| 掺硼非晶硅薄膜的微结构和电学性能研究 |
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| 引用本文： | 张溪文,韩高荣.掺硼非晶硅薄膜的微结构和电学性能研究[J].功能材料与器件学报,2003,9(2):150-154. |
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| 作者姓名： | 张溪文 韩高荣 |
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| 作者单位： | 浙江大学,硅材料科学国家重点实验室,杭州,310027 |
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| 基金项目： | 国家自然科学基金(No.60006003)，跨世纪优秀人才基金 |
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| 摘 要： | 以硅烷(SiH4)和硼烷(B2H6)为气相反应先驱体，采用等离子体增强化学气相沉积法，(PECVD)制备出能应用于液晶光阀光导层的硼掺杂非晶氢硅薄膜。X射线衍射、原子力显微镜和光、暗电导测试表明，一定程度的硼掺杂提高了非晶氢硅薄膜的电导率、降低了非晶氢硅薄膜的光、暗电导比；硼掺杂促进薄膜晶态率的增加和硅晶粒尺寸的增大，薄膜的结晶状态将逐渐从非晶硅过渡到纳米硅，最后发展为多晶硅。红外吸收谱研究表明了大量的硼原子与硅、氢原子之间能形成某些形式的复合体，仅有少量硼元素对受主掺杂有贡献。
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| 关 键 词： | 非晶硅薄膜 微结构 电学性能 硼 掺杂 等离子体增强化学气相沉积 |
| 文章编号： | 1007-4252(2003)02-0150-05 |
| 修稿时间： | 2002年8月2日 |
Investigation of microstructure and photoelectric properties of boron- doped amorphous silicon films |
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| ZHANG Xi-wen,HAN Gao-rong.Investigation of microstructure and photoelectric properties of boron- doped amorphous silicon films[J].Journal of Functional Materials and Devices,2003,9(2):150-154. |
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| Authors: | ZHANG Xi-wen HAN Gao-rong |
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| Abstract: | Boron-doped a-Si:H films are expected to be used as the photo-conductive layer in Liquid Crystal Light Valve. Using hydrogen-diluted SiH4 and B2H6 as the precursor gases, boron-doped a- Si:H films were obtained by the plasma-enhanced Chemical Vapor Deposition. According to the results from X-ray diffraction, Atom Force Microscopy, and photo/dark conductivity measurements,the doping of boron increases the room-temperature dark conductivity, decreases the photo/dark conductivity ratio and enhances the crystallization in amorphous silicon films. Results from FTIR measurement indicate that various kinds of complex might be formed among boron, silicon, and hydrogen atoms. Only a small amount of boron atoms devotes to the acceptor doping in boron-doped a-Si:H films. |
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| Keywords: | amorphous silicon film boron doping plasma enhanced chemical vapor deposition |
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