倾斜结构InGaAsP/InP集成超辐射光源

为提高半导体超辐射器件的输出功率 ,在原有的将超辐射发光管 (SLD)与半导体光放大器 (SOA)单片集成的基础上 ,将器件电流注入区中心轴线倾斜 6° ,制得了 1 5 μm倾斜结构的InGaAsP InP集成超辐射光源。发现这种新型结构的单片集成器件具有抑制激射的功能。在较低的电流注入下 ,得到了 38mW的脉冲超辐射输出功率。其光谱宽度 (FWHM )和平行、垂直于结平面的远场半宽分别为 16nm ,15°和 6 4°。同时 ,通过对该集成器件特性的研究 ,发现如何增加SOA部分的入射光功率是提高该集成器件性能的一个十分关键的因素     

长波长超辐射集成光源

为适应光谱分割技术的需求,我们采用ＩｎＧａＡｓＰ／ＩｎＰ单量子阱外延片,用直接耦合的方法将超辐射发光管与半导体光放大器单片集成,制得了１．３μｍ长波长超辐射集成光源,取得了初步的实验结果,验证了这种长波长集成器件的可行性。脉冲输出功率与长波长超辐射发光管相比有很大提高。半导体光放大器的增益达到１９ｄＢ。     

高功率850 nm宽光谱大光腔超辐射发光二极管

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为提高半导体超辐射发光管的光谱宽度,采用非均匀阱宽多量子阱(MQW)材料拓宽超辐射器件的输出光谱。优化设计器件的波导结构,利用大光腔结构设计出高功率、低发散角850 nm超辐射发光二极管。采用直波导吸收区而后在器件的出光腔面上镀制抗反射膜的方法制作超辐射发光二极管。器件在140 mA时器件半峰全宽(FWHM)可以达到26 nm,室温下连续输出功率达到7 mW。器件的垂直发散角为28°,水平发散角为10°。由于器件具有比较小的发散角,与光纤耦合时具有比较高的耦合效率,单模保偏光纤耦合输出功率达到1.5 mW。     

半导体激光器功率输出特性的理论分析及实验研究

本文从理论上及实验上分析研究了半导体激光器(LD)功率输出特性与其腔面反射率之间的关系.研究结果表明,通过改变LD腔面反射率,可以使其输出功率增大,也可以使其转变为新的光电器件,如超辐射发光二极管(SLD)或行波半导体激光放大器(TW-SLA)等等.在大量实验数据的基础之上建立了LD输出功率曲线阈值与腔面反射率关系的经验公式,确定了LD最佳输出功率腔面反射率以及SLD和TW-SLA的工作条件.     

新型辐射桥结构VCSEL的设计、制作和热特性分析

为了改善垂直腔面发射半导体激光器(VCSEL)的热特性,提高器件的输出功率,设计并制作了一种新型辐射桥结构VCSEL。利用有限元热分析软件ANSYS,模拟了常规结构和辐射桥结构VCSEL内部的热场分布和热矢量分布。经模拟得到,常规结构器件的热阻为4.13K/W,辐射桥结构的热阻为2.64K/W。而经实验测得,常规结构器件的热阻为4.40K/W,辐射桥结构器件的热阻为2.93K/W,实验测试结果与模拟结果吻合较好。同时测得,常规结构器件的最大输出功率为305mW,辐射桥结构器件的最大输出功率为430mW,后者的输出功率提高了40%。     

75 GHz 13.92 dBm InP DHBT 共射共基功率放大器

报道了基于InP基双屏质结双板晶体管(DHBT)工艺的四指共射共基75 GHz微波单片集成(MMIC)功率放大器,器件的最高振荡频率fmax为150 GHz.放大器的输出极发射极面积为15μm×4μm.功率放大器在75 GHz时功率增益为12.3 dB,饱和输出功率为13.92 dBm.放大器在72.5 GHz处输入为2 dBm时达到最大输出功率14.53 dBm.整个芯片传输连接采用共面波导结构,芯片面积为1.06 mm×0.75 mm.     

微波功率模块

功率模块(MPM)是指应用于微波和毫米波频段的高度小型化和全集成的放大器(发射机)将三种传统的不同器件:行波管(TWT)、电源和固体放大器(SSA)集成于一个组件中,形成“超级”部件功率模块。(按照设计要求,功率模块可在1.5倍频程上提供增益大于50dB的100W的连续波射频输出功率)。     

基于808nm半导体激光器单管合束技术的光纤耦合模块

由于单管半导体激光器比半导体激光线阵、叠阵具有更好的光束质量及散热特性,因此更适用于光电干扰光源。针对于电荷耦合器件(CCD)光谱响应曲线特征,采用808nm单管半导体激光器为光源,将24只单管半导体激光器分组集成,通过空间合束和偏振合束以提高其输出功率密度,采用自行设计的光学系统对光束进行扩束聚焦,耦合进芯径为300μm,数值孔径0.22的光纤中,所有激光器都采用串联方式,在8.5A电流下通过光纤输出功率为162W,耦合效率达到84%。     

腔面反射率对超辐射发光二极管输出特性的影响

本文用耦合速率方程,从理论上分析研究了超辐射发光二极管(SLD)的功率输出特性。主要讨论了腔面反射率对其功率输出特性的影响。研究结果表明,半导体激光器(LD)存在一最佳输出功率腔面反射率,随腔面反射率的降低,SLD的功率曲线斜率减小,输出功率降低,光谱调制深度减小。增大后腔面反射率可以提高SLD的输出功率,减小其工作电流。由于腔面反射率的降低,前后传输的光子在有源区内的分布的对称性发生了变化,表现为非均匀性,后向传输波大于前向传输波。最后,把理论计算结果同我们研制的1.3μm徐层结构超辐射发光二极管的实验结果作了比较,得到了较好符合。     

大功率半导体光放大器的耦合工艺研究

针对高速大功率半导体激光器,设计了主振激光器与半导体光放大器分立集成的高速大功率半导体激光器组件,并对其中半导体光放大器(SOA)的光纤耦合技术进行了研究,采用单模光纤耦合技术以及光路可逆原理设计了SOA的注入端耦合光路,实现了主振激光器到SOA的高效注入,耦合效率大于50%,采用微透镜组技术设计了SOA输出端的耦合光路,实现了Φ62.5μm的光纤耦合输出238mW。同时针对光纤耦合工艺,利用Ansys软件对耦合结构进行了激光焊接耦合工艺的热应力分析,得到了优化的焊接工艺条件,并对耦合中存在的应力进行了释放处理,有效提高了输出功率的稳定性。     

High-power integrated superluminescent light source

In order to increase the optical output power of semiconductor superluminescent device, a direct coupling method had been used to integrate, monolithically, the superluminescent diode with a semiconductor optical amplifier. By this means, two kinds of integrated superluminescent light source have been fabricated. High output power was obtained in pulsed operation.     

不同陡峭边沿的皮秒光脉冲经半导体光放大器后的时域特性分析

分析了具有不同徒峭程度边沿的皮秒光脉冲通过半导体光放大器后输出脉冲的时域特性，其中着重考虑了输出脉冲的峰值功率和脉冲宽度的变化。结果表明：输出脉冲的峰值功率、脉冲宽度与输入脉冲的峰值功率、输入脉冲边沿的徒峭程度以及半导体光放大器的偏置电流密切相关。     

基于半导体光放大器交叉增益调制效应的主动锁模光纤激光器

提出一种腔内损耗小的基于半导体光放大器(SOA)交叉增益调制效应(XGM)的主动锁模光纤激光器结构。使用光环行器成功减小了激光器的腔内损耗,提高了激光器的输出功率。从理论上对有理数谐波锁模过程中腔内脉冲复合的物理机制进行了详细分析。利用有理数谐波锁模技术,在调制频率为10 GHz下,得到了重复频率为30 GHz的皮秒级光脉冲序列输出,其峰值功率约0.5 mW。由于半导体光放大器的宽增益谱与滤波器的较大可调谐范围,使得激光器输出可以在较大的波长可调谐范围内保持较大功率输出。成功实现了调制频率为20 GHz的谐波锁模短光脉冲输出,可调谐范围达40 nm,峰值功率大于0.65 mW。半导体光放大器和激光器的短腔长保证了激光器的长期稳定性。     

All-optical ultra-wideband doublet signal source based on the cross-gain modulation in a semiconductor optical amplifier

We propose a novel scheme to generate the ultra-wideband (UWB) doublet signal pulse based on the cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA). In the scheme, only an optical source and an SOA are needed. As there is only one wavelength included in the output doublet signal pulse, no time difference between the upper and down pulses is introduced during the transmission process. By using the software of Optisystem 7.0, the impacts of the optical power, the SOA current, the wavelength and the input signal pulse width on the generated doublet pulse are simulated and tudied numerically. The results show that when the pulse width of the input signal pulse is larger, the output signal pulse is better, and is insensitive to the change of wavelength. In addition, the ultra-wideband positive and negative monocycles can be generated by choosing suitable optical source power and SOA current.     

A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure

A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of >+19.6 dBm and a low chip NF of <4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s nonreturn-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of +18.1 dBm.     

Research of all-optical ultra-wideband triplet signal source based on a single semiconductor optical amplifier

A novel scheme for all-optical ultra-wideband triplet signal pulse generation based on the cross-gain modulation (XGM) in a single semiconductor optical amplifier (SOA) is demonstrated. In this scheme, only one optical source and one SOA are needed, so the configuration is simple. Due to only one wavelength is included in the generated triplet pulse, no time difference between output signal light and probe light is introduced during the transmission process. By using the software of Optisystem 7.0, the impacts of the input signal width, the optical power and the wavelength of the optical source on the generated triplet pulse are numerically simulated and studied. The results show that the proposed scheme has better triplet signal pulse when the input signal pulse width is larger, and it is insensitive to the wavelength change within a certain range.     

Analysis of the characteristics of TOADs subject tofrequency-detuned control and signal picosecond pulses

A detailed numerical investigation has been undertaken of the dynamic responses of semiconductor optical amplifiers (SOAs) and hence the operating characteristics of terahertz optical asymmetric demultiplexers (TOADs) devices subject to frequency-detuned picosecond control and signal pulses, taking into account both gain saturation and nonlinear gain compression in the SOA. It is shown that the output behavior of TOADs exhibits significant differences depending on whether the signal and control pulses are at higher relative frequencies (positive detuning) or lower relative frequencies (negative detuning). The analysis indicates that negative frequency detuning can be used to achieve an enhanced output power in the switched region and a reduced width of switching window. Calculations are shown to be in good agreement with available experimental results     

1.3-W ripple-free superluminescent diode

This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-nm high-power triple quantum-well InGaAs-AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.