半导体放电管多元胞结构模型

在半导体放电管的版面设计上提出了多元胞结构版图.对多元胞结构“短路模型”进行了理论分析和实验验证,结果表明合理设计多元胞版图尺寸和P基区薄层电阻可以改善器件的转折导通特性和提高器件的抗雷电浪涌能力,从而为简化半导体放电管生产工艺提供了依据.     

分布式多元胞集成半导体放电管的设计与工艺

介绍了一种分布式多元胞集成半导体放电管的结构设计和工艺方法。在保持传统单元胞放电管器件表面总面积和放电管纵向剖面NPNPN五层结构不变的情况下,将放电管发射区等分成2(N+1)2个(N取0,1,2,3,4),构成在基区中心对称的多元胞结构。该结构优化了放电管阴极发射区的分布,使浪涌电流在整个芯片平面上趋于均匀,降低了发射区的热量集中效应;同时增加了电流放大系数,减少了放电管的开通时间。采用镓扩散、玻璃钝化等工艺流程,制作出分布式多元胞集成半导体放电管,解决了单元胞放电管散热不均匀、响应速度慢及可靠性差的问题。雷电波冲击电流测试表明,该结构提高了器件的抗电涌能力,可广泛应用于通信领域的雷电防护。     

提高半导体放电管抗浪涌能力的研究

半导体放电管是新一代抗浪涌保护器件，抗浪涌能力是其最重要的特性参数之一。文中分析了浪涌条件下器件失效的高温物理机制，讨论了器件功耗与传热对抗浪涌能力的影响，指出采用多元胞结构可降低由热量集中造成的最高结温，从而提高了器件的抗浪涌能力。     

半导体放电管

分析了造成电压瞬变和浪涌的原因，介绍了相应的防护办法，叙述了新型过压保护器件－半导体放电管的结构、特点，应用以及与其它传统的保护器件（TVS二级管、半导体放电管）的区别。     

用半导体放电管保护通信设备

用半导体放电管保护通信设备彭延凤,郑小鹿半导体放电管是在最近五、六年中发展起来的新型过电压保护器,它是基于可控硅原理和结构的一种二端负阻器件,用于保护敏感易损的集成电路,使之免遭雷电和突波的冲击。本文以美国Ｔｅｃｃｏｒ电子公司的半导体放电管ＩＳＤＡＣ...     

新型半导体防雷放电管

新型半导体防雷放电管黄尚贤双向二端子闸流管式新型半导体防雷放电管（以下简称半导体放电管）是取代现有气体放电管保护电话交换机和用户终端设备抗雷涌的理想器件。这种半导体放电管既适用于普通电话的３００ＨＺ～３４００ＨＺ模拟传输，也适用于ＩＳＤＮ的２Ｂ＋Ｄ（...     

多元胞半导体电涌吸收器件的研究

设计并试制了一种多元胞结构的半导体电涌吸收器件（ＳＳＡＤ），旨在降低器件工作时的最高温度并提高其过浪涌能力。初步实验结果证明器件经历过电涌后，其失效率比单元胞有较显著的降低。     

半导体放电管

介绍了用于通信保安单元中的新一代过压保护器件——半导体放电管，简述了它的特点、工作原理、结构及应用。     

半导体放电管定量自动注胶装置设计

半导体放电管是一种瞬态过压保护器件,广泛应用于通讯、铁路等行业。为了提高半导体放电管注胶工艺的自动化水平,给出了一种半导体放电管定量自动注胶装置的设计。该装置能够按需调节供胶量,供胶过程中能够自动去除绝缘胶中所混有的气泡,并具有注胶装置自动清洗的特点。该装置的设计解决了半导体放电管涂胶工艺中的关键性技术难题,实现了不同规格放电管的定量自动注胶。     

半导体放电管

介绍了用于通信保安单元中的新一代过压保护器件－半导体放电管，简述了它的特点，工作原理，结构及应用。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.