硫系集成光频梳（特邀）

硫系玻璃集成光学微腔（硫系微腔）具有高线性折射率和高非线性系数、超宽透光窗口、较低的热光系数,并且可通过常规半导体微纳加工技术实现精确的色散调控,在非线性集成光子学领域备受关注。近年来,来自中山大学的研究者们开发了新型Ge₂₅Sb₁₀S₆₅硫系材料平台并实现了一系列具有高品质的硫系集成光子器件。主要综述了基于硫系微腔实现集成孤子光频梳产生和调控方面的工作。通过不断优化集成光子器件的加工工艺,实现了具有高品质因子（Q>106）的集成微环谐振腔,进一步通过精确的色散调控分别在该硫系集成微腔内实现了低泵浦功率的锁模光孤子频梳和宽带可调谐的拉曼-克尔光频梳。     

硫系玻璃Ge28Sb12Se60薄膜光学非线性增强色散特性

采用真空热蒸发以及退火工艺制备了支持局域表面等离激元的微纳结构薄膜,在此薄膜上蒸镀了硫系玻璃Ge₂₈Sb₁₂Se₆₀薄膜。应用Z-扫描技术,在飞秒激光脉冲激发下研究其光学非线性增强的色散特性,在650 nm和850 nm波段观察到了非线性吸收增强;非线性折射率随着波长的增加由负变正。通过扫描电子显微镜和透过光谱表征和分析了硫系玻璃Ge₂₈Sb₁₂Se₆₀薄膜非线性吸收增强的原理,非线性吸收随着波长的增加由单光子吸收为主逐渐转变为双光子吸收为主;银膜的微纳结构导致硫系玻璃薄膜的共振中心频率发生了偏移。实验制备的用于增强硫系玻璃非线性的微纳结构制作简单,无需复杂光刻工艺,为非线性光子学器件的设计提供了新的思路。     

硫系玻璃集成光子器件综述(特邀)

硫系玻璃具有超宽的红外透过光谱范围、较高的线性折射率、极高的光学非线性和超快的非线性响应,近年来在集成光子器件研究领域备受关注。首先回顾了硫系玻璃集成光波导的制备,综述了硫系集成光子器件在红外传感和高性能非线性应用方面取得的进展,然后介绍了硫系相变光子器件在光开关、光存储和光计算等方面的前沿进展,最后对目前硫系玻璃光子器件研究存在的问题进行了归纳,并对未来的研究方向进行了展望。     

硫系基质光波导的非线性应用研究进展

随着集成化程度的不断提高,对非线性光波导制备的各种集成光电子器件的研究成为了当前热点。然而,传统基质材料受自身的非线性特性所限,成为制约光波导器件进一步发展的首要问题。介绍了硫系玻璃材料三阶非线性的研究现状。研究表明,硫系原子在强光作用下容易发生电子云畸变,非线性响应时间可达飞秒数量级,且非线性折射率与金属共价键有着重要的关联。从基质种类、制备工艺和非线性应用领域等方面回顾了硫系基质光波导的研究进展。针对目前研究中存在的问题,提出环保型的基质材料、完善的制备工艺和新型的光波导器件将是未来硫系基质光波导的研究方向。     

硫系玻璃光波导研究进展

硫系玻璃具有超高的非线性折射率、超快的非线性响应、超低的双光子吸收和独特的光敏特性等品质,成为一种新型全光信号处理的理想材料。简介了硫系玻璃材料的基本特性,回顾了硫系玻璃光波导研究历程及其在非线性方面的应用,并对其发展前景进行了展望。     

基于微纳光纤的通信器件研究进展

详细介绍了基于不同种类微纳光纤的光源、光耦合器、光开关和滤波器的结构、工作过程及性能参数,总结了基于微纳光纤的光纤通信器件的研究进展情况。指出微纳光纤器件的实用化是光纤通信器件的发展方向。     

微纳结构非线性光学及其全光调控研究进展

随着微纳光子学的提出与发展,在纳米尺度上操纵和控制光子,发展体积更小、速度更快的光子器件,实现全光集成,已成为国际研究前沿和新技术领域竞争的热点。其中以光子晶体、表面等离激元微纳结构为代表的微纳光子学研究及应用在国际上得到了广泛的重视和蓬勃发展,特别是其微纳结构的非线性光学、全光调控与器件的应用研究。本文主要综述了微纳结构增强的光学非线性及其非线性全光调控研究进展。     

表面增强硫系玻璃Ge28Sb12Se60薄膜非线性吸收（特邀）

文中利用热蒸发以及退火等工艺制备了支持局域表面等离子体激元（LSP）的微纳结构，来增强硫系玻璃Ge₂₈Sb₁₂Se₆₀ (GSS)薄膜的非线性吸收效应；搭建了Z-scan光路，实现了对样品非线性折射与吸收的测量；通过对样品透射光谱的分析，揭示了GSS非线性吸收增强效应的原理。并研究了该微纳结构对不同厚度GSS非线性吸收的增强规律。文中用到的LSP微纳结构制作简单，无需复杂光刻工艺，可为增强材料光学非线性研究提供重要参考。     

适用于微纳流控芯片对准连接的微装配系统

针对微纳流控芯片等器件的对准装配问题,分析了具体操作要求,建立了一套包含显微光学观测单元、机械进给调整和器件吸取一放置等的微装配系统,采用暗场照明观测微纳结构,高精度移动平台精确调整基片与盖片之间的角度与位置,利用真空吸附的方法抓取和释放.采用该系统成功地制造了多种可用的微纳流控芯片,以玻璃微纳流控芯片的对准装配为示范...     

Si基微纳集成光波导的理论设计

提出了一种宽度从微米到亚微米、深亚微米、再到纳米级渐变的微纳集成结构光波导,并通过理论分析和模拟计算得到了基于Si基半导体材料的微纳集成光波导参数.其制作工艺非常简单,插入损耗在1～2.5dB之间.这种微纳集成光波导不但可解决芯径为10μm的单模光纤与纳米量级的光子晶体波导器件间的光对接、耦合和互连等难题,还可缩小光波导器件芯片的单元尺寸,有利于提高器件的集成度.为光电子器件向纳米光子集成方向的发展提供了新途径,为新一代全光通信用微纳新原理光电子器件及功能集成的发展提供了新思路.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.