New Engineered Particles from Spray Dryers: Research Needs in Spray Drying

This article reviews developments in the simulations of spray dryer behavior, including the challenges in modeling the complex flow patterns inside the equipment, which are often highly transient and three-dimensional in nature. There appears to be considerable scope for using CFD simulations for investigating methods to reduce the rates of wall deposition and of thermal degradation for particles by modifying the air flow patterns in the chamber through small changes in the air inlet geometry. Challenges include building particle drying kinetics and reaction processes, as well as agglomeration behavior, into these simulations. The numerical simulations should be valuable supplements to pilot-scale testing, enabling more extensive and accurate optimization to be carried out than hitherto possible. New understanding of reaction processes and materials science, in combination with recent knowledge of the application of CFD to these problems, may enable new engineered powder products to be developed from the one-step spray-drying process.     

脉冲吹灰技术在丙烯腈装置余热锅炉的应用

通过对丙烯腈装置余热锅炉积灰情况的分析,采用脉冲吹灰技术,解决了丙烯腈行业余热锅炉积灰问题,实现了余热锅炉长周期运行,增加了蒸汽产量,提高了企业的经济效益。     

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.     

Investigation of structural properties of ITO thin films deposited on different substrates

The influence of the substrate nature on the structure and morphology of ITO thin films grown by thermal evaporation in vacuum is investigated. The as-prepared metal films with Sn/In molar ratio of 0.1 were subsequently annealed for 2 h at 723 K in air (to obtain tin doped indium oxide), then annealed in vacuum at 523 K, followed by UV irradiation (to reduce the electrical resistivity). Irrespective of substrate nature, XRD data evidence a (222) preferential orientation in films. Substrate nature, annealing in vacuum and UV irradiation influence the structure, morphology, optical, electrical and surface wetting properties of the films' surface.     

晶体硅薄膜电池制备技术及研究现状

晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。根据所采用的晶体硅薄膜沉积工艺中温度范围的不同，晶体硅薄膜电池研究可分为高温路线和低温路线两个不同发展方向。本文分别从这两个方向综述了目前国外晶体硅薄膜电池制备技术的最新进展，最新实验室研究结果。报导了晶体硅薄膜电池商业化进展状况，指出了晶体硅薄膜电池实现产业化必须解决的问题。     

单壁碳纳米管的制备及生长特性研究

采用Fe/MgO作为催化剂 ,催化裂解CH4制备了较纯的单壁碳纳米管 ,用TEM和Raman对碳纳米管进行了表征 ,对不同生长温度下制备的碳纳米管Raman径向呼吸振动峰 (RBM)进行了分析 ,研究了生长温度对单壁碳纳米管生长特性和结构特性的影响     

等离子体浸没离子注入和沉积技术制备TiN薄膜研究

利用多功能等离子体浸没离子注入设备 ,采用等离子体浸没离子注入和沉积技术在Ti合金表面制备具有优异力学性能的TiN薄膜。研究了真空室中氮气存在状态及氮气压力对薄膜性能的影响 :当氮以中性气体存在于真空室中 ,薄膜的生长主要受热力学因素控制 ,沿着低自由能的密排面 (低指数面 )TiN(1 1 1 )择优生长 ;当氮以等离子体状态存在于真空室中 ,薄膜沿着高指数面TiN(2 2 0 )择优生长 ,具有高硬度、耐磨性好的优点 ,并且随着N分压的提高 ,薄膜耐磨性提高     

钕电解阳极过电位的测定

用慢扫描示波法测定了钕电解的阳极过电位 .考察了温度、阳极电流密度、Nd2 O3添加量、电解质组成等因素对阳极过电位的影响 ,探讨了降低阳极过电位的可能途径 .结果表明 ,阳极过电位随阳极电流密度的增加而增大 ,随温度的升高而减小 ,一定范围内 ,阳极过电位与阳极电流密度的对数呈线性关系 ,满足塔菲尔方程 ;电解质中LiF和Nd2 O3浓度增加 ,阳极过电位降低 ;适当控制阳极电流密度、升高温度、增加电解质中LiF和Nd2 O3的浓度并尽可能减小极间距 ,均有利于降低阳极过电位     

掺硼非晶硅薄膜的微结构和电学性能研究

以硅烷(SiH4)和硼烷(B2H6)为气相反应先驱体，采用等离子体增强化学气相沉积法，(PECVD)制备出能应用于液晶光阀光导层的硼掺杂非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明，一定程度的硼掺杂提高了非晶氢硅薄膜的电导率、降低了非晶氢硅薄膜的光、暗电导比；硼掺杂促进薄膜晶态率的增加和硅晶粒尺寸的增大，薄膜的结晶状态将逐渐从非晶硅过渡到纳米硅，最后发展为多晶硅。红外吸收谱研究表明了大量的硼原子与硅、氢原子之间能形成某些形式的复合体，仅有少量硼元素对受主掺杂有贡献。     

The aligned Si nanowires growth using MW plasma enhanced CVD

New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.