波前分割无掩模激光干涉光刻的实现方法

激光干涉光刻不受传统光学光刻系统光源和数值孔径的限制,其极限尺寸CD达到曝光波长 的1/4,研究了波前分割双光束、三光束方法及四光束无掩模激光干涉光刻方法,提出了可用于五光束和多种多光束和多次曝光的梯形棱镜波前分割干涉光刻方法。用自行建立的梯形棱镜波前分割系统进行了多光束干涉曝光实验,得到孔尺寸约220nm的阵列图形。     

双光束双曝光与四光束单曝光干涉光刻方法的比较

双光束双曝光和四光束单曝光是无掩模激光干涉光刻的两种典型方法,都容易利用现有光刻工艺,在不需掩模和高精度光刻物镜的情况下,用简单廉价光学系统在大视场和深曝光场内形成孔阵、点阵或锥阵等周期性图形。双光束双曝光法得到的阵列图形周期极限为λ/2;四光束单曝光的周期略大,为前者的2倍。模拟和实验结果表明,通过控制曝光和显影工艺,双光束双曝光较四光束单曝光能更灵活地得到孔阵或点阵,而四光束单曝光得到的图形孔与孔之间没有鞍点,较双光束双曝光形成的孔侧壁更陡。这两种方法在需要在大面积范围内形成孔或点这类周期阵列图形的微电子和光电子器件的制造领域有很好的应用前景。     

用于大面积周期性图形制造的激光干涉光刻

用两束或多束相干激光束以不同的组合形式对光致抗蚀剂曝光,可在大面积范围内产生精细的二维周期性图形,这个方法特别适合于产生光电子器件和生电子器件的周期性结构。介绍激光干涉光刻的基本原理,对几种光束组合干涉方法给出了理论推导结果,并进行了计算机模拟。初步的实验结果表明,用激光干扰光刻技术产生大面积的亚微米级周期性孔、柱、锥图形是可行的。该方法不需要掩模、昂贵的光刻成像透镜、新的短波长光源和新型的抗蚀剂,提供了得到高分辨、无限焦深、大面积光刻的可能性。     

掩模投影成像干涉光刻研究

掩模投影成像干涉光刻技术以在很小或几乎不增加光刻系统成本的基础上来提高光刻分辨率为目的,充分利用系统的有限孔径,将掩模图形不同的空间频率分别进行传递,最终以高分辨率对掩模成像。本文阐述了IIL的基本原理,介绍了一种实验系统,并给出了部分模拟和实验结果。研究结果表明,掩模投影成像干涉光刻技术比传统投影光刻能够得到更高的光刻分辨率。     

用多光束干涉实现纳米级阵列图形的长焦深光刻

用多束相干光适当组合干涉曝光,得到的图形与基片在干涉场内的纵向位置z无关,与x、y位置呈周期关系,光的相干长度对应传统光学光刻的焦深。该方法适合大尺寸基片上纳米级孔、锥阵列图形的制作。模拟了双光束双曝光、三光束单曝光和四光束单曝光的干涉场光强分布,用波长为441.6nm的激光曝光得到尺寸为200nm的孔阵和点阵的图形。     

制作光纤光栅的相移掩模-双光束干涉曝光方法

介绍将无铬相移掩模技术和双光束干涉曝光技术用于制作纳米级图形光纤光栅的基本原 理和实验系统设计。提出一种用可移动反射镜使写入光束扫描固定在一起的相移掩模和光纤组合体制作光纤光栅的方法,既便于系统调整,增强曝光能量,又可方便制作高分辨力、长尺寸光纤光栅,无论是周期光栅,还是非周期光栅。     

成像干涉光刻技术及其频域分析

传统光学光刻技术(OL)由于其固有的限制,虽然可对任意图形成像,但分辨力较低。无掩模激光干涉光刻技术(IL)的分辨力可达l /4,却局限于周期图形。成像干涉光刻技术(IIL)结合了二者的优点,用同一个系统分次传递物体不同的空间频率,能更有效地传递物体的信息,以高分辨力对任意图形成像。初步模拟研究表明,在同样的曝光波长和数值孔径下,对同样特征尺寸的掩模图形,IIL得到的结果好于OL。在CD=150nm时,IIL相对于OL把分辨力提高了1.5倍多。     

用于100nm节点ArF准分子激光光刻的相移掩模技术

用于100nm节点ArF准分子激光光刻的相移掩模(PSM)技术主要有无铬相移掩模(CPM),交替相移掩模(APSM)、衰减相移掩模(AttPSM)和混合相移掩模技术。对这些掩模的基本原理、制作方法及性能比较进行了分析研究。研究表明,无铬相位光刻(CPL)PSM和高透AttPSM 相结合构成的混合掩模最适合用于193nmArF光刻,以产生100nm节点抗蚀剂图形。     

用于KrF准分子激光光刻的三相移掩模

讨论了相移掩模提高光刻分辨力的基本原理,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法,利用自行设计、建立的ＫｒＦ准分子激光投影光刻实验曝光系统进行了实验研究,给出了实验结果,并与传统光刻方法作了比较。     

用于KrF准分子激光光刻的衰减相移掩模

讨论了相移掩模提高光刻分辨力的基本原理,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法,利用自行设计、建立的KrF准分子激光投影光刻实验曝光系统进行了实验研究,给出了实验结果,并与传统光刻方法作了比较.     

透镜阵列光刻法消差原理分析

透镜阵列光刻法用一个柱面阵列透镜代替常规光刻法中的柱面透镜形成光程差,将由衍射所引起的瞬变图形错开,消除由于光刻模板与被刻光栅之间因间隙引起的衍射误差。用光学传递函数方法说明了透镜阵列消除光刻中衍射误差的原理。实验表明透镜阵列光刻法,可以较好的消除衍射误差,研制出高质量的光栅。     

Combined laser interference and photolithography patterning of a hybrid mask mold for nanoimprint lithography

A lithography technique that combines laser interference lithography (LIL) and photolithography, which can be a valuable technique for the low cost production of microscale and nanoscale hybrid mask molds, is proposed. LIL is a maskless process which allows the production of periodic nanoscale structures quickly, uniformly, and over large areas. A 257 nm wavelength Ar-Ion laser is utilized for the LIL process incorporating a Lloyd's mirror one beam inteferometer. By combining LIL with photolithography, the non-selective patterning limitation of LIL are explored and the design and development of a hybrid mask mold for nanoimprint lithography process, with uniform two-dimensional nanoscale patterns are presented. Polydimethylsiloxane is applied on the mold to fabricate a replica of the stamp. Through nanoimprint lithography using the manufactured replica, successful transfer of the patterns is achieved, and selective nanoscale patterning is confirmed with pattern sizes of around 180 nm and pattern aspect ratio of around 1.44:1.     

Fabrication of Micropatterned Self‐Oscillating Polymer Brush for Direction Control of Chemical Waves

The propagation control of chemical waves via a pentagonal patterned structure in a self‐oscillating polymer brush composed of N‐isopropylacrylamide and a metal catalyst for the Belousov–Zhabotinsky (BZ) reaction is reported. The patterned self‐oscillating polymer brush is prepared by combining surface‐initiated atom transfer radical polymerization and maskless photolithography. Surface modification is confirmed by X‐ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, 3D measuring laser microscopy, and fluorescence microscopy. The polymer brush patterns are fabricated with gaps between the pentagonal regions, and investigations on the effect of the gap distance on the BZ reaction reveal that at the appropriate distance, chemical waves propagate across the array from the plane to the corner between the patterns. Unidirectional control is achieved not only in the 1D array, but also in a 2D curved array. This patterned self‐oscillating polymer brush is a novel and advantageous approach for creating an autonomous dynamic soft interface.     

光瞳滤波提高投影光刻成像分辨力研究

针对投影光刻成像系统在数值孔径足够大时所产生的分辨力和焦深的矛盾,详细研究了光瞳滤波对投影成像对比度的改善情况,根据不同掩模图形设计对应的最优滤波器。研究结果表明,光瞳滤波能大幅度提高投影光刻成像分辨力并增大焦深,是一种比较有效的提高光刻成像分辨力的方法。     

Second-generation maskless photolithography device for surface micropatterning and microfluidic channel fabrication

We have previously reported on a maskless photolithography device for surface micropatterning and microfabrication by modifying a commercially available liquid crystal display projector. For the prototype, 10-microm resolution was achieved by downsizing the image on a 0.7-in. liquid crystal display panel to an area of 8 x 6 mm and projecting it on a fixed stage. Here, we report on a second-generation maskless photolithography device having two novel features. First, the sliding lens system with variable focal distances and exchangeable objective lenses achieves a variable resolution of 2-8 mum. Second, the synchronous control of displayed images generated by a personal computer and the movement of a XY-positioning stage allows for the fabrication of micropatterns over a larger area (over 50 x 50 mm). Here, we show examples fabricated with the two novel features.     

光刻技术及其极限和发展前景

介绍了一些新的光刻技术及光刻技术的极限和发展前景。     

微透镜列阵成像光刻调焦方法

本文分析了离焦量对微透镜列阵成像光刻图形质量的影响,给出了系统离焦量的容差.同时提出了一种结构简单、可应用于微透镜列阵成像光刻系统调焦的新方法.并将基于该调焦方法的实验装置应用于微透镜列阵成像光刻系统,进行了光刻实验.实验表明,利用该方法时微透镜列阵成像光刻系统调焦,可得到接近微透镜列阵极限像质的光刻图形.     

Microfabrication of electrode patterns for high-frequency ultrasound transducer arrays

High-frequency ultrasound is needed for medical imaging with high spatial resolution. A key issue in the development of ultrasound imaging arrays to operate at high frequencies (?30 MHz) is the need for photolithographic patterning of array electrodes. To achieve this directly on 1-3 piezocomposite, the material requires not only planar, parallel, and smooth surfaces, but also an epoxy composite filler that is resistant to chemicals, heat, and vacuum. This paper reports, first, on the surface finishing of 1-3 piezocomposite materials by lapping and polishing. Excellent surface flatness has been obtained, with an average surface roughness of materials as low as 3 nm and step heights between ceramic/polymer of ～80 nm. Subsequently, high-frequency array elements were patterned directly on top of these surfaces using a photolithography process. A 30-MHz linear array electrode pattern with 50-μm element pitch has been patterned on the lapped and polished surface of a high-frequency 1-3 piezocomposite. Excellent electrode edge definition and electrical contact to the composite were obtained. The composite has been lapped to a final thickness of ～55 μm. Good adhesion of electrodes on the piezocomposite has been achieved and electrical impedance measurements have demonstrated their basic functionality. The array was then packaged, and acoustic pulse-echo measurements were performed. These results demonstrate that direct patterning of electrodes by photolithography on 1-3 piezocomposite is feasible for fabrication of high-frequency ultrasound arrays. Furthermore, this method is more conducive to mass production than other reported array fabrication techniques.