TD-SCDMA网络位置区规划方法探讨

本文在深入分析TD-SCDMA网络的寻呼过程、寻呼相关的参数设置、无线系统寻呼能力的基础上,借鉴GSM网络位置区(LAC)规划、优化经验,利用GSM话务统计,提出了基于时间、空间预测的聚类LAC规划方法.并从负荷控制、系统稳定性、无线网络性能等角度出发分析了TD-SCDMA LAC划分的基本原则.该方法还适用于对TD-SCDMA无线网络中LAC融合和分裂的优化,对TD-SCDMA无线网络的运营维护具有较强的参考价值.     

GSM网络LAC现状分析及解决方案

链路接入控制（LAC）代表一个位置区域,主要有以下两项功能一是在此区域内,网络发起对某个手机的呼叫．此区域内所有的基站都会进行寻呼,因此假如一个LAC涵盖的基站数过多,用户数过多,大量的寻呼将导致基站收发信台（BTS）寻呼负荷过载。二是手机进入一个新的LAC服务范围内,必须发起请求,更新归属位置寄存器（HLR）及访问位置寄存器（VLR）内的位置记录,因此网络的LAC数过多．会造成手机频繁的位置更新,浪费相应的信令资源。     

提升分组域寻呼成功率的优化实践

分组寻呼成功率指标直接影响使用感知。结合无线侧资源负荷情况,调整核心网SGSN（通用分组无线业务服务支持节点）中准备定时器、重寻呼次数、重寻呼响应定时器、重寻呼间隔递增等参数,并根据指标反馈,确定了针对不同无线资源配置场景的最优配置,实现分组寻呼成功率的大幅度提升。     

LAC区与寻呼关系浅析

LAC区用于标志不同的位置区域,随着网络的不断发展而进行LAC区的划分是必要的.LAC区的划分受寻呼次数的制约是很明显的.给出了寻呼原理、寻呼信令流程和寻呼参数设置,计算了在不同寻呼方式下的寻呼容量.结合现网情况分析了LAC区划分受寻呼制约的情况.根据话务模型给出了进行LAC区划分的合理方法.     

GSM网络LAC区规划及优化

LAC是位置区域码Location Area Code的英文缩写,是用来表明移动台寻呼位置的参数。良好的寻呼性能,即是否能正常寻呼到被叫收集,对于所有手机用户的感知度具有十分重要的意义。这份文档主要分析了GSM网络中LAC位置区的寻呼性能——寻呼成功率及承载能力,并提出了LAC规划和优化注意事项。     

TD-SCDMA与GSM核心网融合后LAC区规划原则

在TD-SCDMA网络与GSM网络共同组网的情况下,LAC(位置区)的合理划分可以提高2G/3G互操作成功率,缩短互操作时延。本文分析了共核心网、共LAC和共核心网、异LAC两种方式的各自寻呼容量,并总结了位置区边界划分的方法。     

GSM网位置区寻呼容量及其划分的研究

介绍了寻呼原理、寻呼信令流程和寻呼参数，探讨和计算了不同寻呼方式下位置区（LAC）的寻呼容量，并结合现网情况提出了LAC边界划分原则，给出了LAC设置和划分方法。     

GSM网络长途来电接通率之研究

介绍了GSM网络中影响长途来电接通率的相关因素。主要从网络拓扑结构、被叫用户关机状态、用户的位置区更新、寻呼方式以及A接口的信令平衡等这五个方面分析对接通率的影响,针对每一种影响因素,给出了相应的解决方案。对于网络位置区码（LAC）的作用及范围、边界的划分方法。建议解决好以上若干因素引起的影响,并根据信令跟踪的结果,有针对性的去改善网络质量,从而提升寻呼成功率及接通率。     

GSM无线寻呼成功率及其在现网的优化方案

文章重点分析了当前GSM网中无线寻呼存在的问题,详细分析了无线寻呼信令流程,结合巴中联通现网,从前期分析、寻呼信道拥塞、寻呼比例、寻呼时长、SDCCH拥塞掉话、TRH负荷、短信和位置更新等多角度提出了优化解决方案。     

TD-SCDMA的位置区规划

位置区（LAC）规划是无线网络规划的重要组成部分,直接影响到TD-SCDMA无线网络的稳定性、安全性和网络性能。分析了TD-SCDMA系统的寻呼能力,结合3G业务模型和网络配置情况,推导了LAC的理论载频配置,提出了网络成熟后的LAC规划的相关解决方案。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.