A review of hashing based image authentication techniques

Multimedia Tools and Applications - In the recent digitization era, image hashing is a key technology, including image recognition, authentication and manipulation detection, among many multimedia...     

Integrated VCO With Up/Down Converter for Si-Based 60 GHz WPAN Applications

This letter presents the design and implementation of the largest reported bandwidth of a 60 GHz up/down converter with an integrated voltage controlled oscillator (VCO) in a low-cost 0.18 mum silicon-germanium process. The up/down conversion is achieved using the 2X sub-harmonic passive mixing with anti-parallel diode pairs. A 30 GHz cross-coupled VCO is designed, optimized and integrated with the sub-harmonic mixer through a cascode amplifier to meet the local oscillator power requirements. The fully integrated chip takes only 1.5 mm² of silicon die area and consumes only 40 mW of dc power for a measured conversion loss of 12 dB at 61.5 GHz. The integrated up/down converter is measured to have greater than 9 GHz double-sided 3-dB RF bandwidth suitable for wideband high data-rate WPAN transceiver requirements. The VCO and VCO-amplifier test structures are separately fabricated and measured to have a phase noise as low as -105 dBc/Hz at 1 MHz offset with a tuning range of 2.3 GHz.     

Design rule development for microwave flip-chip applications

This paper presents a novel experimental approach for the analysis of factors to be considered when designing a flip-chip package. It includes the design of an experiment and statistical analysis of the outputs and uses both test-structure measurements and full-wave simulation techniques in the 1-35-GHz frequency range. The most significant factors are found to be, from the most to least important, the length of the area where the device and substrate overlap (referred to as conductor overlap), the bump diameter, and the width of the coplanar-waveguide transmission-line launch. These results are valid for conductor overlaps between 300-500 μm. For a lower value (120 μm), the significance level of the overlap decreases and the bump height also becomes significant. Test-structure measurements in the 120-200-μm overlap range validate this result and demonstrate the decrease in the significance level. The substrate thickness in the 10-25-mil interval is found to be statistically insignificant, therefore, it can be eliminated from further analysis. This approach provides a foundation for development of a set of design rules for RF and microwave flip-chip similar to RF integrated-circuit design rules     

Cryogenic temperature performance of modulation-doped field-effect transistors

Reports S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3 dB higher than at 300 K, and the current gain cutoff frequency f/sub T/ increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher f/sub T/ by direct measurement.<>     

Gate-controlled negative differential resistance in drain currentcharacteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs

The observation of negative differential resistance (NDR) and negative transconductance at high drain and gate fields in depletion-mode AlGaAs/InGaAs/GaAs MODFETs with gate lengths L _g ~0.25 μm is discussed. It is shown that under high bias voltage conditions, V_ds>2.5 V and V_gs>0 V, the device drain current characteristic switches from a high current state to a low current state, resulting in reflection gain in the drain circuit of the MODFET. The decrease in the drain current of the device corresponds to a sudden increase in the gate current. It is shown that the device can be operated in two regions: (1) standard MODFET operation for V_gs<0 V resulting in f_max values of >120 GHz, and (2) a NDR region which yields operation as a reflection gain amplifier for V_gs >0 V and V_ds>2.5 V, resulting in 2 dB of reflection gain at 26.5 GHz. The NDR is attributed to the redistribution of charge and voltage in the channel caused by electrons crossing the heterobarrier under high-field conditions. The NDR gain regime, which is controllable by gate and drain voltages, is a new operating mode for MODFETs under high bias conditions     

Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, F_T, increasing by 80% for gate length L_g = 1.73 μm and 15% for L_g = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.     

Low-loss LTCC cavity filters using system-on-package technology at 60 GHz

In this paper, three-dimensional (3-D) integrated cavity resonators and filters consisting of via walls are demonstrated as a system-on-package compact solution for RF front-end modules at 60 GHz using low-temperature cofired ceramic (LTCC) technology. Slot excitation with a /spl lambda/g/4 open stub has been applied and evaluated in terms of experimental performance and fabrication accuracy and simplicity. The strongly coupled cavity resonator provides an insertion loss <0.84 dB, a return loss >20.6 dB over the passband (/spl sim/0.89 GHz), and a 3-dB bandwidth of approximately 1.5% (/spl sim/0.89 GHz), as well as a simple fabrication of the feeding structure (since it does not require to drill vias to implement the feeding structure). The design has been utilized to develop a 3-D low-loss three-pole bandpass filter for 60-GHz wireless local area network narrow-band (/spl sim/1 GHz) applications. This is the first demonstration entirely authenticated by measurement data for 60-GHz 3-D LTCC cavity filters. This filter exhibits an insertion loss of 2.14 dB at the center frequency of 58.7 GHz, a rejection >16.4 dB over the passband, and a 3-dB bandwidth approximately 1.38% (/spl sim/0.9 GHz).     

A fully monolithic 260-/spl mu/W, 1-GHz subthreshold low noise amplifier

A micro-power complementary metal oxide semiconductor (CMOS) low-noise amplifier (LNA) is presented based on subthreshold MOS operation in the GHz range. The LNA is fabricated in an 0.18-/spl mu/m CMOS process and has a gain of 13.6 dB at 1 GHz while drawing 260 /spl mu/A from a 1-V supply. An unrestrained bias technique, that automatically increases bias currents at high input power levels, is used to raise the input P1dB to -0.2 dBm. The LNA has a measured noise figure of 4.6 dB and an IIP3 of 7.2 dBm.     

Development of a wide-band short backfire antenna excited by an unbalance-fed H-shaped slot

The short backfire antenna (SBA) has been widely used for mobile satellite communications, tracking, telemetry, and wireless local-area network applications due to its compact structure and excellent radiation characteristics. The most common excitation topology for the SBA is a balance-fed wire dipole, which has the disadvantage of a narrow frequency bandwidth for the input impedance. In this paper, an H-shaped slot is employed to excite the SBA for the first time. The H-shaped slot is unbalance-fed from a coaxial line. It is demonstrated that the H-shaped slot-excited SBA can achieve a bandwidth for input impedance of more than 20% (VSWR<2) while maintaining good radiation performance. The antenna structure is described and the simulation and experimental results are presented. The operating principle is investigated to explain why the slot-excited SBA can result in good impedance and radiation characteristics. A parametric study is conducted for the use of practical engineering design.     

Chitosan-based magnetic molecularly imprinted polymer: synthesis and application in selective recognition of tricyclazole from rice and water samples

A tricyclazole selective chitosan/Fe₃O₄ magnetic molecularly imprinted polymer (MMIP) was synthesized using non-covalent binding polymerization involving methacrylic acid (MAA) as functional monomer, divinylbenzene (DVB-80) as crosslinker, 2,2'-azobisisobutyronitrile as initiator, acetonitrile/toluene (75:25, v/v) as porogenic solvent and tricyclazole as template. Surface morphology and magnetic characterization of the prepared imprinted and non-imprinted polymers were done using scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectrometry and vibrating sample magnetometry, respectively. The adsorption kinetic data fitted best in pseudo-second-order model. The adsorption equilibrium was achieved in 30 min and the maximum binding capacity was 4579.9 µg/g. The Freundlich isotherm model was found suitable for explaining the binding isotherm data (R² > 0.99). Negative values of thermodynamic parameters ∆G (Gibb’s free energy), ∆H (enthalpy), and ∆S (entropy) revealed exothermic and spontaneous nature of adsorption processes. It also revealed decreased randomness at the solid–liquid interface during sorption. The scatchard plot analysis suggested heterogeneity of binding sites on MMIPs. The molecular recognition selectivity of MMIPs towards tricyclazole was much higher, as compared to its structural analogues, tebuconazole (α = 28.58) and hexaconazole (α = 37.16). The MMIPs were successfully applied to separate and enrich tricyclazole from fortified samples of rice and water, with a recovery percentage of 89.4% and 90.9%, respectively. These reusable imprinted polymers possessing high selectivity and specificity can be utilized as an adsorbent for solid-phase extraction in sample preparation for tricyclazole residue analysis in complex environmental matrices.