MIMO通信系统中一种新的自适应均衡方法

该文提出了时变频率选择性衰落环境下多输入多输出(MIMO)通信系统中一种新的基于递归最小二乘(RLS)的自适应干扰对消的判决反馈均衡方法(RLS-IC-DFE)。该方法将每个数据子流上的自适应判决反馈均衡器等效为一个加长的新的均衡器,并把已解出的子流数据作为新的输入参数,应用RLS算法自适应调整新的均衡器参数。仿真结果表明,该文提出的自适应干扰对消的判决反馈均衡器可以自适应跟踪信道变化,同时比已有的判决反馈均衡器(RLS-DFE)能提供更好的误符号率(SER)性能。     

一种用于数字QAM接收机的盲均衡器实现

提出了一种适用于数字QAM接收机的自适应盲均衡器实现方案。该均衡器采用多模算法(MMA)和最小均方算法(LMS)，称为MMA—LMS算法结合判决反馈结构(DFE)，即采用前向滤波器和反馈滤波器两级滤波器组实现，提高了信道的适应性能和降低均衡器的阶数。仿真结果表明，该均衡器比一般采用恒模算法(CMA)的横式均衡器有更好的性能，更易于硬件实现。     

基于多模算法的判决反馈均衡器

研究了基于MMA/GMMA(多模算法/通用多模算法)全数字QAM接收机中DFE(判决反馈均衡器)的设计.此均衡器首先工作于MMMGMMA模式,当均衡器输出的误差足够小时,切换到判决反馈模式.通过大量仿真可以看出,该均衡器能够达到较好的性能.     

反馈联合检测算法性能上限研究

反馈联合检测算法通常可为迫零数据块判决反馈均衡器(ZF-BDFE)和最小均方差数据块判决反馈均衡器(MMSE-BDFE)算法。本文研究了反馈联合检测算法性能及其上限,提出了算法性能上限的分析结构。研究表明,MMSE- BDFE算法性能优于ZF-BDFE；ZF-BDFE和MMSE-BDFE分别与各自算法性能上限之间相差均不会超过0．5dB。反馈联合检测算法可以满足实际通信系统的要求,应用前景良好。     

基于零点消除的无线OFDM系统 信道缩短均衡器

针对无线信道的有限冲激响应及其全零点特性,本文设计了一种基于零点消除的无线正交频分复用(OFDM)系统信道缩短均衡器,该均衡器利用零点消除的方式有效地缩短信道时延扩展长度,并采用反馈滤波器的形式来实现无限冲激响应滤波器,该方案不仅降低了信道缩短均衡器算法的复杂度,而且也大大简化了无线OFDM系统的设计与实现.仿真结果验证了上述方案和算法的有效性.     

时域自适应均衡技术的分析与应用

概述了频率选择性衰落信道的传输特性,论述了采用均衡技术的必要性。通过对各种均衡器结构和自适应均衡算法在抵抗符号间干扰能力、收敛速度以及运算复杂度等方面的分析与比较,选择了判决反馈作为均衡器结构、最小均方自适应算法作为自适应准则的均衡器方案。仿真及试验结果证实了设计的时域自适应均衡器不仅具有较强的抵抗符号间干扰能力,而且能够获得隐分集增益,在频率选择性衰落信道中具有良好的应用效果。     

自适应均衡算法在信道均衡技术中的应用研究

文中描述了两种非线性均衡器分别为判决反馈均衡器(DFE)和最大似然序列估计(MLSE)均衡器.所用信道模型为加性白高斯噪声信道,在DFE和线性均衡器(LE)中都是使用递归最小二乘(RLS)算法和最小均方(LMS)算法对数据进行分块处理.MLSE均衡器中使用了维特比最佳译码算法.就误比特性能来做以比较,DFE远好于LE,MLSE均衡器又明显优于DFE,并且它能达到几乎最优的性能.     

一种改进的部分判决反馈均衡器算法

在部分判决反馈均衡器的基础上,采用了抽头系数分级限定技术对其进行改进.经过理论分析和计算机模拟表明:在相同的算法复杂度的条件下,改进算法能有效地提高均衡器的SNR性能.     

基于多用户反馈的判决反馈均衡器的研究

本文提出的一种新颖的基于多用户反馈的判决反馈均衡器,解决了在CDMA多用户检测中传统自适应判决反馈均衡器误码率高、系统容量小的缺点.它由具有误差反馈滤波器的判决反馈均衡器(Decision Feedback Equalizer with Error Feedback Filter,DFE-EFF)构成,并在判决后反馈多用户数据抵消多址干扰(多用户反馈干扰抵消).文中给出其结构图,分析各种判决反馈均衡算法.理论证明,具有误差反馈滤波器的多用户反馈干扰抵消判决反馈均衡器(多用户反馈干扰抵消DFE-EFF)较各种判决反馈均衡器为最优,它能同时有效处理ISI,MAI和噪声的干扰.仿真结果表明,在误码率性能和系统容量两方面,多用户反馈干扰抵消DFE-EFF比DFE、DFE-EFF均有较大改善.     

一种基于FPGA的判决反馈均衡器

论述了一种基于现场可编程门阵列( FPGA)的判决反馈均衡器的设计.首先介绍了判决反馈均衡器的原理,然后给出了Simulink仿真的电路和仿真结果,介绍了用分布式算法(DA)来实现滤波器的原理和各模块原理,最后给出Modelsim仿真结果.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-