基于小波域热红外降质图像滤波增强方法研究

随着现代网络传输和视频通信技术的快速发展,大大拓宽了热红外图像的应用领域。提出了一种基于小波变换的热红外将质图像滤波增强方法。该方法以受到不同强度高斯白噪声和脉冲噪声构成的混合噪声模型的热红外降质图像为研究对象,首先对其进行二维小波变换,从而获得高频和低频小波分解系数;鉴于低频小波分解系数包含图像大部分信息,基本不受噪声干扰的特点,引入直方图均衡化法进行增强处理,以改善图像低频信息的对比度;根据各方向的小波高频分解系数中噪声的分布特征,对经典数学形态学滤波算法进行研究,分别设计出几类多尺度多方向的结构元素,实现对各高频小波分解系数中噪声的三级串联滤波处理,在此基础上进行自适应同态滤波增强,以最大限度改善滤波后图像质量。最后进行小波分解系数重构。实验结果表明,该算法对于热红外将质图像的处理效果优于单纯进行经典数学形态学滤波和已有的改进数学形态学滤波,为该类降质图像的滤波增强处理提供了一条可供借鉴的思路。     

一种基于数学形态学与小波域增强的滤波算法

为了有效滤除图像高斯噪声,将数学形态学与小波域增强相结合,提出了一种高斯噪声新型滤波算法.该算法首先将噪声图像进行二维小波分解,得到低频和高频子图像;然后保留低频子图像不变,对各高频子图像根据其噪声分布特点分别设计出多角度、多结构逐级形态学滤波器进行滤波处理,并进行小波分解系数重构;最后对经过形态学滤波后的图像进行2层小波分解,通过设计出一种新型小波增强函数对不同幅值的小波系数进行不同程度的收缩处理,在此基础上进行分解系数重构.将自适应中值滤波与数学形态学滤波与本文算法进行比较,实验证明本文滤波算法其去噪效果优于前两种算法.     

基于提升小波变换的超混沌图像加密方案

研究了一种基于提升小波变换与二维超混沌系统的图像加密方案.首先将图像进行整数提升小波变换,根据自适应排列置乱算法对提升小波变换后的低频子带系数进行调整置乱.然后由两个二维超混沌系统生成混沌序列并进行预处理,同时构造双混合反馈系统.最后利用双混合反馈系统对小波重构后的图像进行像素灰度值替代加密.仿真结果表明,该加密方案弥补了图像经传统小波变换后不能无失真重构的缺陷,并克服了单一的低维混沌系统保密性不高的缺点,在密钥空间和抵抗各种攻击方法上均有较好的改进,具有较高的安全性和实用性.     

基于小波变换的图像混合噪声自适应滤波算法

提出了一种基于小波变换的图像混合噪声自适应滤波算法.该算法首先采用中值滤波进行预处理以去除脉冲噪声,然后对图像进行二维小波分解得到高频和低频子图像.根据各高频子图像噪声分布特征,分别设计出新的结构元素进行形态学滤波,随后定义一种新型阂值判别函数对高频和低频子图像分别设定不同调节参数,以进一步滤除残余噪声.最后进行小波系数重构.仿真结果表明,该算法去噪效果明显优于其他几种算法,从而表明该算法是一种较为有效的图像混合噪声滤除方法.     

基于粒子群优化的Otsu肺组织分割算法

为减少肺组织分割算法的运算时间,提出了一种基于粒子群优化的Otsu肺组织改进自动分割算法。针对传统粒子群优化的二维Otsu算法中二维直方图计算量大、粒子搜索容易陷入局部最优解的缺陷,使用灰度级-梯度二维直方图减少二维直方图的计算量,并减小粒子搜索范围,采用基于粒子空间对称分布的改进粒子群获取最佳阈值。算法实现过程中利用孔洞填充算法去除背景,基于形态学操作去除噪声、修补病变区域产生的孔洞。仿真实验结果显示,本文算法对图像尺寸为512像素×512像素CT图像的阈值分割时间约为0.2s,比基于灰度级-邻域均值二维直方图的粒子群优化的Otsu算法的阈值分割速度提高了约16%。较好地实现了胸腔CT图像的肺组织自动分割,与传统算法相比较,本算法在保证分割精度的基础上分割速度明显提升。     

灰度图像的二维Otsu曲线阈值分割法

Otsu法是一个常用的阈值分割方法.为了利用图像的区域信息,本文在二维Otsu法的基础上提出了曲线阈值型Otsu法,传统的二维Otsu法可以看成是该方法的一个特例.实验结果表明,对于含噪图像,它能够获得优于传统二维Otsu法的分割效果.为了减少计算量,提高分割速度,给出了一种递归算法和一种小波变换与递归算法相结合的快速算法.该递推算法只需遍历二维直方图的主对角线和一条次主对角线,与传统Otsu法的递推算法相比,搜索空间由L×L个点减少到2L-1个点.     

基于模糊判决改进的Otsu图像分割算法

在图像分割中,阈值的选取是十分重要的.提出了一种基于模糊判决的Otsu图像分割算法,通过对Otsu算法中阈值的模糊判决处理,采用重心法来求取阈值,使所求阈值更加接近实际最佳阈值,从而能更好地分割图像.实验结果表明,与当前的一维Otsu算法和二维Otsu算法相比,改进算法有着更好的图像分割效果.     

基于属性直方图的快速Otsu红外目标检测算法

为了提高红外小目标检测的有效性和实时性,提出了一种改进的二维Otsu算法。该算法运用了属性直方图的概念,通过构造适合红外小目标图像特性的属性集,来确定Otsu算法的最佳分割阈值。为了减小计算复杂度,从推导递推关系式和缩小搜索范围两方面,给出了快速算法。在数学形态学Top-Hat变换对原始红外图像进行背景抑制的基础上,利用本文提出的改进算法在含有噪声的背景抑制图中分割出候选的目标点,并和其他目标分割方法进行比较,实验结果证明了这种方法的抗干扰性更好、时效性更高。     

基于不可分加性小波与形态学梯度的图像边缘提取方法

针对传统的图像边缘提取方法只强调图像中的水平和垂直边缘的不足,提出了一种基于不可分加性小波和形态学梯度相结合的图像边缘提取方法。根据二维不可分小波理论构造了低通滤波器,利用它对原图像进行加性小波多尺度分解;对低频子图像求形态学梯度,对增强后的高频子图像取模极大值;将所得梯度图与边缘图作加性小波逆变换,得重构后的边缘梯度图;并利用二值形态学方法对其进行处理,得最终结果边缘图。实验结果表明,本文算法可获得较好的边缘图像,与经典的边缘提取方法相比,该方法具有完整性、多方向性、平移不变性和快速性的特点。     

基于频域增强和差分盒维数的早期火灾烟雾图像分割

根据烟雾的半透明性特征和分形性质,提出一种基于频域增强和差分盒维数的烟雾图像分割算法。首先,利用小波变换空-频域的特性,通过对图像多层分解后小波系数的加权处理得到烟雾纹理增强图像;然后,运用差分盒维数方法遍历图像,计算出各像素分形维数值,由阈值法得到烟雾分割图像。最后,通过形态学膨胀运算使分割图像更加完整。实验结果表明,该算法能有效利用小波频域增强的特点,减小烟雾薄弱区内背景的影响,使该区域烟雾的分形维数更多地集中于阈值内,提高了烟雾分割的准确性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.