带有自适应频率校准单元的26~41 GHz锁相环

采用45 nm SOI CMOS工艺,设计了一种带有自适应频率校准单元的26~41 GHz 锁相环。该锁相环包括输入缓冲器、鉴频鉴相器、电荷泵、环路滤波器、压控振荡器、高速时钟选通器、分频器和频率数字校准单元。采用了基于双LC-VCO的整数分频锁相环,使用了自适应频率选择的数字校准算法,使得锁相环能在不同参考时钟下自适应地调整工作频率范围。仿真结果表明,该锁相环的输出频率能够连续覆盖26~41 GHz。输出频率为26 GHz时,相位噪声为-103 dBc/Hz@10 MHz,功耗为34.64 mW。输出频率为41 GHz时,相位噪声为-96 dBc/Hz@10 MHz,功耗为35.44 mW。     

具有稳定工作状态的无线接收用超再生振荡器

介绍了一种用于无线接收机的具有稳定工作状态的超再生振荡器.这一超再生振荡器的起振时间被由超再生振荡器、高效率包络检波器和高精度电荷泵等构成的类似于锁相环的环路锁定在某一固定状态上.文中建立了环路的离散模型,分析了环路的稳定性,并介绍了主要的模块电路.该振荡器采用0.5μm CMOS工艺实现,工作在315MHz/433MHz的工业、科学和医药(ISM)频率段,电源电压为2.5～5.5V测试结果显示,振荡器的起振时间与工艺、温度、工作频率和电源电压等无关.     

具有稳定工作状态的无线接收用超再生振荡器

介绍了一种用于无线接收机的具有稳定工作状态的超再生振荡器.这一超再生振荡器的起振时间被由超再生振荡器、高效率包络检波器和高精度电荷泵等构成的类似于锁相环的环路锁定在某一固定状态上.文中建立了环路的离散模型,分析了环路的稳定性,并介绍了主要的模块电路.该振荡器采用0.5μm CMOS工艺实现,工作在315MHz/433MHz的工业、科学和医药(ISM)频率段,电源电压为2.5～5.5V测试结果显示,振荡器的起振时间与工艺、温度、工作频率和电源电压等无关.     

QAM全数字接收机载波相位恢复环路

本文着重研究全数字QAM接收机中载波恢复环路的设计，采用快慢两个数字环路来进行载波恢复，慢环路由锁频器（Frequency Detector)，锁频锁相器（Phase and Frequency Detector)等组成，快环路由相痊解旋器和锁相器（Phase Detector)组成，仿真结果表明，在AWGN条件下，两个环路的环路参数设置存在一个最佳点，当两个环路工作在这个最佳点附近时接收机能够很好的进行载波频率，相位的恢复，相位噪声对接收机性能的影响最小，最后，给出了在不同信噪比下的最佳环路参数表。     

CMOS毫米波低相噪级联双锁相环频率综合器设计北大核心

采用65 nm CMOS工艺，设计了一种低相噪级联双锁相环毫米波频率综合器。该频率综合器采用两级锁相环级联的结构，减轻了单级毫米波频率综合器带内和带外相位噪声受带宽的影响。时间数字转换器采用游标卡尺型结构，改善了PVT变化下时间数字转换器的量化线性度。数字环路滤波器采用自动环路增益控制技术来自适应调节环路带宽，以提高频率综合器的性能。振荡器采用噪声循环技术，减小了注入到谐振腔的噪声，进而改善了振荡器的相位噪声。后仿真结果表明，在1.2 V电源电压下，该频率综合器可输出的频率范围为22～26 GHz,在输出频率为24 GHz时，相位噪声为-104.8 dBc/Hz@1 MHz,功耗为46.8 mW。     

应用于2Mb/s GMSK调制的CMOS低功耗全差分Sigma-Delta频率综合器

设计了应用于GMSK调制,工作在2.4GHz,CMOS全差分的∑-△频率综合器.调制器中采用预补偿的分数N锁相环.推导了Ⅱ型三阶锁相环的传输函数,并指出影响环路传输函数的重要参数.介绍了校准重要的环路参数的方法.锁相环设计中采用差分调节的LC压控振荡器和全差分的电荷泵.设计的电路利用0.18μm 1P6M CMOS工艺进行仿真.由于锁相环的组成模块中采用了低功耗设计,锁相环的功耗仅为11mW左右,调制器的数据率达到2Mb/s.     

应用于2Mb/s GMSK调制的CMOS低功耗全差分Sigma-Delta频率综合器

设计了应用于GMSK调制,工作在2.4GHz,CMOS全差分的∑-△频率综合器.调制器中采用预补偿的分数N锁相环.推导了Ⅱ型三阶锁相环的传输函数,并指出影响环路传输函数的重要参数.介绍了校准重要的环路参数的方法.锁相环设计中采用差分调节的LC压控振荡器和全差分的电荷泵.设计的电路利用0.18μm 1P6M CMOS工艺进行仿真.由于锁相环的组成模块中采用了低功耗设计,锁相环的功耗仅为11mW左右,调制器的数据率达到2Mb/s.     

载波快速捕获与跟踪的双数字锁频环路无缝切换

锁频环广泛应用于载波频率快速同步的场合,为解决大捕获范围和跟踪精度之间的矛盾,通常捕获和跟踪状态时采用带宽不同的频率锁定环路,并根据载波同步情况进行切换.对这种硬切换所导致的跟踪环路的收敛过程、瞬态时间进行分析,并基于二阶锁频环与卡尔曼滤波等效结构,应用卡尔曼滤波算法进行两种状态之间环路增益时变的无缝切换.推导出高动态数字直扩接收机差积鉴频二阶锁频环路无缝切换控制增益,两种切换方式的仿真结果表明无缝切换的效果优于传统的硬切换方式.     

2.488 Gbit/s时钟数据恢复电路的设计

利用Cadence集成电路设计软件,基于SMIC 0.18 μm 1P6M CMOS工艺,设计了一款2.488 Gbit/s三阶电荷泵锁相环型时钟数据恢复(CDR)电路.该CDR电路采用双环路结构实现,为了增加整个环路的捕获范围及减少锁定时间,在锁相环(PLL)的基础上增加了一个带参考时钟的辅助锁频环,由锁定检测环路实时监控频率误差实现双环路的切换.整个电路由鉴相器、鉴频鉴相器、电荷泵、环路滤波器和压控振荡器组成.后仿真结果表明,系统电源电压为1.8V,在2.488 Gbit/s速率的非归零(NRZ)码输入数据下,恢复数据的抖动峰值为14.6 ps,锁定时间为1.5μs,功耗为60 mW,核心版图面积为566 μm×448μm.     

一种具有良好温度稳定性的低功耗CMOS振荡器北大核心CSCD

设计了一款带有频率自动校准功能的低功耗CMOS RC振荡器。频率校准电路采用全数字实现方式,通过自动调整振荡器的电容阵列将输出时钟调谐到理想的精度。振荡器内部采用线性稳压方式降低振荡电路部分的供电电压来降低功耗,同时通过调谐由相反温度系数电阻组成且具有温度系数补偿的电阻阵列达到良好的温度稳定性。测试结果表明,振荡器的时钟精度由校准前的0.902 MHz提高到校准后的1.000 MHz,当温度从-20℃变化到60℃时,时钟精度稳定在0.2%以内。通过对99颗芯片进行频率统计,6σ范围内的时钟精度在0.8%以内。该振荡器采用TSMC 0.35μm CMOS工艺流片,在3.3V供电电压下模拟电路功耗为19.8μW。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its