共查询到20条相似文献,搜索用时 109 毫秒
1.
2.
用于空间系统的电子元器件和电路性能受辐照累积剂量的严重影响。本文针对一种Buck型小功率DC/DC模块电源进行了电离辐照实验,研究结果表明:随着辐照剂量的增加,该类器件输出电压增大,输入电流增大和整体转换效率降低,且加偏辐照DC/DC模块电源更早出现上述参数退化,其低频噪声参量呈现出与电参数相似但幅度更大的退化趋势。进一步的研究结果表明,其内部的功率MOSFET辐照引起的阈值电压漂移是导致该类电源辐照后输出电压增加的主要原因。本文研究结果可为该类器件的抗辐照性能加固提供实验基础。 相似文献
3.
4.
5.
通过对用于DC/DC转换器的N型和P型VDMOS器件在^60Coy射线下的辐照实验,研究了不同封装VDMOS器件在不同偏置条件下辐照前后的电参数和低频噪声变化。实验表明:辐照前后该类器件的低频噪声主要表现为1/f噪声,随着辐照剂量的增加,其幅值明显增加,阈值电压发生负向漂移,但前者的变化比后者大1~2个数量级。基于上述实验结果,进一步的理论分析认为:P型VDMOS器件比N型VDMOS器件更适合空间应用。 相似文献
6.
7.
为进行10 keV X射线和60Co γ射线总剂量辐射效应的比较,采用这两种辐射源对SOI (Silicon-on-Insulator) n-MOSFET在不同偏置条件下进行总剂量辐照试验,分析了SOI NMOS器件在两种辐射源下辐照前后的阈值电压的漂移值并进行比较.实验结果表明,SOI NMOS器件的前栅特性中X射线与60Co γ射线辐照感生阈值电压漂移值的比值α随总剂量增加而增大,而背栅特性中α值在不同偏置条件下变化趋势是不同的;在总剂量为1×106 rad(Si)时,前栅器件α值为0.6~0.75,背栅器件α值为0.76~1.0. 相似文献
8.
9.
研究了用注入掩埋氧化物的绝缘体上的硅(SOI)作衬底、并经不同的注入后退火处理而制作的CMOS器件的总剂量特性。所测量到的正面沟道SOI/CMOS器件的阈值电压漂移、亚阈值电压斜率衰减和迁移率衰减情况,与采用相同办法制作的体器件的这些参数的变化情况是一样的。 只要不影响正沟道晶体管性能,加负衬偏可降低背面沟道的阈值电压漂移。在目前采用的工艺条件下,正沟道器件的辐照性能与注入氧后的退火温度无关。辐照时,在硅/隐埋氧化物界面上氧的沉积会促进背沟器件界面态的产生。 相似文献
10.
聚焦离子束(Focusedionbeam)系统现在被广泛应用于大规模集成电路的修补中,FIB辐照对器件性能的影响受到广泛的关注。研究了两种栅尺寸的NMOS晶体管(20μm×20μm和20μm×0.8μm)在不同辐射剂量作用下的阈值电压变化情况,发现在辐射后的阈值电压都发生了明显的漂移,辐照后的晶体管阈值电压在室温环境下静置数日后有约30%的恢复,而在退火条件下阈值电压几乎完全恢复。文中从理论上对电离辐射引起阈值电压的漂移予以解释,使实际的电路修补工作最优化,从而确保器件在修补后的可靠性。 相似文献
11.
The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metal‐oxide semiconductor field‐effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the on‐resistance for two kinds of MOSFETs (200 V and 100 V of VDSS) are tested for γ‐irradiation and compared with the electrical specifications under the pre‐ and post‐irradiation low dose rates of 4.97 and 9.55 rad/s as well as at a maximum total dose of 30 krad. In our experiment, the γ‐radiation facility using a low dose, available at Korea Atomic Energy Research Institute (KAERI), has been applied on two commercially available International Rectifier (IR) products, IRFP250 and IRF540. 相似文献
12.
N. Stojadinovic I. Manic S. Djoric-Veljkovic V. Davidovic S. Golubovic S. Dimitrijev 《Microelectronics Reliability》2002,42(4-5)
The effects of pre-irradiation high electric field and elevated-temperature bias stressing on radiation response of power VDMOSFETs have been investigated. Compared to unstressed devices, larger irradiation induced threshold voltage shift and mobility reduction in high electric field stressed devices have been observed, clearly demonstrating inapplicability of electrical stressing for radiation hardening of power MOSFETs. On the other hand, larger irradiation induced threshold voltage shift in elevated-temperature bias stressed, and more considerable mobility reduction in unstressed devices have been observed, confirming the necessity of performing the radiation qualification testing after the reliability screening of these devices. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects. 相似文献
13.
在新材料SIMOX上制作CMOS器件,并采用静态I-V技术,研究了CMOS/SIMOX在(60)Co-γ电离辐照场中辐照感生界面态、氧化物正电荷、阈值电压、静态漏电流等参数的变化。结果表明,在辐照过程中,氧化物正电荷增加较多,界面态增加较少,且NMOS和PMOS"导通"辐照偏置是最恶劣偏置。 相似文献
14.
介绍了采用全剂量SIMOX SOI材料制备的0.8μm SOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5μA. 相似文献
15.
16.
The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention. 相似文献
17.
首先建立了应变SiGe沟道PMOSFET的一维阈值电压模型,在此基础上,通过考虑沟道横向电场的影响,将其扩展到适用于短沟道的准二维阈值电压模型,与二维数值模拟结果呈现出好的符合。利用此模型,模拟分析了各结构参数对器件阈值电压的影响,并简要讨论了无Sicap层器件的阈值电压。 相似文献
18.
A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported.The characteristics of both devices are observed as varying the oxide thickness.Thereafter,we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device.After simulation on the HSPICE tool,we observed that the high threshold voltage can be achieved at a low chiral vector pair.It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small.After that,we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices.We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect.It is observed that at below the 10 nm channel length,the threshold voltage is increased rapidly in the case of the CNTFET device,whereas in the case of the MOSFET device,the threshold voltage decreases drastically. 相似文献
19.
对基于全耗尽绝缘体上硅(FDSOI)的隧穿场效应晶体管(TFET)器件和金属氧化物半导体场效应晶体管(MOSFET)器件进行了总剂量(TID)效应仿真,基于两种器件不同的工作原理,研究了总剂量效应对两种器件造成的电学影响,分析了辐照前后TFET和MOSFET的能带结构、载流子密度等关键因素的变化。仿真结果表明:两种器件在受到较大辐射剂量时(1 Mrad (Si)),TFET受辐射引起的固定电荷影响较小,仍能保持较好的开关特性、稳定的阈值电压;而MOSFET则受固定电荷的影响较大,出现了背部导电沟道,其关态电流增加了几个数量级,开关特性发生了严重退化,阈值电压也严重地向负电压偏移。此外,TFET的开态电流会随着辐照剂量的增加而减小,这与MOSFET的表现恰好相反。因此TFET比MOSFET有更好的抗总剂量效应能力。 相似文献
20.
采用CoSi2 SALICIDE结构CMOS/SOI器件辐照特性的实验研究 总被引:2,自引:0,他引:2
讨论了CoSi2SALICIDE结构对CMOS/SOI器件和电路抗γ射线总剂量辐照特性的影响。通过与多晶硅栅器件对比进行的大量辐照实验表明,CoSi2SALICIDE结构不仅可以降低CMOS/SOI电路的源漏寄生串联电阻和局域互连电阻,而且对SOI器件的抗辐照特性也有明显的改进作用。 相似文献