一种增强VPN安全性的设计方案

针对MPLS VPN不提供加密、认证,只能实现点到点的安全,不能提供细粒度的安全服务,不适合企业构造复杂的安全性要求非常高的网络问题,提出了一种增强VPN安全性的设计方案.此方案通过将MPLS技术与IPSec技术结合,采用加密认证等密码技术,实现了细粒度的基于安全域和角色的安全服务策略,保证了数据的完整性和保密性.     

基于国家标准的SSL VPN安全网关研究与实现

SSL VPN安全网关为传输层和应用层协议提供安全隧道,利用安全隧道技术,在传输层实现互联网网络信息的安全保护,能够利用公共网络为用户建立虚拟的专用网络,提供比专网更加安全的通信信道。SSL VPN安全网关以国家密码管理局审批的密码卡为基础密码器件,为其提供密钥运算、密钥保护、密钥备份恢复等功能;操作系统采用裁剪的Linux系统,同时,严格遵循国家密码管理政策和相关设计规范,实现了基于传输层的SSL VPN安全网关,为各种应用提供了身份认证和安全传输的需求。在政府、金融、运营商、能源、交通等领域具有广泛的用途,有明显的社会效益和经济效益。文章对此展开了分析。     

基于多协议标记交换的虚拟专用网

介绍了IP VPN的基本概念和主要技术,阐述了基MPLS技术实现VPN的优势、原理和方法,并讨论了MPLC VPN中复用、安全、应用和实现模型等问题。     

基于IPSec的电子政务MPLS VPN实现

MPLS VPN技术能够满足电子政务中隔离业务流的安全要求,对数据流进行流量管理,实现QoS保证,但它采用明文传输方式容易导致泄密,而IPSec采用加密、认证等安全技术,能够保证MPLS VPN传输中的数据安全性。文中通过对常见实施方法进行分析对比,提出了一种把IPSec融入MPLS内外标签封装过程的方法,利用IPSec的安全可靠及MPLS的高速交换、QoS保证的优点,提供安全、高效、透明的电子政务VPN服务,并给出了实施过程。     

一个VPN应用系统的设计与实现

介绍了一个利用VPN技术实现的网络系统应用实例，充分体现VPN应用系统低成本和安全的特点。简要介绍和比较了当前较为成熟的VPN技术方案的特点，为政府部门和机关团体单位利用公共网络建立自己专用的应用系统起到了抛砖引玉的作用。     

VPN技术简述及应用

本文阐述了VPN及其实现的主要技术。介绍什么是VPN,探讨了VPN的产生背景及其能够实现的功能,VPN利用不可靠的公用互联网络作为信息传输媒介,通过附加的安全隧道,用户认证,访问控制等技术实现与专用网络类似的安全性能;接着分析了实现VPN的隧道技术和隧道协议,并着重分析了第二层隧道协议和IPSec第三层隧道协议的实现原理;最后对VPN的未来进行了预测并说明了在中国制约VPN发展的客观因素和主观因素。     

VPN技术在民航空管网络中的应用

民航是一个特别关注新技术发展的前沿行业,也是一个对安全有着异常执着的行业。在VPN技术的应用上,特别凸显出这两者矛盾所在,一方面空管不断探索VPN的应用,去改进工作方法,提升工作效率,大家在日常生产、办公过程中都能够看到VPN的身影;而另一方面,出于信息安全的考虑以及管理人员的不了解,VPN的应用长期处于瓶颈状态。怎样合理、高效地利用VPN为工作、生活服务就摆在了当下民航空管人员的面前,而这也同样是制约政府、银行等关注安全单位发展的关键问题。希望本文的介绍能够对这些单位或个人提供一定的借鉴。     

组播在MPLS VPN 网络中的实现

组播作为一种高效的大数据量传播方式,以其对网络资源的优化利用得到了业界广泛的认可;新兴MPLS VPN 技术以优秀的流量管理、服务质量保证及较高的安全性为传统的纯IP数据网络解决了数据的流量平衡、业务流的服务质量及企业通过公共网互联的安全问题.组播技术与MPLS VPN技术的结合将为运营商提供一个前所未有的多业务发展空间.     

组播在MPLS VPN网络中的实现

组播作为一种高效的大数据量传播方式,以其对网络资源的优化利用得到了业界广泛的认可;新兴MPLS VPN 技术以优秀的流量管理、服务质量保证及较高的安全性为传统的纯IP数据网络解决了数据的流量平衡、业务流的服务质量及企业通过公共网互联的安全问题.组播技术与MPLS VPN技术的结合将为运营商提供一个前所未有的多业务发展空间.     

VPN软管模型中多径路由的实现算法

虚拟专用网(VPN)技术可以在一个公共的接入网上提供类似专用网络的服务。相对于最初的管道(pipe)模型,Duffield等提出了软管(hose)模型,本文讨论了软管模型在多径路由下的实现。给出了一个多项式时间的资源预留算法,证明了相对于树和单径路由、多径路由资源预留的优越性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.