全业务电信运营商的IT服务管理实践探讨

本文分析了全业务电信运营商的IT服务管理面临的挑战,介绍了业界IT服务管理标准ITIL,提出了如何以ITIL为参考构建IT服务管理体系架构的主体内容,最后阐述了IT服务管理实施的方法与步骤。     

信息系统运维服务管理探讨

本文通过对南车资阳机车有限公司(以下简称公司)现有IT信息系统运维管理现状的研究,结合ISO2000~1《IT信息技术服务管理体系标准》以及IT IL~2基础框架结构,从事件管理、问题管理、变更管理、服务台等方面探讨公司信息系统运维服务管理的解决方法和思路,并提出公司信息系统运维管理解决方案。     

基于软件开发企业的IT月艮务规划及ITSM系统设计

国内IT企业（特别是软件开发企业）应用ITSM提高服务质量和市场竞争能力,仍然缺乏具有实际参考价值的成功案例。广东中望软件公司通过IT服务规划与实施项目,研究如何在软件开发企业中应用ITSM和ITIL最佳实践,提出了进行IT服务规划与实施的基本方法和应用模式,将IT服务规划的方法概括为PPMT模型,即对流程、组织、管理、工具四个方面进行设计,并将实施IT服务规划的策略概括为“管理分步、功能分期、观念重建、持续改进”,在IT服务管理成熟后,可将其他产品和业务整合到统一的IT服务管理体系中,最终实现“以服务为中心”的运营模式。     

浅谈视频IP传输的业务管理

服务管理是一种高层次的管理方法,能够高效分配和管理视频IP资源,进行方便的调度,从而实现对视频服务的优化。简要介绍基于IP网络进行视频传输业务管理的方法,基于此种方法构建的数字视频前端系统具有灵活、简便等优点。     

基于可用性分解结构的IT系统量化管理方法

IT系统的可用性是衡量其服务水平的重要指标,行业内应用ITIL等先进管理方法已经实现了成熟的定性管理,但在定量管理尤其是对于IT系统整体可用性的量化管理上,尚没有行之有效的方案,这主要是由于IT系统的非标准化导致量化管理难度较大。笔者提出一种量化管理方法,即通过创建IT系统的可用性分解结构,将整体可用性分解为标准的、容易测量的组件级可用性,并加以统计利用,达到完善可用性管理,提升服务水平和客户满意度的目的。     

面向服务的网络管理机制的建模方法

针对目前以面向对象的方法描述的网络管理机制仅仅关注管理操作细节的局限性,该文提出以服务的概念建模网络管理机制,扩展了对操作机制的商务过程特性、流程和策略等方面内容的描述能力。首先,通过建立网络管理功能、商务过程元素以及网络管理服务三者间的对应关系,使网络管理服务兼具操作细节和商务过程两方面的内容。然后,提出了包括服务接口、信息、语义、流程和策略的网络管理服务描述内容以及一种自顶向下和自底向上相结合的网络管理服务分析过程,并进行了举例说明。以面向服务的方法描述网络管理操作机制,符合面向客户和商务过程的电信运营策略,支持自动和灵活的运营过程,并可以有效指导网络管理及运营支撑系统的分析、设计、实施和集成。     

CMMB运维管理思路的探讨

CMMB系统自2008年奥运会正式投入营运以来,发展迅速,先后同中国移动集团和几大汽车集团形成战略合作伙伴,在众多领域扩展了大批用户群。CMMB系统商用之后,运营商如何保障持续提供安全优质的服务,成为运维工作的重大课题。本文从当前运维管理工作碰到的问题出发,结合当前运维管理的科学方法,对运维管理的思路进行了剖析,提出了CMMB运维管理思路的重点、方法和方向,并从面向客户服务的视角,探析了运维职责,人员培训,运维流程和服务管理等。     

初探电信业营业厅转型期的服务质量管理模式

文章根据潮州移动在建设营业厅服务质量的管理措施实践案例,探讨了如何应用科学的管理方法去管理营业厅服务质量,有效提升客户口碑,树立移动公司的优秀服务商形象。     

基于软件网络的服务自动分类和推荐方法

对于服务管理与组合来说,服务分类和推荐方法至关重要,本文提出了SOS与服务自动分类方法,探讨了服务推荐方法的实现,并对其应用和平台工具开发进行了实例分析,旨在为相关研究和实践提供参考。     

网络管理服务行为建模与实现

基于服务的软件开发方法,围绕网络管理服务系统形式化建模,通过对网管服务活动建模,实现了一个基于服务的网络管理系统。提出的网络管理服务系统建模方法可以较好的实现服务行为分析,确保系统的安全性、可靠性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.