一种用于超高频RFID阅读器的正交下变频混频器的分析与设计

分析了共用跨导级的正交下变频混频器的性能,包括电压转换增益、线性度、噪声系数和镜象抑制比,分析表明其在电流开关模式下比传统的Gilbert混频器对具有更好的性能.设计并优化了一个基于共用跨导级结构的用于超高频RFID阅读器的正交下变频混频器.在915MHz频段上,该混频器测得12.5dB的转换增益,10dBm的IIP3 ,58dBm的IIP2和17.6dB的SSB噪声系数.芯片采用0.18μm 1P6M RF CMOS工艺实现,在1.8V的电源电压下仅消耗3mA电流.     

一种用于超高频RFID阅读器的正交下变频混频器的分析与设计

分析了共用跨导级的正交下变频混频器的性能,包括电压转换增益、线性度、噪声系数和镜象抑制比,分析表明其在电流开关模式下比传统的Gilbert混频器对具有更好的性能.设计并优化了一个基于共用跨导级结构的用于超高频RFID阅读器的正交下变频混频器.在915MHz频段上,该混频器测得12.5dB的转换增益,10dBm的ⅡP3,58dBm的ⅡP2和17.6dB的SSB噪声系数.芯片采用0.18μm 1P6M RF CMOS工艺实现,在1.8V的电源电压下仅消耗3mA电流.     

基于802.11a标准的CMOS正交调制器和上变频器

采用0.18μm CMOS工艺,设计并实现了应用于WLAN IEEE 802.11a的正交调制器和上变频器.正交调制器在传统的Gilbert单元基础上,采用负反馈跨导放大器来提高线性度;上变频器采用LC谐振网络作混频器负载来提高增益和电压输出摆幅.测试结果表明,在1.8V电源电压下,谐振频率点的1dB压缩点P1dB为-3.6dBm,功率转换增益为-3.6dB,电流消耗大约45.8mA.     

基于802.11a标准的CMOS正交调制器和上变频器

采用0.18μm CMOS工艺,设计并实现了应用于WLAN IEEE 802.11a的正交调制器和上变频器.正交调制器在传统的Gilbert单元基础上,采用负反馈跨导放大器来提高线性度;上变频器采用LC谐振网络作混频器负载来提高增益和电压输出摆幅.测试结果表明,在1.8V电源电压下,谐振频率点的1dB压缩点P1dB为-3.6dBm,功率转换增益为-3.6dB,电流消耗大约45.8mA.     

高线性度的CMOS下变频混频器的设计

采用正交反馈的跨导级设计了一种基于数字电视调谐芯片中的高线性度的下变频混频器,该混频器在3.3V的工作电压下,采用改进的Gilbert单元,使用基于Chartered0.25μm标准CMOS工艺进行流片测试,结果表明该混频器IIP3可达到15dBm,增益达到9dB。     

应用于2.45GHz 半有源标签的低中频正交混频器*

设计了一款用于2.45GHz半有源标签的低中频正交下变频混频器。该混频器采用UMC 0.18μm标准CMOS技术设计和流片,改进了经典的Gilbert结构,并分别采用共跨导正交结构、电流注入结构和正交跨导结构来提高增益、减小噪声和改善线性度。测试结果表明,论文设计的混频器在1.8V工作电压下消耗电流2.25m A,增益是15d B,三阶交调点为2d Bm,在2MHz中频下的噪声系数是14.8d B,所占面积为1.024mm×1.096mm。     

2.45 GHz有源标签接收机中的下变频混频器

设计了一种用于2.45 GHz有源标签接收机的低中频正交下变频混频器。改进了传统的吉尔伯特结构, 采用了共享跨导正交结构和电流注入技术, 以提高混频器的增益, 减小混频器的噪声。该混频器采用UMC 0.18 μm CMOS工艺设计。仿真结果表明, 该混频器在1.8 V电压下, 电流消耗为3.1 mA, 转换增益为17.18 dB, 输入1 dB压缩点Pin-1dB与输入3阶截点IIP3分别为-13.5 dBm, -3.23 dBm, 在2 MHz中频下的噪声系数为14 dB。     

0.18μm CMOS高线性低噪声混频器设计

采用标准0.18μｍ CMOS工艺,设计了一种应用于超外差接收机的高线性度、低噪声系数下变频混频器,基于经典基尔伯特混频器架构,该混频器采用共栅结构跨导级提高线性度,引入电容交叉耦合技术增加跨导增益及降低噪声系数,并通过电流注入技术同时降低开关级和跨导级的噪声贡献,在1.8V电源电压下,后仿真结果显示,该混频器消耗功耗12ｍＷ,取得噪声系数10.75ｄＢ,输入1ｄＢ压缩点1.45ｄＢｍ.达到了预期的高线性度、低噪声系数性能要求。该混频器占用面积为650μｍ× 655μｍ。     

1.2V高线性度低噪声折叠混频器设计

设计一种工作在1.2 V低电源电压下的折叠混频器。混频器电路采用折叠结构和电流复用技术,降低电源电压,减小直流功耗,降低噪声、提高增益和线性度。跨导级采用交流耦合互补跨导进一步降低电源电压。混频器设计基于SMIC0.18μm标准CMOS工艺。仿真结果表明:输入射频频率和输出中频频率为2.5 GHz和100 MHz时,IIP3为3.857 dBm,NF为5.257 dB,转换增益为9.787 dB,功耗为5.22 mW。     

一种用于76-81 GHz汽车雷达的CMOS毫米波下混频器

设计了一款用于76～81 GHz汽车雷达的CMOS毫米波正交下混频器,该混频器由前置放大、有源正交混频两部分构成。在前置放大器中,采用基于变压器的跨导增强技术改善了增益。在有源正交下混频器中,使用并联电感谐振结合交叉耦合管动态电流注入技术,消除跨导管与开关管之间的寄生电容,降低混频器噪声、提高转换增益。芯片采用55-nm CMOS工艺制造,测试结果表明,该下混频器3dB带宽为5.5 GHz,峰值转换增益4.1 dB,I/Q两路增益失配小于0.16 dB(50Ω负载条件),最小噪声系数19 dB,输入1dB压缩点-6 dBm,直流功耗40 mW,实现了优异的FOM值。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.