排序方式: 共有68条查询结果,搜索用时 15 毫秒
2.
3.
对X65M管线钢在不同调质处理工艺下的组织性能进行了研究。结果表明,在900℃淬火,660~670℃回火条件下,达到最佳性能匹配,X65M管线钢具有良好的综合性能,可获得低的屈强比(0.85)。 相似文献
4.
在日常生活中,人们最经常购买的就是食品,食品中含有很多营养元素和重金属,如果人们经常食用过量的重金属,轻则损害身体健康,重则会引起中毒。所以,相关食品安全部门应高度重视食品中重金属的检测问题,并建立健全的食品重金属检测与管理制度,进而保证食品能够达到安全标准,为人们的生命安全提供重要保障。 相似文献
5.
直流侧电压控制是有源电力滤波器(active power filter,APF)的关键技术之一,直接关系到APF的稳定运行、补偿效果和功率损耗。为了保证APF的运行和补偿效果,并有效地减小由直流侧电压产生的功率损耗,本文从无功功率传递的角度,提出一种优化的直流侧最小电压控制策略。该策略可以根据负载无功功率变化的情况,实时计算出最小直流侧电压值,在保证APF补偿效果的前提下有效地减小系统功率损耗。通过软件仿真和样机实验,验证了所提出策略的可行性和优越性。 相似文献
6.
使用3种可聚合乳化剂制备了水基胶粘剂用丙烯酸酯乳液。考查了可聚合乳化剂与单体间的共聚性能,比较了各乳化剂用量对丙烯酸酯乳液的固含量和单体转化率、乳液稳定性(聚合稳定性、贮存稳定性、冻融稳定性)以及乳胶膜的耐水性等性能的影响。结果表明,乳化剂1-烯丙氧基-3-(4-壬基苯氧基)-2-丙醇聚氧乙烯(10)醚(ANPEO10)、烯丙氧基壬基酚聚氧乙烯(10)醚双磷酸(ANPEO10-P2)和烯丙氧基壬基酚聚氧乙烯(10)醚硫酸铵(DNS-86)均成功地聚合到丙烯酸酯聚合物中。用3种乳化剂制备的乳液性能各有特点。使用DNS-86以及ANPEO10-P2制得的乳液的贮存稳定性好;用ANPEO10制得乳液的冻融稳定性最好;使用DNS-86制得的乳胶膜的耐水性最好。3种乳化剂用量均为2.0%时,制得的乳液综合性能最好。 相似文献
7.
A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μm.Under Vds=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 GHz.The output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds=10 V. 相似文献
8.
An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented. 相似文献
9.
10.