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Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively. 相似文献
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基于新型履带式全液压钻机的螺旋钻进试验研究 总被引:1,自引:0,他引:1
姚亚峰 《探矿工程(岩土钻掘工程)》2009,36(6):31-33
采用了新型履带式全液压钻机在阳泉煤业集团二矿进行的煤层螺旋钻进试验,试验表明使用该履带式钻机减少了钻孔的辅助时间,提高了钻孔效率.通过本次试验发挥了钻机及钻具的优势,并总结了螺旋钻进技术一些注意事项. 相似文献