基于故障物理的电子产品可靠性仿真分析方法

基于故障物理的电子产品可靠性仿真分析方法首先对产品进行故障模式、机理与影响分析（FMMEA）,得到所有潜在故障点的故障模式、机理与对应的物理模型.利用产品材料、结构、工艺、应力等参数建立产品的仿真数字模型,并进行应力分析,利用概率故障物理（PPoF）模型进行损伤分析,得到各潜在故障的寿命分布.最后利用时间竞争的原理对其进行数据融合,得到产品故障率、平均故障间隔时间（MTBF）等可靠性指标.通过某型单板计算机的可靠性仿真过程说明了该方法的实施流程.这种基于故障物理的可靠性仿真的方法从微观角度将可靠性与产品的结构、材料及所承受的应力联系在一起,有助于发现产品的薄弱环节并采取切实有效的措施,是目前基于手册数据的可靠性预计方法的有益补充.     

电子产品可靠性评价与物理模型应用探讨

该文以电子产品的故障为出发点,从集成电路-封装、集成电路-芯片、电路板(或线路板)、电子元件、系统和多系统的角度论述了不同任务环境下电子器件的故障机理特点。系统论述了故障模式、影响及危害性分析(FMECA)和故障模式、机理与影响分析(FMMEA)两种故障机理分析方法,同时结合低周疲劳、高周疲劳、裂纹萌生、反应论模型、芯片失效等失效机理对故障物理元模型进行分类讨论,对电子产品可靠性评价与物理模型应用进行了系统的探讨,为电子产品可靠性评价及失效物理评估模型的选取提供了依据。     

基于失效物理方法的焊点疲劳寿命评价流程设计

应用失效物理方法的故障预测与寿命评价方法已经得到了越来越广泛的应用,该文主要介绍了基于失效物理方法的焊点疲劳寿命评价流程设计。首先给出了单板焊点疲劳寿命评价的完整流程,以及各失效物理模型的应用阶段,并且对所应用的失效物理模型详细说明了其适用条件,以及其应用时的输入输出参数。为单板焊点疲劳寿命评价和可靠性设计及评价提供参考。     

温度与振动耦合条件下的电路板级焊点失效模式与疲劳寿命分析

基于正交试验法研究不同温度与振动耦合条件下的板级焊点失效行为与模式,采用L₉（34）混合水平正交表设计了不同温度（T）、加速度功率谱密度（PSD）与频率（V）条件下的加速寿命试验,结果表明三者对焊点可靠性影响程度为T>PSD>V,且温度是影响焊点失效模式的主要因素,随温度的升高,焊点裂纹逐渐从近封装侧的界面金属化合物（IMC）层向钎体内部扩展,焊点失效模式从脆性断裂向韧性断裂演化.基于焊点失效数据分析,发现焊点疲劳寿命对数值与PCB板背侧最大应变范围存在关联关系,并采用多项式拟合的方法建立了焊点疲劳寿命模型,拟合结果显示,该模型能较好的评估温度与振动耦合条件下的焊点寿命,预测精度较高.     

低银无铅微互连焊点的振动疲劳行为研究

通过采用一系列与集成电路BGA(球栅阵列)、Flip Chip(倒装焊芯片)真实焊点体积接近的不同尺寸的典型“三明治”结构Sn0.3Ag0.7Cu低银无铅微互连焊点,基于动态力学分析的精密振动疲劳试验与微焊点疲劳断口形貌观察相结合的方法,研究了微焊点振动疲劳变形曲线的形成机制、裂纹萌生扩展与断裂机理、温度对振动疲劳行为的影响及微焊点振动疲劳行为的尺寸效应问题。结果表明,保持焊点直径恒定,随着焊点高度的减小,焊点的疲劳寿命增加,而疲劳断裂应变降低,同时焊点的疲劳断裂模式由韧性断裂转变为脆性断裂。     

电子装备环境试验故障影响因素分析

对不同的环境应力(温度循环、高温、低温、振动和湿度)下,电子装备产品环境试验故障影响因素进行了分析。同时对引起故障的机理进行了分析探讨。归纳了不同的应力暴露出的故障模式,对电子装备产品暴露出的一些故障情况进行了统计分析,并根据统计分析结果提出了改进可靠性试验方法的建议。     

随机振动下不同结构参数的PCBA可靠性研究

为减小振动因素对产品失效的影响,改进PCBA组件的结构参数,提高PBGA(塑料球栅阵列)振动可靠性。采用有限元法,运用模态分析,得出结论:固支数目越多,焊点的振动可靠性越好。此外,利用随机振动模块,分析了板级振动条件下,焊点位置、焊点材料、PCB厚度、BGA焊点高度对可靠性的影响,并且利用焊点的疲劳寿命模型计算出关键焊点的疲劳寿命。结果表明:焊点最容易失效的位置位于焊点的顶角处;相比于Pb90Sn10、Sn63Pb37、Mix、SAC387这四种材料,SAC305的疲劳寿命最高;PCB的厚度和焊点的疲劳寿命成正比;焊点高度和焊点的疲劳寿命成反比。     

Pb90Sn10焊点硅基器件与PCB板组装的温循可靠性研究

采用有限元仿真和实验两者相结合的方法,对-40～70℃使用环境下的Pb₉₀Sn₁₀焊点硅基器件与PCB板组装的组件,选择-55～85℃温度循环条件进行可靠性分析和研究。Anand模型仿真分析焊点在温循下应力应变行为,提取模型焊点在最后一个温度循环结束时的等效塑性应变分布并进行分析,确定最易发生热疲劳失效的关键焊点和关键位置。基于Coffin-Manson方程对热循环条件下焊点的服役寿命和失效模式进行预测。仿真结果表明焊点失效机理为热疲劳失效,失效模式为焊点开裂,失效循环周期为3 984 cycles。实验表明：温度循环500次,未出现焊点裂纹、空洞等缺陷;温度循环2 000次后焊点形貌由球形变为椭球形,焊点未出现明显缺陷。     

基于FMMEA方法的雷达液压升降系统分析

液压升降系统是执行雷达快速架撤功能的重要组成部分,然而其故障率相对较高.采用FMMEA方法对某雷达的液压升降系统进行了分析.结果表明,在液压升降系统中,故障模式影响的严酷度以Ⅱ级为主,说明系统故障风险较高.系统故障主要是由耗损型机理引起的,磨损和疲劳引起的故障分别占48%和26%.油泵电机轴承卡滞、 油缸密封圈损坏和液力锁内泄漏为危害性最大的故障模式.最后,根据分析结果提出了故障防治策略.     

可靠性强化试验在显示器上的应用

首先,对诱发显示器故障模式的主要环境因素进行了分析,确定了影响显示器的可靠性的敏感环境应力;其次,以某型显示器为研究对象,通过设计试验剖面,制定了相应的可靠性强化试验方案,并进行了实际应用;然后,在试验实施的过程中成功地将产品的缺陷激发为了可被检测的故障,有效地发现了产品设计的薄弱环节;最后,通过分析其故障模式和失效机理,提出了有效的改进措施,提高了产品的健壮性和可靠性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.