n-i-p型非晶硅太阳电池中p/ITO界面特性研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备n-i-p型非晶硅(a-Si)太阳电池,采用反应热蒸发法制备ITO薄膜作为太阳电池的前电极。通过改变B2H6的掺杂浓度获得了不同晶化率的p层,详细研究了p层性能对p/ITO界面特性以及电池性能的影响。结果表明,在合适晶化率的p层上沉积ITO薄膜有利于优化p/ITO界面的接触特性,将其应用于n-i-p型a-Si太阳电池,能够显著改善电池的开路电压(Voc)和填充因子(FF),最终,在不锈钢(SS)衬底上获得了转换效率为6.57%的单结a-Si太阳电池。     

聚3,4-乙撑二氧噻吩(PEDOT)-氧化石墨烯复合电极在有机发光二极管中的应用

通过将氧化石墨烯(Graphene Oxide,GO)与十二烷基苯磺酸钠(Sodium Dodecyl Benzene Sulfonate,SDBS)作为填料混入聚3,4-乙撑二氧噻吩∶聚苯乙烯磺酸(PEDOT∶PSS)溶液中制备了高透光率和低方块电阻的透明导电薄膜.当氧化石墨烯与PEDOT∶PSS质量比为0.02％时,薄膜获得了最佳的导电率,电阻为85 Ω/口,在550 nm的光波长下透光率为87％.采用不同掺杂比例的薄膜作为电极制备了有机发光二极管(OLED)器件,相比于常用的ITO电极,复合薄膜作为阳极更有利于空穴的注入和传输,所制备的器件能够得到更优的性能.这些结果表明PEDOT∶PSS和氧化石墨烯复合电极有望取代柔性OLED器件中的ITO阳极.     

低温制备柔性染料敏化太阳电池TiO_2薄膜电极

采用丝网印刷技术在柔性基底ITO/PET上制备TiO2多孔薄膜,经过低温烧结得到TiO2多孔薄膜电极。以D102染料为敏化剂,KI/I2为电解质,Pt电极为对电极,制成电池后测试了电池的光电性能。结果表明:以乙醇作为分散剂添加到P25粉体中,采用丝网印刷技术制膜,100℃低温烧结可以在柔性基底ITO/PET上制备出表面粗糙度良好、具有一定光电性能的TiO2多孔薄膜电极,用其制作的太阳电池转换效率达1.33%。     

接触电极功函数对反式锡基钙钛矿太阳能电池性能的影响

因反式锡基钙钛矿太阳能电池可避免J-V迟滞以及铅元素,基于SCAPS-1D设计结构为ITO/HTL/CH3NH3SnI3/PCBM/back-contact的反式锡基钙钛矿太阳能电池器件。其中NiO、Cu₂O以及P3HT分别作为空穴传输层,探讨导电玻璃ITO功函数在4.6~5.0 eV范围内电池性能的变化,并分析Al、Sn、Ag、Fe、Cu以及Au这6种材料作为背电极的电池器件的性能差异。由仿真结果可知,ITO功函数越高而背电极功函数越低,载流子的传输和收集受到促进,反式锡基钙钛矿太阳能电池性能更佳。另外,相比Cu₂O和P3HT,NiO是更适合该结构的空穴传输层材料。本文可为制备高性能反式锡基钙钛矿太阳能电池实验接触电极的选择提供一定的借鉴。     

利用ITO微纳结构提高石墨烯紫外LED光提取效率

为了改善因为铟锡氧化物(ITO)薄层对紫外光具有高吸收率,从而导致石墨烯紫外LED低光提取效率(LEE)问题,采用ITO微纳结构(矩形和三角形)作为石墨烯紫外LED缓冲层的方法,利用时域有限差分法,对ITO微纳结构进行优化,并对石墨烯紫外LED进行了理论分析。结果表明,当矩形微纳结构厚度为160nm、占空比为0.7、周期为220nm时,在单层石墨烯下紫外LED的LEE可达10.668%;利用矩形微结构作为插入层相比于利用ITO薄层作为插入层的单层石墨烯紫外LED提高了45.06%;而当三角微纳结构在最优参量时,石墨烯紫外LED的LEE仅有6.64%,明显低于ITO薄层石墨紫外LED。该研究可为后续制备高光功率的紫外LED提供理论基础。     

新型SINP硅光电池C-V/I-V特性及光谱响应的研究

在p型绒面晶硅上,采用磷的热扩散形成同质pn结、低温热氧化生长超薄SiO_2层、射频磁控溅射沉积ITO减反射/收集电极膜成功制备了一种新型ITO/SiO_2/np晶硅SINP结构光电池.高质量ITO薄膜的物相结构、光学及电学特性通过X-光衍射(XRD)、紫外-可见光透射、吸收谱(UV-VIS)以及霍尔效应(Hall effect)测量系统表征.并对新型SINP光电池C-V/I-V特性及光谱响应进行详细地分析、计算.结果表明,该器件在可见光波段具有光电转换增强的响应,适合于发展成为新型结构的太阳电池及光电探测器.     

电极材料对有机薄膜电致发光性能影响的研究

分别采用两种不同功函数的电子注入电极A1,Ca和三种不同功函数的空穴注入电极ITO,AZO(ZnO:A1),Au,制备出ITO/PPV/A1,Ca和ITO,AZO,Au/PPV/A1两个系列的电致发光器件.实验发现,采用不同的电极材料可使器件的J-V和B-V特性产生一定差异.我们还对其产生这种差异的原因进行了分析.     

石墨烯在超级电容器及电池领域应用进展

石墨烯因其高的比表面积、优异的导电性、高的电子迁移率和特殊的二维柔性结构,过去十余年在能源领域引发了极大的关注,电化学储能领域被认为是最有可能在短期内实现石墨烯规模应用的产业领域,特别是在超级电容器和电池领域。本文回顾了近年来石墨烯在超级电容器和电池中的应用,介绍了石墨烯导电剂和储能材料在超级电容器中的应用,以及石墨烯在锂电池电极材料和涂层铝箔中的应用。指出了目前石墨烯材料的品质和成本问题仍是严重制约它在储能领域规模化应用的核心要素。未来,迫切需要石墨烯全产业链的协调合作,推进石墨烯储能材料的研发、生产及应用。     

基于印刷双层电极的氧化物薄膜晶体管

为满足印刷显示的大面积制备、低信号延迟的需求,有必要开发应用于氧化物薄膜晶体管(TFTs)的低电阻印刷电极。研究发现喷墨打印Ag和氧化物有源层的界面接触特性较差,导致基于Ag电极的氧化物TFT性能很差。通过在Ag电极和有源层中间插入喷墨打印的氧化铟锡(ITO)电极,可以阻隔Ag纳米颗粒扩散入有源层。此外,ITO电极可以与Ag和有源层形成良好的接触特性,大幅降低了接触电阻。基于Ag/ITO双层电极的TFT较基于单层Ag电极的性能大幅提升:迁移率达16.0cm~2·V~(-1)·s~(-1),开关比达6.2×10~7,亚阈值摆幅为174mV/Decade,阈值电压为-2.0V。该结果证明了印刷Ag电极在氧化物TFT的应用潜力,并有助于建立导电氧化物薄膜和金属导电纳米材料堆叠结构的复合导电薄膜体系,实现优势互补。     

石墨烯超级电池产研合作项目落户佛山

<正>2015年底,中科院上海硅酸盐研究所黄富强研究团队发现,石墨烯是储能电极材料的最佳选择,并研制出一种高性能储能电极材料——氮掺杂有序介孔石墨烯。该材料具有极佳的电化学储能特性,可用作电动车的"超级电池"。该研究已于2015年12月18日发表于《科学》上。中国科学院上海硅酸盐研究所与广东省属企业广新控股集团所属的上市公司佛塑科技于2016年3月初签署了合作协议,由佛塑科技出资5 000万元与上硅所共同建设石墨烯动力锂离子电池研发中心项目。佛塑     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.