高功率850 nm宽光谱大光腔超辐射发光二极管

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为提高半导体超辐射发光管的光谱宽度,采用非均匀阱宽多量子阱(MQW)材料拓宽超辐射器件的输出光谱。优化设计器件的波导结构,利用大光腔结构设计出高功率、低发散角850 nm超辐射发光二极管。采用直波导吸收区而后在器件的出光腔面上镀制抗反射膜的方法制作超辐射发光二极管。器件在140 mA时器件半峰全宽(FWHM)可以达到26 nm,室温下连续输出功率达到7 mW。器件的垂直发散角为28°,水平发散角为10°。由于器件具有比较小的发散角,与光纤耦合时具有比较高的耦合效率,单模保偏光纤耦合输出功率达到1.5 mW。

High-Power 850 nm Large Optical Cavity Wide Spectrum Superluminescent Diode

Superluminescent light emitting diode is a semiconductor light source whose high performance is between those of laser diode and light emitting diode. Non-uniform well-thickness multi-quantum wells (MQWs) materials were adopted to widen the output spectrum of superluminescent diodes (SLDs). The 850 nm high-power, low-beam divergence superluminescent diodes with large optical cavity structure have been fabricated by optimizing waveguide structure. By adopting ridge waveguide unpumped absorbing region structure and by antireflection (AR) coating technology, the superluminescent diodes were fabricated. The spectral halfwidth (FWHM) of over 26 nm, continuous wave (CW) output power of over 7 mW have been achieved at operating current of 140 mA. The vertical beam divergence angle is 28° and horizontal angle is 10°. The pigtail output power of single mode polarization maintaining fiber reached 1.5 mW due to lower vertical beam divergence.