘 要： | A two-port capacitorless PNPN device with high density,high speed and low power memory fabricated using standard CMOS technology is presented.Experiments and calibrated simulations were conducted which prove that this new memory cell has a high operation speed(ns level),large read current margin(read current ratio of 10~4×),low process variation,good thermal reliability and available retention time(190 ms).Furthermore,the new memory cell is free of the cyclic endurance/reliability problems induced by hot-carrier injection due to the gateless structure.
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| 关 键 词： | PNPN diode two-port cross-point |
A vertically integrated capacitorless memory cell |
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| Tong Xiaodong,Wu Hao,Zhao Lichuan,Wang Ming and Zhong Huicai.A vertically integrated capacitorless memory cell[J].Chinese Journal of Semiconductors,2013,34(8):084005-5. |
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| Authors: | Tong Xiaodong Wu Hao Zhao Lichuan Wang Ming and Zhong Huicai |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | A two-port capacitorless PNPN device with high density, high speed and low power memory fabricated using standard CMOS technology is presented. Experiments and calibrated simulations were conducted which prove that this new memory cell has a high operation speed (ns level), large read current margin (read current ratio of 104×), low process variation, good thermal reliability and available retention time (190 ms). Furthermore, the new memory cell is free of the cyclic endurance/reliability problems induced by hot-carrier injection due to the gateless structure. |
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| Keywords: | PNPN diode two-port cross-point |
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