用于开关DC-DC变换器的高精度片上电流检测电路

设计了一种应用于开关DC-DC变换器的高精度片上电流检测电路。与传统方法相比,该电流检测方式采用无运算放大器的结构,去除了无运算放大器结构中的电流共享,从而提高了电流检测精度。将该电流检测电路应用于一款同步降压型DC-DC变换器,芯片采用0.35μm标准CMOS工艺。实验结果显示,电流检测精度在轻负载时可达98.7%,在大负载时高达99.7%。     

双极型高精度大负载电流集成电压基准源设计

设计并实现了一种基于双极型工艺的2.5V高精度大负载电流集成基准电压源电路,通过对传统带隙基准电路的改进,设计中增加了电源电压分配电路、电流反馈电路和大电流驱动电路,实现高精度大负载电流的目标.通过Cadence软件平台下的Spectre仿真器对电路的温度系数、负载调整率、噪声、交流电源纹波抑制比、负载电流、启动时间等电参数进行仿真验证,得到了初始精度±0.5%,在-40～85℃范围内温度系数小于6×10-6/℃,负载电流0～50 mA,电源电压4.5～36 V,输出为2.5 V的集成电压基准源电路.该电路采用6 μm/36 VK极型工艺生产制造,芯片面积为1.7 mm×2.1 mm,具有过热保护、过流保护和反接保护功能.     

一款灌入/拉出3A电流跨导驱动快速瞬态响应低漏失稳压器

本文设计了一款可以灌入(sink)和拉出(source)3A电流,低电源、低功耗的CMOS低漏失电压线性稳压器。采用电流镜像结Gm(跨导)驱动的LDO架构可以获得高稳定性和快速负载瞬态响应。基于UMC 0.5um标准CMOS工艺投片验证,芯片面积为1.0mm2。空载时该LDO静态电流为220uA,最大带载3A。测试表明,使用30uF陶瓷电容,在-1.8A到 1.8A 0.1us负载跳变时,该LDO可以在低于2us的时间达到稳态,且过冲小于1mV。     

单芯片高效率降压DC-DC芯片设计

介绍了一种单芯片DC-DC转换器IC设计与电路实现,其特点是宽负载电流条件下具有较高效率.芯片的设计和仿真基于上华0.6 μm双阱、混合信号CMOS工艺.芯片的工作电压范围为2～5 V,可以使用于一般的电池供电设备.对提高芯片效率的方法以及效果进行了详细的讨论分析.仿真结果表明,芯片可以产生稳定的1.8 V输出电压,并提供大于500mA的输出电流,而纹波电压却小于5 mV.芯片可以获得93.8%的最大转换效率,而且在5～500 mA的负载电流范围内,效率始终高于86.2%.     

7.5V高精度BiCMOS电压调整器的设计

提出一种应用于有源功率因数校正控制芯片的7.5 V高精度线性电压调整器的设计.由于采用了多种改进措施,包括片上微调电阻网络的应用,该调整器具有良好的电压调整特性和很高的温度稳定性.此外,调整器还集成了过流保护功能.该电路采用1.5μm BiCMOS工艺设计实现,面积为0.42 mm×0.63 mm.测试结果表明,在12 V供电电压下,当负载电流在0～20 mA范围内变化时,其负载调整率达23%/A.片上微调电阻的应用使其可获得很低的温度系数.     

高精度数控恒流源的设计与实现

为了满足可调温无纺布热切割机对恒流源的需求,文章阐述了一种基于单片机的高精度数控恒流源的设计和实现方法。该电源以电流串联负反馈式压控恒流源电路为基础,以AT89S52单片机为控制核实现数字化控制。为实现高精度要求,在数控部分中,要采用12位高精度数字模拟转换器(Digital Analog Converter,DAC)芯片TLV5616控制压控恒流源的输出电流,并利用16位高精度模数转换器(Analog to Digital Converter,ADC)芯片ADS1115测量输出电流。文章采用矩阵键盘设定电流输出值,采用LCD12864液晶屏显示设定的电流和负载两端电压值。测试结果表明,本恒流源在20~2000m A输出电流时,输出电流与给定值误差小于5m A。     

应用于AMOLED源极驱动的高精度DAC设计

针对OLED显示面板更高分辨率、更高精度的需求,本文提出了一种应用于高分辨率AMOLED源极驱动的高精度10bit DAC结构。设计的DAC由6bit的GAMMA校正电阻串DAC及4bit的基于尾电流源插值的输出缓冲器级联构成,达到高精度的同时占用较小的芯片面积。为进一步提高AMOLED驱动的灰阶电压精度,增加了一个DAC斜率可编程单元对线性DAC输出曲线进行进一步调节,以更好地拟合AMOLED显示屏所需的灰阶-电压曲线,此外,输出缓冲器采用尾电流源插值的方法来实现高精度的第二级DAC。在UMC 80nm CMOS工艺下,仿真结果表明设计的DAC的最大INL和DNL分别为0.47LSB、0.24LSB。在10kΩ电阻及30pF电容负载下,DAC电压从最低灰阶到最高灰阶的建立时间为3.38μs。驱动电路可以快速、精确地将图像数据转换为建立在像素电路上的电压,满足分辨率为1080×2 160驱动芯片的应用需求。     

高精度宽范围可调的LED驱动控制器的设计与实现

本文提出一种新颖的高精度宽范围可调的LED恒流驱动控制器的设计,与传统的恒流驱动电路不同,该电路采用漏端电压固定的MOS管代替传统的镜像电阻,并加入运放负反馈结构来保证所有镜像器件的端电压完全相等,得到不受输出端负载电压影响的精确可调的输出电流。同时通过新颖的电流分段镜像（CSM）机制,优化了镜像MOS管的电气特性,从而保证了高精度输出电流的宽范围。基于该方案采用TSMC 0.6μm BCD工艺设计实现了一款面积为1.1×0.7mm2的三通道LED恒流源驱动芯片。投片测试结果表明,该LED驱动控制器工作状态良好,输出电流范围为5mA～60mA,电流精度的相对误差小于1%,通道间电流匹配的相对误差不超过1.5%。     

一种应用于胶囊机器人的高效全波整流芯片

通过对全波整流电路的建模,分析了影响全波整流芯片效率的主要因素,在此基础上,设计了一种应用于胶囊机器人的高效全波整流电路.采用SMIC 0.18 μm工艺进行流片,芯片面积为450×250(μm2),整流芯片工作于2.8 MHz.测试结果表明,在驱动12 mA负载电流时,电压传输效率高达88％.     

一种具有750mA输出电流,双模式PWM/PFM控制的高效率直流-直流降压转换器

提出了一种输出电流可达750mA,脉宽调制（PWM）和变频调制（PFM）双模式控制的,高效率、高稳定性直流-直流降压转换器.该转换器在负载电流大于80mA时,采用开关频率为1MHz的PWM工作模式;在负载电流小于80mA时,采用开关频率减小和静态电流降低的PFM工作模式,实现了在整个负载电流变化范围（0.02~750mA）内,转换器均保持高效率.而且采用一种快速响应的电压模式控制结构,达到了优异的线性和负载调整特性.芯片采用CSMC公司0.5μm CMOS 2P3M混合信号工艺物理实现.测试结果表明,该电路可根据负载的变化在PWM和PFM模式下自动切换.最大转换效率达96.5%;当负载电流为0.02mA时,转换效率大于55%.该芯片特别适合电池供电的移动系统使用.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.