Pr3+/Yb3+共掺碲酸盐玻璃发光特性的研究

根据Pr3 /Yb3 共掺碲酸盐玻璃在 980nm附近的吸收谱及 1.3 1μm处的发射谱 ,研究了玻璃样品光谱特性随稀土离子浓度变化的规律。结果表明 :在Yb3 离子浓度不变的情况下 ,1.3 1μm处的发光随着Pr3 离子浓度的增加 ,其强度先增后减 ,并在浓度为 0 .15mol%时达到最大值 ,同时根据Judd -Ofelt理论计算了稀土离子的光辐射特性     

掺Pr3+碲酸盐玻璃的红外及上转换发光

根据掺Pr^3 碲酸盐玻璃在980nm附近的吸收谱及1．31μm和可见光区间内的荧光发射谱，研究了玻璃样品光谱特性随稀土离子浓度变化的规律及其上转换发光．结果表明：在Yb^3 离子浓度不变的情况下，1．31μm处的发光随着Pr^3 离子浓度的增加，其强度先增加而后减小，并在浓度为0．15mol％时达到最大值，同时根据Judd-Ofelt理论计算了稀土离子的光辐射特性．     

Er~(3+)/Nd~(3+)共掺铋锗酸盐玻璃2.7μm光谱性质研究（英文）

用高温熔融法制备了Er3+/Nd3+共掺铋锗酸盐玻璃,研究了玻璃的吸收光谱和在808 nm抽运下的荧光光谱。研究表明:对应于2.7μm发光,Er3+/Nd3+共掺铋锗酸盐玻璃具有大的自发辐射几率(58.46 s-1)和受激发射截面(8.34×10-21cm2)。通过对铒钕离子之间能量传递微观系数和效率的计算得知,钕离子不但可以增加铒离子2.7μm发光上能级的布局数,而且可以减小其下能级的布局数,良好的2.7μm发光性质表明Er3+/Nd3+共掺铋锗酸盐玻璃是一种潜在的中红外发光激活介质。     

Ho3+/Yb3+共掺的氧氟硅酸盐微晶玻璃上转换发光

制备了Ho3+/Yb3+共掺的氧氟硅酸盐玻璃,根据玻璃样品的差热分析(DTA)进行微晶化处理,测试了Ho3+/Yb3+共掺微晶玻璃的X射线衍射(XRD)图谱、透射电镜(TEM)谱、吸收光谱和上转换发光光谱.根据Scherrer公式计算了CaF2微晶的平均晶粒尺寸,并与TEM谱进行比对;利用晶体生长动力学理论研究了纳米CaF2晶粒的生长特性,获得纳米CaF2晶体生长动力学方程;研究了.微晶玻璃中Ho3+离子的上转换发光特性;分析了微晶玻璃上转换发光机制.研究结果表明氧氟硅酸盐微晶玻璃是一种良好的上转换基质材料.     

光学碱度与能量传递对Bi/Yb~(3+)共掺杂锗酸盐玻璃近红外发光性质的影响（英文）

采用传统高温熔融法制备了Bi/Yb~(3+)共掺杂锗酸盐玻璃,通过吸收光谱、近红外光谱和荧光衰减寿命测试,研究了玻璃样品的近红外发光性质.研究结果表明,玻璃样品在980 nm或808 nm激光激发下,均能同时观察到Yb~(3+)离子和Bi离子的近红外发光,Yb~(3+)离子与Bi离子之间存在相互能量传递.随着Yb~(3+)离子浓度的增加,玻璃基质的光学碱度和Yb~(3+)离子到Bi离子的能量传递效率均增加,讨论了能量传递效率的提高对Bi离子发光的增强作用与光学碱度增加对Bi离子发光的削弱作用的竞争影响机制,获得了Bi/Yb~(3+)离子共掺杂锗酸盐玻璃的近红外发光的机理.     

Er3+/Ce3+共掺铋锗酸盐玻璃及其光纤的制备和光谱性质

用高温熔融法制备了Er3+/Ce3+共掺铋锗酸盐(Bi2O3-GeO2-Ga2O3-Na2O)玻璃,研究分析了该玻璃中Er3+离子1.5μm波段荧光和上转换发光,Ce3+离子共掺引入的Er3+:4I11/2→Ce3+:2F5/2间能量传递能有效地抑制上转换发光并增强1.5μm波段荧光发射.同时,利用该组分玻璃拉制了包层直径为125 μm的铋锗酸盐玻璃掺Er3+光纤,1310 nm波长处光纤传输损耗为3.4 dB/m.通过对975 nm波长激励下光纤的放大自发辐射(ASE)测试表明,铋锗酸盐玻璃掺Er3+光纤可在1450～1650 nm波长范围获得宽带ASE光谱,因此是一种适用于宽带光纤放大器的增益介质.     

Yb3+对掺铒碲酸盐玻璃红外和上转换发光的影响

研制了Er3+/Yb3+共掺TeO2-ZnO-La2O3玻璃,测试了Er3+离子的吸收谱、荧光谱和上转换发光谱,系统研究了975 nm抽运下Yb3+离子对于Er3+离子1.5 μm波段荧光性能及其上转换发光性能的影响.结果表明,随着碲酸盐玻璃中Yb2Os含量的增加,Yb3+离子对Er3+离子的能量传递增强,Er3+离子1.5 μm波段的荧光强度和上转换发光强度相应增大,但后者相对于前者增加更为迅速.通过对粒子数速率方程的理论模拟,计算结果与实验测量结果较为一致,表明Er3+/Yb3+共掺碲酸盐玻璃是一种优良的潜在上转换激光器增益介质.对上转换发光分析表明,强烈的绿光和红光激发是基于双光子的吸收过程.     

氟化物玻璃在两束激光作用下的上转化三维立体显示

研究了两束激光作用下的上转换三维(3D)立体显示,所用材料为ZBLAN:Pr,Yb氟化物玻璃。所用的两束激光是波长分别为960 nm(半导体激光器)和820 nm(Ti宝石激光器)。对Pr3+离子双频上转换发光进行了研究,分析了上转换发光强度与抽运光强度和离子掺杂浓度的关系,从而得出了实现较清晰双频上转换3D立体图像的实验条件。ZBLAN玻璃为双频上转换3D立体显示的基质材料,主要由于其有非常好的声子光谱声子频率小于580 cm-1;当激光强度很小时,上转换荧光强度将随着两抽运激光强度的增加而线性增加;ZBLAN玻璃中Pr3+离子和Yb3+离子的最佳掺杂摩尔分数为0.5%和1.5%。     

Er3+离子对Er3+/Tm3+共掺碲酸盐玻璃1.85μm波段光谱特性的影响

采用高温熔融淬火技术制备了1.0 mol% Tm3＋离子和x mol% Er3＋离子(x=0,0.5和1.5 mol%)掺杂 的系列碲酸盐玻璃,通过测量玻璃样品的差热扫描曲线(DSC)、X射线衍射(XRD)图和荧光光 谱,对不同 Er3＋浓度下的玻璃物理性能和Tm3＋离子荧光特性进行了研究。DSC结果显 示,研制的稀土掺杂碲酸盐玻璃 具有优异的热稳定性能,玻璃样品的析晶温度与转变温度之差大于130 ℃,而XRD图则证实了研制的玻璃 样品具有非晶结构特征。在808 nm泵浦激励下,随着Er3＋离 子的引入,Tm3＋离子³F₄→³H₆能级间跃迁产生 的1.85 μm波段荧光显著增强。当Er3＋离子掺杂浓度为1.0 mol%时,荧光强度提高了约76%,荧光强度的 显著增强归因于Er3＋离子和Tm3＋离子之间的能量传递。然而,随着Er 3＋离子掺杂浓度的继续增加,1.85 μm 波段荧光呈现出衰减现象,这归结于Er3＋离子浓度的淬灭效应。研究表明,具有合 适浓度Er3＋/Tm3＋共掺碲 酸盐玻璃是一种应用于1.85 μm波段固体激光器和光纤放大器的理想 基质材料。     

铋掺杂玻璃的红外发光机理和宽带光放大

铋掺杂玻璃具有宽带红外发光特性,有望应用于宽带光纤放大器和超短脉冲激光等领域,近几年来受到了人们的关注.迄今为止.已用铋离子掺杂玻璃实现了第二个光通讯窗口(1.3μm)的光放大和激光输出,及同时覆盖第二和第三(1.55 μm)光通讯窗口的超宽带光放大.铋离子掺杂玻璃红外发光的研究从材料学的角度考虑,目前还有待解决的重要问题可归纳为以下两个方面:1)红外发光的起源;2)发光性能的进一步提高.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.