| 倾斜结构InGaAsP/InP集成超辐射光源 |
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| 引用本文： | 刘杨,曾毓萍,宋俊峰,殷景志,杜国同.倾斜结构InGaAsP/InP集成超辐射光源[J].中国激光,2001,28(5):412-414. |
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| 作者姓名： | 刘杨 曾毓萍 宋俊峰 殷景志 杜国同 |
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| 作者单位： | 吉林大学电子工程系集成光电子学国家重点联合实验室!长春130023(刘杨，曾毓萍，宋俊峰，殷景志)，吉林大学电子工 (杜国同) |
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| 基金项目： | 国家“8 6 3”高技术计划，国家自然科学基金!(6 97770 0 5 )，教育部博士点基金资助课题 |
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| 摘 要： | 为提高半导体超辐射器件的输出功率 ,在原有的将超辐射发光管 (SLD)与半导体光放大器 (SOA)单片集成的基础上 ,将器件电流注入区中心轴线倾斜 6° ,制得了 1 5 μm倾斜结构的InGaAsP InP集成超辐射光源。发现这种新型结构的单片集成器件具有抑制激射的功能。在较低的电流注入下 ,得到了 38mW的脉冲超辐射输出功率。其光谱宽度 (FWHM )和平行、垂直于结平面的远场半宽分别为 16nm ,15°和 6 4°。同时 ,通过对该集成器件特性的研究 ,发现如何增加SOA部分的入射光功率是提高该集成器件性能的一个十分关键的因素
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| 关 键 词： | 超辐射发光管 半导体光放大器 单片集成 光谱分割 多波长光源 |
| 收稿时间： | 2000/3/14 |
InGaAsP/InP Integrated Superluminescent Light Source with Tilted Structure |
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| LIU Yang,ZENG Yu-ping,SONG Jun-feng,YIN Jing-zhi,DU Guo-tong.InGaAsP/InP Integrated Superluminescent Light Source with Tilted Structure[J].Chinese Journal of Lasers,2001,28(5):412-414. |
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| Authors: | LIU Yang ZENG Yu-ping SONG Jun-feng YIN Jing-zhi DU Guo-tong |
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| Abstract: | Based on original idea about monolithic integration of the SLD (superluminescent diode) with SOA (semiconductor optical amplifier), the axis of current injection region was tilted by 6° with respect to the output facet normal, by this means, 1.5 μm InGaAsP/InP integrated superluminescent light source with tilted structure has been fabricated. High superluminescent power of 38 mW was obtained at lower pumping level by co-operation of the two sections. The spectral full width at half maximum (FWHM) is 16 nm, and the FWHM far field pattern (FFP) parallel and perpendicular to the junction plane are 15° and 64°, respectively. A new phenomenon was discovered, in which the lasing action was suppressed by pumping the SLD section of the integrated device properly. |
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| Keywords: | superluminescent diode semiconductor optical amplifier monolithic integration spectrum slicing multiwavelength light source |
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