|
|||||
|
|
Effects of rapid thermal annealing on ohmic contact of AIGaN/GaN HEMTs |
|
| Affiliation: | [1]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology,Beijing 100124, China [2]Network Management Center, China Unicorn Beijing Branch, Beijing 100029, China |
| Abstract: | AlGaN/GaN HEMT RTA ohmic contact |
| Keywords: | AlGaN/GaN HEMT RTA ohmic contact |
| 本文献已被 维普 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |
