可溶性聚对苯乙炔衍生物非线性光学效应研究

以对甲氧基苯酚和溴代烷为原料,经过脱氯化氢反应合成了三种可溶性非对称烷氧基取代聚对苯乙炔 (PPV)衍生物,分别为聚(2 甲氧基 5 丁氧基)对苯乙炔(PMOBOPV)、聚[2 甲氧基 5 (3′ 甲基)丁氧基]对苯乙炔 (PMOMBOPV)和聚(2 甲氧基 5 辛氧基)对苯乙炔(PMOCOPV)。利用后向式简并四波混频(DFWM)研究了它们 的三阶非线性光学性质。结果表明PMOBOPV,PMOMBOPV和PMOCOPV的三阶非线性极化率(χ(3))分别为 3.14×10-10,5.96×10-10和3.71×10-10esu,相应的二阶分子超极化率(γ)分别为4.22×10-28,7.78×10-28和 5.00×10-28esu。分析了分子结构对聚对苯乙炔衍生物非线性光学性质的影响。采用分光光度计对三种材料的 光学禁带宽度(Eg)进行了测量,线性拟合的结果表明PMOBOPV,PMOMBOPV和PMOCOPV的Eg值分别为 2.08,2.03及2.05eV。     

酞菁掺杂有机改性溶胶-凝胶材料的Z-扫描研究

利用单光束 Z-扫描技术 ,在波长为 1.0 6 4μm,脉宽为 38ps条件下研究了 1,2 ,8,9,15,16 ,2 3,2 4 -八异戊氧基钯酞菁 (octa- Pd Pc)掺杂有机改性溶胶 -凝胶材料的三阶光学非线性光学性质。测得它的非线性折射率 n2 和三阶光学非线性极化系数χ(3 ) 的实部分别为 1.1× 10 -12 esu和 1.6×10 -13 esu。对此进行了分析和讨论。     

nc-Si∶H薄膜的三阶非线性光学性质

用简并四波混频技术 (DFWM)研究了nc Si∶H薄膜的三阶非线性光学性质 ,观察到了这种纳米薄膜材料的位相共轭信号 ,测得晶态比为XC1 =15 %和XC2 =30 % 的二个样品在光波波长为 5 89nm处的三阶非线性极化率分别为 χ1(3 ) =3 8× 10 - 6 esu和 χ2(3 ) =4 3× 10 - 7esu ,并对其光学非线性产生机理作了探讨     

聚3-辛酰基吡咯的合成及其光学特性研究

合成了一种大π共轭高分子———聚3 辛酰基吡咯(POPY)。利用1H NMR、FT IR和UV Vis对反应中间产物及目标产物POPY进行了结构表征。热重分析(TGA)表明,POPY可耐285℃的高温。通过真空I2掺杂处理,POPY的电导率提高了3个数量级,为0.023S/cm。采用标准后向简并四波混频(DFWM)系统对POPY的三阶非线性光学效应进行了研究。结果表明,在532nm处,POPY的三阶非线性极化率为9.2×10-10esu。光致发光(PL)研究表明,在360nm的紫外光的激发下,POPY能够发出很强的波长为414nm和437nm的蓝色荧光。     

Z-扫描法研究PMOCOPV的非线性光学效应

利用分光光度计对聚(2-甲氧基5-辛氧基)对苯乙炔(PMOCOPV)的光学禁带宽度(Eg)进行了研究,线性拟合的结果表明PMOCOPV的Eg为2.09 eV.采用单光束Z-扫描技术系统地研究了PMOCOPV的三阶非线性光学特性.研究表明,PMOCOPV为自散焦介质,其非线性折射率为-3.82×10-7 esu,非线性折射系数为-9.63×10-14 m2/W,非线性吸收系数为1.27×10-7m/W,三阶非线性极化率为8.58×1018m2/W.     

可溶性聚(2,5-二己氧基)对苯乙炔三阶非线性光学特性

报道了利用脱氯化氢反应制备可溶性聚(2,5二己氧基)对苯乙炔(PDHOPV),这种聚对苯乙炔(PPV)衍生物在波长450～550nm范围内具有强的光学吸收,最大吸收峰位于499nm处。采用简并四波混频(DFWM)技术对PDHOPV薄膜的非线性光学特性进行研究。结果表明:PDHOPV具有大的三阶非线性光学特性;激发波长为532nm的共振三阶非线性系数和1.064μm的非共振三阶非线性系数分别为9.6×10-10esu和2.1×10-11esu;电子共振增强有利于提高三阶非线性光学系数。     

利用DFWM技术测量甲酚紫Xe^（3）的研究

本文对甲酚紫激光染料的非线性光学性质做了进一步的研究,利用简并四波混频技术测得甲酚紫甲醇溶液(浓度为5×10~(-4)M的三阶非线性极化率Ze~((3))=2.0×10~(-10)esu。实验结果表明,甲酚紫具有较大的三阶光学非线性。     

Z扫描法测单壁碳纳米管薄膜非线性特性的研究

为研究单壁碳纳米管(SWCNT)薄膜的三阶非线性光学性质,采用旋转涂覆法在石英玻片上制备出包含SWCNT和聚甲基丙烯酸甲酯(PMMA)的聚合物薄膜。测得薄膜的线性透射谱,并观察了薄膜的表面形貌。为提高测量SWCNT薄膜三阶非线性系数的准确度,研究了Z扫描法测量材料的非线性系数时相关参量变化对测量准确度的影响,并搭建Z扫描系统,研究了自制薄膜的三阶非线性光学性质。通过对实验数据的模拟和计算,得到自制碳纳米管薄膜的非线性吸收系数(β)、三阶非线性折射系数(γ)分别为-7.8×10-7 cm/W、-6.4×10-11 cm2/W,三阶非线性极化率为2.06×10-9 esu。证明SWCNT/PMMA薄膜具有较强的非线性光学特性。     

nc-Si／SiO2多层薄膜的三阶非线性光学性质

用简并四波混频技术研究了 nc- Si/Si O2 多层薄膜的三阶非线性光学性质 ,观察到了位相共轭信号 ,测得实验用样品在光波波长为 5 89nm处的三阶非线性极化率χ( 3) 为 4.1× 10 - 7esu,并对该材料的光学非线性产生机理作了探讨。     

Fe_2O_3溶胶的三阶非线性光学特性

本文用简并四波混频研究了Fe_2O_3水溶胶和有机溶胶的三阶非线性光学特性,指出当Fe_2O_3微粒表面包覆一极性分子后可明显地增强其三阶非线性。实验测得Fe_2O_3水溶胶和有机溶胶的三阶非线性光学系数分别为1.3×10~(-10)esu和2.3×10~(-9)esu。分析了非线性效应的增强机理。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.