基于MAC批量绑定与Portal认证的双重准入控制的设计及应用

针对高校校园计算机网络的网络安全和准入控制,通过在二层交换机上配置MAC地址+端口的批量绑定和在三层交换机上启动网关Portal重定向认证的双重准入控制,有效地控制了非法用户的接入,防止了ARP病毒的入侵,实现了校园宿舍区域网络终端用户的安全准入控制.本文以北电和华三的设备配置为例介绍了具体的设计和配置.     

3UPXIExpress嵌入式控制器

NIPXIe-8115高性能嵌入式控制器配备了最新的Intel第二代Corei5双核处理器,能够缩短测试时间,是多核应用程序的理想选择。NIPXIe-8115控制器具有多种外设I／O端口以及6个行业领先的USB2．O瑞口。这些板载外设端口最大限度地减少了外部适配器的个数,     

基于软件定义的网络准入控制体系

网络准入控制主要通过安全认证与控制实现端点的安全接入,各类准入控制技术不断涌现和发展以解决局域网边界安全问题,然而随着网络复杂性和部署管理便捷性要求的提升,固定的准入控制手段已不能适应种类繁多的安全场景需求。综述准入控制框架及技术发展,提出一种基于软件定义思想的准入控制体系,阐述其模型、架构、主要技术及应用场景,通过资源编排、资产管理与态势统一呈现等设计适应不同用户环境的安全准入和资产管理需求。     

安全多播准入控制系统的研究与实现

安全问题一直是多播技术发展中一个亟待解决的问题,而在所有的安全问题中,安全多播准入控制是研究的焦点.研究了国内外现有的典型多播准入控制方案,对它们的优缺点进行了分析和比较研究.结合各种多播准入控制方案的优点,给出了一个基于IGMP协议的安全多播准入控制方案.实验表明该安全多播准入控制方案具有安全性高、稳定性好、扩展性好、易于迁移到IPv6环境和便于部署等特点,有较高的实际应用价值.     

一种用于微波控制电路控制端口的静电/浪涌电压泄放结构

提出一种用于泄放微波控制电路[0,5 V]或[0,-5 V]电压控制端口的静电/浪涌电压结构,分别给出了[0,5 V]或[0,-5 V]电压控制端口静电/浪涌电压泄放结构的设计方法,并对其工作原理进行了分析。通过建立泄放结构开启和关断状态下的仿真分析模型,利用ADS设计软件仿真所设计结构对控制端TTL动态控制信号完整性的影响。分析结果表明,该设计结构嵌入到微波控制电路的输入端口,不影响TTL动态控制信号的完整性。经微波五位数控衰减器的控制端口应用验证,对器件的静电/浪涌电压敏感控制端口具有较好的保护作用。     

UniAccess网络准入控制技术简介

网络是现代企业运营和服务的基础,网络安全就是一道保护门.通过UniAccess网络准入控制技术的部署和应用,企业网络安全级别可以得到显著提升.文中介绍了UniAccess网络准入控制的功能和优势,以及部署UniAccess网络准入控制的必要性.     

IP城域网业务控制层BRAS可靠性设计方案探讨

BRAS作为IP城域网业务控制层管理用户及流量的核心设备,其可靠性设计是实现城域网高QoS的重要保证。在目前BRAS热备技术尚不完善的情况下,本文提出了端口聚合、分场景冷备等多种可靠性设计方案,并对各种方案的优劣势及适用场景进行了分析和探讨。     

中兴通讯参建东北大学远程教育系统

近日,中兴通讯和沈阳电信、东北大学签订了东北大学网络教育学院远程教育系统建设合同。 该工程采用中兴的ZXR10-C交换路由器和基于IP的远程教育设备。ZXR10-C系列交换路由器端口类型丰富,支持ATM、SDH、GE、FE、E1/T1、Serial等,非常适合做多种端口类型的远程系统连接;L2/L3/L4层的转发速率高、全硬件实现,适合多媒体实时业务;以及由于QOS、速率控制和策略控制能力好、性     

节约单片机端口资源的键盘电路

I／O端口是单片机实现对目标控制的端口,一般小型单片机的I／O端口都十分宝贵,文中介绍了一种可节省单片机I／O端口的键盘电路,分析了新型键盘电路的结构和工作原理,最后给出了基于该键盘电路的C51语言程序和软件处理过程。     

HNB小区UE准入控制策略研究

在介绍LAC资源分配方案的基础上,对封闭模式下不同的准入控制方案进行了分析,并着重给出了一个完整的准入控制解决方案。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.