Chemical deposition of Al2O3 thin films on Si substrates |
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Authors: | P Vitanov A Harizanova T Ivanova T Dimitrova |
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Affiliation: | aCentral Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria;bFour Dimensions, Inc. Hayward, CA., USA |
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Abstract: | Uniform Al2O3 films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 1011 eV− 1cm− 2 for annealing temperature at 750 °C. |
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Keywords: | Sol– gel Dielectric properties Al2O3 MIS structure C– V measurements |
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