一种CDMA系统反向功率控制的算法

本文简要介绍了基于ＩＳ－９５的ＣＤＭＡ系统反向信道功率控制的原理及其算法实现，从理论上分析了理想的精确功率控制和非精确功率控制对反向信道爱尔兰容量的影响，并对反向闭环功控算法和外环功率控制算法进行了仿真，得到爱尔兰容量最大的仿真算法。     

WCDMA下行链路软切换增益分析

在WCDMA无线网络中，由于新业务的非对称性，下行链路更有可能成为系统容量的瓶颈。研究了在理想功率控制下路径损耗因子、阴影标准方差等不同无线参数对下行链路软切换容量增益的影响，为无线网络规划提供了一定的依据。     

非理想功率控制下VSG-CDMA系统的容量分析

该文研究分析了非理想功率控制下,多种类型用户并存时VSGCDMA系统的容量问题。文中根据小区内干扰Iin和他区干扰Iother导出了用户接入许可条件,该条件对用户均匀分布和非均匀分布情况均适用。在此基础上文中推导了链路失败概率的计算公式,并导出了他区用户的干扰分布。     

多业务蜂窝CDMA系统的干扰与容量分析

基于码分多址接入（CDMA）的第三代移动通信系统将支持语音、视频、email,FTP,Web浏览等多种业务传输，该文提出了一种多业务蜂窝CDMA系统上行链路的干扰特性与容量的一般分析方法，考察了在不同的业务混合条件下，分别采用高斯分布与对数正态分布来近似干扰的统计特性时，系统的中断性能与容量关系。理论分析与仿真结果表明，采用对数正态分布来近似干扰的统计特性可以获得更加精确的分析结果。此外，该文还研究了阴影衰落、功率控制误差和非理想扇区天线这些实际因素对系统干扰与业务容量的影响。     

WCDMA系统中的单小区线性功率控制

功率控制是WCDMA移动通信系统中提高系统容量和保证链路通信质量的关键技术.介绍了WCDMA系统中功率控制的原理,阐述了单小区中的线性功率分配算法,并对原来的功率分配算法进行了改进.     

LTE系统中多用户MIMO容量分析

首先简单介绍了LTE通信技术,在此基础上分析单用户MIMO系统容量以及相应的功率分配问题,随后对多用户MIMO系统功率分配问题做了简单介绍,并给出上行链路和下行链路的容量区域表达式,最后给出4种信道情况下容量之间的关系。     

WCDMA软切换中的下行功率控制方案

发射功率控制是CDMA系统的关键技术之一。在WCDMA的软切换中，传统下行链路功率控制方案的实现主要存在两个问题：基站发射功率的失衡和下行链路干扰的增大。为解决上述问题，本介绍三种新的下行功率控制方案：降低TPC频率功率控制、调整环功率控制和站选择分集发射功率控制。其中前两种方案用于恢复软切换中基站发射功率的平衡，而最后一种方案用于减小下行链路干扰。研究表明，利用上述方案能够有效减小软切换中基站发射功率的差异或下行链路干扰，从而提高了系统容量。     

CDMA上行链路功率控制函数对系统容量的影响

根据对ＣＤＭＡ蜂窝系统上行链路干扰模型的分析，导出了行链路功率控制函数与系统容量之间的关系式，计算机模拟结果表明，与其它几个常用的功率函数相比，由本提出了使下行链路系统容量最大的最佳功率控制函数不使上行链路系统量最大，而且还比下行时的系统容量大１．４倍左右。     

功率控制对S-CDMA-HFC系统上行信道Erlang容量的影响

同步ＣＤＭＡ（Ｓ－ＣＤＭＡ）解决了双向ＨＦＣ系统的上行信道噪声和容量问题,基于Ｓ－ＣＤＭＡ的ＨＦＣ是新一代ＨＦＣ系统。从系统实现的角度来看,非理想功率控制会明显降低系统业务容量。本文简单介绍了Ｓ－ＣＤＭＡ－ＨＦＣ系统模型和上行信道概况,分析了非理想功率控制对Ｓ－ＣＤＭＡ－ＨＦＣ系统上行信道Ｅｒｌａｎｇ容量的影响,并给出了数值结果与结论。     

非理想功率控制下WCDMA系统中的业务速率与系统容量

根据 WCDMA系统单小区功率分配算法有解的充要条件,通过将目标信干比抽象为对数正态随机变量的方法,该文得出了非理想功率控制条件下系统容量的定量关系式,为研究非理想功率控制下,VBR(Variable Bit Rate)业务的速率与 CBR(Constant Bit Rate)和 VBR业务的用户容量间的关系提供了一条有效的途径。分析和数值计算结果表明,非理想功率控制对系统性能有着显著的影响,业务速率和系统容量之间存在的互换关系。可以根据不同业务的性能要求,通过改变业务参数来提高系统的适应性,从而提高系统的资源利用率和服务质量。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-