Electrical and optical properties of 12CaO·7Al2O3 electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering

12CaO·7Al₂O₃ electride (C12A7:e⁻) doped indium tin oxide (ITO) (ITO:C12A7:e⁻) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e⁻ chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e⁻ thin film was higher than 70% in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 × 10²⁰ cm^− 3 to 2.1 × 10¹⁸ cm^− 3 and increase of the resistivity from 1.4 × 10^− 3 Ω cm to 4.1 × 10^− 1 Ω cm were observed with increasing number of C12A7:e⁻ chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm²·V^− 1·s^− 1 to 5.13 cm²·V^− 1·s^− 1. The work function of the ITO thin film was reduced by doping it with C12A7:e⁻.     

Growth, thermal and spectroscopic characteristics of LiNd(WO4)2 crystal

Crystal growth, thermal and optical characteristics of LiNd(WO₄)₂ crystal have been investigated. The LiNd(WO₄)₂ crystal up to Ø15 × 32 mm³ has been grown by Czochralski technique. The hardness is about 5.0 Mohs’ scale. The specific heat at 50 °C is 0.42 J g⁻¹ K⁻¹. The thermal expansion coefficient for c- and a- axes is 1.107 × 10⁻⁵ and 2.104 × 10⁻⁵ K⁻¹, respectively. The absorption and fluorescence spectra and the fluorescence decay curve of LiNd(WO₄)₂ crystal were measured at room temperature. Some spectroscopic parameters such as the intensity parameters, the spontaneous transition probabilities, the fluorescence branching ratios, the radiative lifetimes and emission cross sections were estimated.     

Biosensor enhanced by glucose oxidase biomimetic membrane containing the platinum and silica nanoparticles

In this paper, glucose biosensor is fabricated with immobilization of glucose oxidase (GOx) in platinum and silica sol. The glucose biosensor combined with Pt and SiO₂ nanoparticles could make full use of the properties of nanoparticles. A set of experimental results indicates that the current response for the enzyme electrode containing platinum and silica nanoparticles increases from 0.32 µA cm^− 2 to 33 µA cm^− 2 in the solution of 10 mM β-D-glucose. The linear range is 3 × 10^− 5 to 3.8 × 10^− 3 M with a detection limit of 2 × 10^− 5 M at 3σ. The effects of the various volume ratios of Pt and SiO₂ sols with respect to the current response and the stability of the enzyme electrodes are studied.     

Cu diffusion kinetics in (Cu, Ni)3Sn intermetallic compound nanolayers investigated by an Energy-Dispersive-X-ray-based permeation test

The Energy-Dispersive-X-ray-based permeation and oxidation test has been further developed by an improved theoretical analysis, in which chemical potential gradients rather than concentration gradients are employed. The developed test is able to characterize diffusion kinetics in diffusion barriers at the nanometer scale. The Cu flux coefficient in (Cu, Ni)₃Sn intermetallic compound nanolayers was determined from the test to be 8.48 × 10^− 15 mol·(m·s·J/mol)^–1 exp(− 52.3 kJ·mol^− 1/RT) in a temperature range of 250 °C–400 °C.     

Analyses of nano-crystalline LiCoVO4 prepared by solvothermal reaction

LiOH·H₂O, Co(NO₃)₂·6H₂O and NH₄VO₃ were used to prepare nano-crystalline LiCoVO₄ by 150 °C solvothermal reaction in isopropanol for 10–360 h and subsequent calcination at 300–500 °C for 6 h. XRD, TEM and selected area electron diffraction (SAED) revealed the presence of nano-crystalline LiCoVO₄ with inverse spinel structure. The V–O stretching vibration modes of VO₄ tetrahedrons were detected by FTIR over the range 617–835 cm^− 1 and by Raman spectrometer at 805.7 and 783.1 cm^− 1. Co, V and O were detected by EDX. TGA of solvothermal products shows weight loss due to the evaporation and decomposition processes at 40–648 °C.     

Aligned tungsten oxide nanowires on tungsten (100) substrates

WO₃ nanowires in body center cubic structure were grown on W (100) substrates by heating in an argon atmosphere. Scanning electron microscope and transmission electron microscope characterizations show the WO₃ NWs grew along the [100] crystallographic orientation and were aligned in three directions. The diameter of WO₃ NWs is in the range of several to 20 nm and the length is up to 1 µm. Field emission measurements show that the field emission current density can reach 1.8 mA/cm² under electrical field 10 V/µm and the turn-on field can be as low as 2.6 V/µm.     

Si diffusion in magnetron sputtered silicon carbide films deposited on silicon and carbon substrates

Self-diffusion of silicon in magnetron sputtered silicon carbide films deposited on different substrates (crystalline silicon and glassy carbon) is investigated. Since crystallization of amorphous silicon carbide films strongly depends on the substrate, the diffusivity of silicon is expected to depend on the substrate as well. Isotope hetero-structures and secondary ion mass spectrometry were used for analysis. For amorphous samples an upper limit of the diffusivity of 1 × 10^− 21 m²/s is derived at 1100 C°. For crystallized films diffusivities between 1350 °C and 1600 °C are found to be not significantly different for the two types of substrates. For samples deposited on glassy carbon substrates an activation enthalpy ΔH_D = (8.7 ± 0.9) eV was found for the self-diffusion of Si. The consequences of our findings for crystallization are discussed.     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Growth and optical characterizations of (Ba0.32Sr0.68)5Nb4O15 crystal

(Ba_0.32Sr_0.68)₅Nb₄O₁₅ crystal with sizes of Ø 17 × 35 mm was grown successfully by Czochralski technique method. The thermal anisotropy was discussed. The principal coefficients of thermal expansion along (100), (010), (001) directions were precisely measured to be 1.308 × 10^− 5, 1.288 × 10^− 5, 1.478 × 10^− 5 K^− 1, respectively. Its optical transparency range has been measured and found to span from 323 to 5500 nm. The bands present in the IR spectra were identified and assigned to the corresponding vibration modes of NbO₆ anions.     

Mercury(II) selective membrane electrode based on 1,3-bis(2-methoxybenzene)triazene

A plasticized poly (vinyl chloride) membrane electrode based on 1,3-bis(2-methoxybenzene)triazene (MBT) for highly selective determination of mercury(II) has been developed. The electrode showed a good Nernstian response (30.2 ± 0.3 mV decade^− 1) over a wide concentration range (1.0 × 10^− 7−1.0 × 10^− 2 mol L^− 1). The limit of detection was 5.0 × 10^− 8 mol L^− 1. The electrode has a response time about 15 s and can be used for at least 1 month without observing any deviation from Nernstain response. The proposed electrode revealed an excellent selectivity toward mercury(II) ion over a wide variety of alkali, alkaline earth, transition, and heavy metal ions and could be used in the pH range 2.6–4.2. The electrode was used in the determination of Hg²⁺ in aqueous samples and as an indicator electrode in potentiometric titration of Hg(II) ions.     

Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering

The transparent and conductive gallium-doped zinc oxide (GZO) film was deposited on 1737F Corning glass using the radio-frequency (RF) magnetron sputtering system with a GZO ceramic target. (The Ga₂O₃ contents are approximately 5 wt. %). In this study, the effect of the sputtering pressure on the structural, optical and electrical properties of GZO films upon the glass or polyester film (PET) substrate was investigated and discussed in detail. The GZO film was grown under a steady RF power of 400 W and a lower substrate temperature from room temperature up to 200 °C. The crystal structure and orientation of GZO thin films were examined by X-ray diffraction. All of the GZO films under various sputtering pressures had strong c-axis (002)-preferred orientation. Optical transparency was high (> 80%) over a wide spectral range from 380 nm to 900 nm. According to the experimental data, the resistivity of a single-layered GZO film was optimized at  8.3 × 10^− 4 Ω cm and significantly influenced by the sputtering pressure. In further research, the sandwich structure of the GZO film/Au metal/GZO film was demonstrated to improve the electrical properties of the single-layered GZO film. The resistivity of the sandwich-structured GZO film was around 2.8 × 10^− 4 Ω cm.     

Three-dimensional measurement of ice crystals in frozen dilute solution

A Micro-Slicer Image Processing System (MSIPS) has been applied to observe the ice crystal structures formed in frozen dilute solutions. Several characteristic parameters were also proposed to investigate the three-dimensional (3-D) morphology and distribution of ice crystals, based on their reconstructed images obtained by multi-slicing a frozen sample with the thickness of 5 μm. The values of characteristic parameters were determined for the sample images with the dimension of 530×700×1000 μm. The 3-D morphology of ice crystals was found to be a bundle of continuous or dendrite columns at any freezing condition. The equivalent diameter of ice crystals were in the range of 73–169 μm, and decreased exponentially with increasing freezing rate at the copper cooling plate temperature of −20 to −80 °C. At the T_cp −40 °C, the volumes of ice crystals were in the range of 4.6×10⁴ μm³ to 3.3×10⁷ μm³, and 36 ice columns were counted in the 3-D image.     

Transient flow behaviour in a near alpha titanium alloy Timetal 834 in the dynamic strain aging regime

The transient flow behaviour in Timetal 834 titanium alloy was studied in the temperature range between 400 °C and 475 °C by means of stress relaxation and reloading during tensile testing at a strain rate of 6.67 × 10⁻⁴ s⁻¹. The increment in flow stress during reloading (Δσ_f) and the decrement in flow stress during stress relaxation (Δσ_r) were measured at different strains at each temperature. The observation of maximum value of Δσ_f and Δσ_r, normalized with respect to the Young's modulus at the corresponding temperature, confirmed that the maximum dynamic strain aging (DSA) effect in this alloy occurs at 450 °C.     

Bending strength and effective modulus of atmospheric ice

Bending strength and the effective modulus of atmospheric ice accumulated in a closed loop wind tunnel at temperatures − 6 °C, − 10 °C and − 20 °C with a liquid water content of 2.5 g/m³ have been studied at different strain rates. More than 120 tests have been conducted. Ice samples, accumulated at each temperature, have been tested at the accumulation temperature. In addition, tests have been performed at temperatures of − 3 °C and − 20 °C, for the ice accumulated at − 10 °C. These tests showed a clear dependency of bending strength of atmospheric ice on test temperature at low strain rates. Strain rate effects are implied because the spread in bending strength for the different temperatures diminishes as strain rate increases. The results also reveal that, in most cases, the effective modulus of atmospheric ice increases with increasing strain rate. The bending strength of atmospheric ice accumulated at − 10 °C has been found to be greater than that of ice accumulated at − 6 °C and − 20 °C. The results show that the effective modulus of ice accumulated at − 20 °C at higher strain rates is less than that of the two other types.     

Enhancement of fatigue endurance and retention characteristic in Bi3.25Eu0.75Ti3O12 thin films

The effects of moderate annealing temperature (600–800 °C) on the microstructure, fatigue endurance, retention characteristic, and remnant polarization (2P_r) of Bi_3.25Eu_0.75Ti₃O₁₂ (BET) thin films prepared by metal-organic decomposition (MOD) were studied in detail. 2P_r (66 µC/cm² under 300 kV/cm), fatigue endurance (3% loss of 2P_r after 1.2 × 10¹⁰ switching cycles), and retention characteristic (no significant polarization loss after 1.8 × 10⁵s) for BET thin film annealed at 700 °C are better than those for thin films annealed at other temperature. The mechanisms concerning the dependence of microstructure and ferroelectric properties on the annealing temperature were discussed.     

Plastic deformation behavior in dual-phase Ni–31Al intermetallics at elevated temperature

Plastic deformation behavior of dual-phase Ni–31Al intermetallics at elevated temperature was examined. It was found that the alloy exhibited good plasticity under an initial strain rate of 1.25 × 10⁻⁴ s⁻¹ to 8 × 10⁻³ s⁻¹ in a temperature range of 950–1075 °C. A maximum elongation of 281.3% was obtained under an initial strain rate of 5 × 10⁻⁴ s⁻¹ at 1000 °C. The strain rate sensitivity, m value was correlated with temperature and initial strain rate, being in the range of 0.241–0.346. During plastic deformation, both the two phases Ni₃Al and NiAl in dual-phase Ni–31Al could co-deform without any void formation or debonding, the initial coarse microstructure became much finer after plastic deformation. Dislocation played an important role during the plastic deformation in dual-phase Ni–31Al alloy, the deformation mechanism in dual-phase Ni–31Al could be explained by continuous dynamic recovery and recrystallization.     

High-temperature stability of the mechanical and optical properties of Si–B–C–N films prepared by magnetron sputtering

Quaternary Si–B–C–N materials are becoming increasingly attractive due to their possible high-temperature and harsh-environment applications. In this work, amorphous Si–B–C–N films with two compositions (Si₃₄B₉C₄N₄₉ and Si₃₆B₁₃C₇N₄₀) and low contamination level (H + O + Ar < 4 at.%) were deposited on silicon substrates by reactive dc magnetron co-sputtering using two different targets and gas mixtures. Thermal stability of these films was investigated in terms of composition, bonding structure, as well as mechanical and optical properties after annealing in helium up to a 1300°C substrate limit. Films with a high nitrogen content (Si₃₄B₉C₄N₄₉, i.e. N/[Si + B + C]~ 1.0) were found to be stable up to 1300°C. After annealing, the hardness and elastic recovery of those films slightly increased up to 27 GPa and 84%, respectively, and the reduced Young's modulus remained practically constant (~ 170 GPa). The refractive index and the extinction coefficient at 550 nm were evaluated at 2.0 and 5 × 10^− 4, respectively, and the optical band gap was approximately 3.0 eV. In contrast, films with a lower nitrogen content (Si₃₆B₁₃C₇N₄₀, i.e. N/[Si + B + C]~ 0.7) were stable only up to 1200°C. Both Si–B–C–N materials studied here exhibited extremely high oxidation resistance in air up to the 1300°C substrate limit.     

Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz

We use a new in-house, large area and automated deposition system: the usable deposition area is 410 × 520 mm with RF-frequency of 40 MHz. We deposit intrinsic a-Si:H layer on flat p-type or n-type c-Si wafers after performing an HF dip. The overall recombination of these double-side passivated c-Si wafers is measured with an effective lifetime measurement set-up. We pay particular attention to the uniformity of the passivation obtained on the whole deposition area.We point out a major role of hydrogen dilution on quality of c-Si passivation. Excellent uniformity is obtained on the whole area with implied open-circuit voltages (V_oc) in a ± 1.5% range. We achieve excellent passivation with overall lifetimes approaching 7 ms (at Δn ≈ 4.5·10¹⁴ cm^− 3) resulting in implied V_oc of 708 mV on p-type c-Si; and lifetimes superior to 4.7 ms resulting in implied V_oc of 726 mV on n-type c-Si (S_eff less than 2 cm/s for both). These results open the way to very high efficiency heterojunction solar cell fabrication in large area reactors.     

Structural and electrical properties of Al doped ZnO thin films deposited at room temperature on poly(vinilidene fluoride) substrates

Transparent, conducting, Al-doped ZnO films have been deposited, by dc and pulsed dc magnetron sputtering, on glass and electroactive polymer (poly(vinylidene fluoride)–PVDF) substrates. Samples have been prepared at room temperature varying the argon sputtering pressure, after optimizing other processing conditions. All ZnO:Al films are polycrystalline and preferentially oriented along the [002] axis. Electrical resistivity around 3.3 × 10^− 3 Ω cm and optical transmittance of ~ 85% at 550 nm have been obtained for AZOY films deposited on glass, while a resistivity of 1.7 × 10^− 2 Ω cm and transmittance of ~ 70% at 550 nm have been attained in similar coatings on PVDF. One of the main parameters affecting film resistivity seems to be the roughness of the substrate.     

The influence of dynamic strain aging on the low cycle fatigue behavior of near alpha titanium alloy IMI 834

Total strain controlled low cycle fatigue tests on IMI 834 have been conducted in air in the temperature range between 375 and 500 °C at a temperature interval of 25 °C at the nominal strain rate of 6.67 × 10⁻⁴ s⁻¹. The observed maximum peak stress ratio, minimum half-life plastic strain range and lower fatigue life at 425 °C indicates the occurrence of dynamic strain aging (DSA). Pronounced deformation bands, increased dislocation density and non-uniform dispersion of dislocations inside primary α grains observed by the study of transmission electron microscopy supports the occurrence of dynamic strain aging. Initial cyclic softening was attributed to shearing of Ti₃Al precipitates as revealed by TEM evidences.