140 GHz, TE22,6模式回旋振荡管高频谐振腔

通过数值计算方法,编程模拟了140 GHz, TE22,6模式回旋振荡管开放式缓变截面谐振腔的传播特性,计算出谐振腔的谐振频率和品质因数;利用CST软件对该高频谐振腔进行仿真计算,得到腔体内横截面的电场分布云图。通过实验和仿真软件得到的数据进行比较,两者有较好的一致性。测试结果表明,当磁场为5.48 T,电子注电流为28 A,电子注电压为68.6 kV时,TE22,6模式的平均输出功率为0.25 kW,峰值功率为0.56 MW。当磁场为5.68 T,电子注电流为27.6 A,电子注电压为69.12 kV时,回旋振荡管可同样工作于TE22,6,2模式,平均输出功率为0.21 kW,峰值功率为0.47 MW。     

0.42THz频率连续可调同轴回旋管

作为目前工作在太赫兹频段输出功率最大的辐射源之一回旋管的功率可达到数十千瓦. 传统太赫兹回旋管一般为点频工作,难以满足动态核极化核磁共振等多方面技术需要。采用机械调节的方式,实现了带宽为2GHz中心频率为0.42THz二次谐波频率连续可调同轴回旋管,通过非线性理论分析发现,在不改变工作磁场条件下,在调节带宽范围内,可实现大于8kW的功率输出.     

3mm二次谐波回旋振荡管设计与数值模拟

二次谐波回旋振荡管的互作用磁场比基波回旋振荡管的磁场降低了一半,从而降低了设计难度,具有广阔的应用前景。通过对单腔结构的W波段二次谐波回旋振荡管高频结构、起振电流、模式竞争以及注波互作用研究,确定了W波段TE02模二次谐波回旋振荡管的基本工作参数,通过粒子模拟(PIC)软件进行计算,在电子注电压为60kV,注电流为6A及速度比为1.5时,获得了67.5kW的输出功率和超过18%的效率,且工作稳定。     

34GHzTE01模基波回旋速调管高频系统设计与实验

利用场匹配理论,建立了具有突变结构谐振腔的级联散射矩阵。通过数值计算,研究了具有突变结构谐振腔中各模式的反射相移随漂移段半径变化、工作模式的反射相移随腔体半径的变化、腔体中各模式的传播常数随腔体半径的变化、谐振腔的腔体长度和半径的关系,并完成了Ka波段TE01模回旋速调管的输入腔、群聚腔、输出腔的设计。同时给出了一支Ka波段TE01模四腔基波回旋速调管高频系统和整管的优化设计方案。PIC模拟表明：在中心频率34GHz,注电压70kV,注电流11A的情况下,获得了输出功率390kW,饱和增益42.9dB,电子效率50.6%,3dB输出带宽360MHz的结果。 通过样管的热测实验显示在34GHz,注电压70kV,注电流11A,获得了301kW的稳定输出脉冲峰值功率,41.8dB的增益,39.1%的效率,285MHz的3dB输出带宽。     

0.5THz二次谐波同轴回旋管的设计

二次谐波回旋管所需磁场仅为基模的一半,极大地降低了对工作磁场的要求.基于回旋管线性和自洽非线性理论设计了一只0.5 THz回旋管,采用TE56模为工作模式,分析了多项关键参数对注波互作用效率的影响,当其工作电压为49 kV,工作电流为5A,工作磁场为时9.94 T,效率为22.52％,输出功率可达55 kW.     

28GHz二次谐波回旋振荡管的自洽非线性计算

中等功率的连续波回旋管在工业领域有着重要的应用前景．本文对工作在28GHz频率的工业应用回旋振荡管进行了自洽非线性计算．结果表明,在二次谐波工作条件下,选取TE02模式,当电压为32kV、电流为6A时,可以获得连续波输出功率-50kW,效率-28％．     

8mm二次谐波回旋速调放大器的研究

对8mm高功率二次谐波回旋速调放大器进行了理论研究和优化设计,已研制出回旋速调放大器实验样管,并进行了热测实验,得到了如下结果:在中心频率为35GHz的情况下,得到的最大脉冲输出功率为180kW,效率为13%,增益为21dB;在电子束电压为58kV,电子束电流为25A的情况下,得到了150kW的输出功率,3dB带宽110MHz(0.3%).     

一种超低电压宽带调谐太赫兹回旋管互作用结构

低电压频率可调太赫兹回旋管在生物医学和波谱学等领域具有重要应用。文章分析了超低电压(<1 kV)下采用传统开放腔互作用电路的330 GHz 回旋管输出功率和频率调谐特性,探讨了超低电压下由于电子相对论效应减弱而导致的回旋管中电子注-波互作用耦合强度降低的问题。在此基础上,针对330 GHz 超低电压回旋管提出了一种改进的互作用电路结构,其下倾式尾端结构有助于增大反向波幅度,提高弱相对论电子注与电磁波之间的耦合强度,从而提高回旋管的输出效率及频率调谐带宽。非线性模拟结果表明,在低至0.3 kV 的超低电压下,采用此种互作用电路结构仍可获得大于1 W 的连续波输出功率及22 GHz 的连续调谐带宽,峰值输出效率大于7%。     

W波段二次谐波回旋行波管放大器

采用谐波工作的回旋管互作用磁场比基波磁场降低了1/s,可降低整管磁场设计难度,具有较大的应用前景。通过对W波段二次谐波回旋行波管高频介质加载结构、模式竞争和注波互作用研究,确定了该放大器的工作参数。非线性模拟表明,当应用100 kV,20 A,α=1.2的电子注时,该回旋管可在91 GHz频率处产生465 kW的输出功率和49 dB的增益结果。并且,基于耦合波理论,讨论了一个轴对称半径微扰的TE02~TE01输出模式变换器,效率在95%以上时,其带宽达到4 GHz。     

光电子技术

0513334Ka 波段二次谐波回旋速调管放大器的输出特性[刊,中]/梁显锋//强激光与粒子束.—2005,17(1).—113-116(E)根据谐波回旋速调管放大器的注-波互作用特点,对 Ka 波段二次谐波三腔回旋速调管放大器的输出腔进行了数值模拟和优化设计,获得了输出腔末端高频波绕射输出孔径和腔体绕射 Q 值的对应关系。通过PIC 粒子模拟,分析了该放大器的频率响应特点等输出特性。结果表明,在35GHz 频率,磁场0.685T,电子注电压70kV,电流15A,横纵速度比为1.45,输入功率1.6kW 时,放大器可以获得超过220kW 的峰值输出功率、约22%的效率和23dB 的增益,3dB 带宽可以达到110MHz。参9     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.