边界的快速跟踪算法和硬件实现

本文研究了一种快速跟踪二值图边界的方法，该方法采用２×２的跟踪窗口，能将连通区的所有边界（包括连通区内部空洞的边界）全提取出来，以图像方式和链码方式输出。为提高速度，在软件模拟成功后，我们更以硬件加以实现。用若干图像进行处理的结果表明，对于多数大小为５１２×５１２的复杂景物图像，由硬件提取一幅图中边界的时间在４０ｍｓ以内，符合电视帧速率的实时图像处理要求     

条纹图象的细化算法研究

本文针对条纹图象的两种细化算法进行了研究，并加以发展．其中，基于数学形态学原理的细化算法具有运算结构简便的特点，有利于硬件实现．小窗口细化算法采用了简化有效的逻辑规则，并采用堆栈技术使处理速度得到了很大的提高．同时，本文对单象素化图象豁口的连接也提供了一种简便可行的方法。实验结果表明，上述方法在处理速度及处理效果上都是令人满意和可实用的。     

基于矩的异分辨率图象边界检测

（１）本文引入仿射变换，提出了一种用矩算子以民分辨率图象直接进行边界检测的方法，利用同分辨率图象正方形窗口的模板行矩的计算，推导出了相应用的边界参数公式。（２）本文提出一种隐线笥插值矩计算方法，得到一组与正方形窗口对应的正方形模板，避免了费时的预插值过程，（３）对本文提出的方法进行了实验验证，并给出了实验结果。     

低信噪比图象边缘提取的非线性方法

针对低信噪比图象的边缘提取问题,本文提出了一种非线性方法,即利用大窗口平滑去噪性能强与小窗口提取边缘性能好相结合的方法,此时采取大窗口滤波,小窗口中作非线性的微分算子求导。为了避免求导后阈值选取的盲目性,文中提出了一种噪声引导的阈值确定准则,并根据这个阈值分割图象。在大窗口滤波中,采用了二维卷积等于两个一维卷积级联的技术压缩滤波器的存储空间。最后对这种方法进行了性能评价,并且给出了实验结果。     

基于DFBIR场的图像边缘提取的一种新方法

自然纹理的灰度图象是满足分数布朗随机场模型的．本文采用改进了的分形图象模型，即离散分数布朗增量随机场[2]（discretefractionalBrownianincrementalrandomfield，简记为DFBIR场）模型，通过求取图象局部分形特性参数H值，来提取图象的边缘。并且提出了一种有效确定分形特征参数H值二值化门限的新方法，采用该方法可以获取好的图象边缘．     

实时数字图象压缩系统

美国Loral Conic公司研制的VCS-500是一个实时数字图象传输系统,可以改善现有的视频链路,能够在战时进行可靠的保密图象传输,同时还可以增大传输距离。该系统的分辨率为512×512,数据速率从1.1Mbps到8.8Mbps。该系统由数据压缩装置(DCU)     

球形物料图像的分割方法研究

本文以水泥窑生料球为背景，分析了球形物料图像在灰度空间和梯度空间的特征，对一些经典算法进行了颗粒分割实验，理论分析和实验结果表明，利用局部特征值进行总体像素归属判决将使颗粒图像的边界不连续，或边界描述失真。为此提出的一种由局部特征值直接提取球形物料边界的图象分割方法。实验结果表明，该算法分割的图像边界封闭性好，边界描述真实，适合球形物料图像的分割。     

基于梯度能量函数的调焦窗口构建方法

光电跟踪取证系统对运动目标进行跟踪拍摄时需要进行变焦和调焦,目标姿态和位置改变而产生调焦窗口偏离是导致传统自动调焦方法失效的主要原因。针对该问题,提出了一种针对跟踪目标动态建立调焦窗口的方法。该方法利用梯度能量评价函数提取目标特征,通过相关性处理和边界扩展建立调焦窗口,能克服调焦窗口偏离的缺陷。实验结果证明,对704×576像元不同离焦状态的图像都可以在20 ms内根据目标的位置和大小,构建准确有效的调焦窗口,满足光电跟踪取证系统对运动目标进行实时自动调焦的特殊要求。     

嵌入式大屏幕LED显示屏的设计与实现

鉴于传统的LED显示规模小、可靠性差、需要上位机实时控制的问题,提出一种基于FPGA和2片SRAM的嵌入式大屏幕LED显示的方法,其显示规模达到512×512点阵列,并且可以在完全不需要上位机控制的情况下实时独立的工作。本设计已经实际使用在现场厂房中,能够较好地对厂房中的生产情况进行实时显示。着重讨论该系统最底层的硬件连接及相应的软件设计,并给出其软、硬件实现。     

USB2.0技术在数据采集传输系统中的应用设计

介绍了一种高速实时数据采集处理系统中的USB2．0接口的硬件、固件设计方案以及其驱动的实现。该系统采用ADSP-2188M数字信号处理器和ISP1581 USB2．0设备接口芯片来实现系统与PC机之间的高速串行数据传输，提出了一种使用多芯片开发符合USB2．0规范的外设端通用数据传输模块的方法。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.