CMOS／SOI的高温特性分析

采用ＳＩＭＯＸ和ＢＥＳＯＩ材料制作了ＣＭＯＳ倒相器电路，在２５￣２００℃的不同温度下测量了ＰＭＯＳ和ＮＭＯＳ的亚阈特性曲线，实验结果显示，薄膜全耗尽ＩＭＯＸ器件的阈值电压和泄漏电流随温度的变化小于厚膜ＢＥＳＯＩ器件。     

降低聚合物稳定蓝相液晶显示器驱动电压的一种方法

聚合物稳定蓝相液晶显示器存在驱动电压高和"磁滞效应"的缺点,是其应用之路上的难题。本文在深入研究蓝相液晶显示器中所使用的各种材料介电常数的基础上,结合电动力学中电介质中的电场和电位移之间关系的知识,解释了蓝相液晶显示器驱动电压高的原因为聚合物材料和绝缘层材料的介电常数远低于蓝相液晶材料的介电常数。研究中发现提高聚合物材料和绝缘层材料的介电常数,将会明显降低聚合物蓝相液晶显示器驱动电压。理论和模拟结果表明:当聚合物材料和绝缘层的介电常数达到蓝相液晶的平均介电常数,该聚合物稳定蓝相液晶显示器的驱动电压降低一半。研究结果将对聚合物稳定蓝相液晶显示器的产业化应用起到促进作用。     

基于多重掺杂的高科尔常数聚合物稳定蓝相液晶

聚合物稳定蓝相液晶具有亚毫秒级响应速度,光学各向同性及无需配向工艺等特点,在显示及光子器件领域有广泛的应用。本文研究了一种基于聚合物稳定蓝相液晶的多重聚合物材料掺杂系统。聚合物稳定蓝相液晶的驱动电压可以通过掺杂N-乙烯吡咯烷酮(NVP)和聚苯胺氧化石墨烯(G-PANI)得到大幅度的降低。经过优化掺杂物的配比,多重掺杂的聚合物稳定蓝相液晶材料的科尔常数被提高了68%,并且不会对材料的响应时间、磁滞及残留双折射产生负面影响。     

一种新型结构的LB膜化学场效应晶体管的气敏特性研究

合成了新型的有机半导体ＬＢ膜气敏材料（ＣＯＴＤＭＡＰＰ），其ＬＢ多层膜拉制在场效应晶体管上，形成了具有ＬＢ－ＯＳＦＥＴ结构的化学场效应晶体管（ＣｈｅｒｎＦＥＴ），该器件置于ＮＯ２，ＮＨ３，ＣＯ和Ｈ２Ｓ等有害气体中，结果表明在ＮＯ２气氛中元件漏电流ＩＤＳ发生变化，并可检测到２ｐｐｍ的ＮＯ２．这种器件的气敏特性在于ＦＥＴ的电流放大作用及ＬＢ膜的有序性的影响．     

一种新型的聚合物网络胆甾液晶显示器

在胆甾液晶材料中掺入少量的聚丙烯类单体材料制作了一种新型的聚合物网络胆的液晶显示器。相对于传统的ＰＤＬＣ器件，这种新型显示器可以进行反模式显示，零电场时呈透明态，加电场呈散射态．而且还具有非常宽阔的视角特性。文中报道了器件的制作方法以及聚合物网络对器件电光特性的影响，并且对该器件的应用前景作了简要介绍。     

《液晶与显示》征稿简则

正1.本刊征集有关液晶、聚合物、胶体等软物质和各类显示材料及制备方法、液晶物理、生物液晶、液晶非线性光学、液晶显示、等离子体显示、阴极射线管显示、发光二极管显示、有机电致发光显示、场发射显示、微显示、真空荧光显示、电致变色显示及其他显示、各类显示器件物理和制作技术、各类显示新型模式和驱动技术、显示技术应用、显示材料和器件的测试方法与技术、各类显示器件的应用等研究论文。2.本刊设有特邀报告、材料物理和化学、器件制备技术及器件物理、器件驱动与控制、成像技术与图像处理等栏目。     

《液晶与显示》征稿简则

正1.本刊征集有关液晶、聚合物、胶体等软物质和各类显示材料及制备方法、液晶物理、生物液晶、液晶非线性光学、液晶显示、等离子体显示、阴极射线管显示、发光二极管显示、有机电致发光显示、场发射显示、微显示、真空荧光显示、电致变色显示及其他显示、各类显示器件物理和制作技术、各类显示新型模式和驱动技术、显示技术应用、显示材料和器件的测试方法与技术、各类显示器件的应用等研究论文。2.本刊设有特邀报告、材料物理和化学、器件制备技术及器件物理、器件驱动与控制、成像技术与图     

《液晶与显示》征稿简则

<正>1.本刊征集有关液晶、聚合物、胶体等软物质和各类显示材料及制备方法、液晶物理、生物液晶、液晶非线性光学、液晶显示、等离子体显示、阴极射线管显示、发光二极管显示、有机电致发光显示、场发射显示、微显示、真空荧光显示、电致变色显示及其他显示、各类显示器件物理和制作技术、各类显示新型模式和驱动技术、显示技术应用、显示材料和器件的测试方法与技术、各类显示器件的应用等研究论文。2.本刊设有特邀报告、材料物理和化学、器件制备技术及器件物理、器件驱动与控制、成像技术与图像处理等栏目。     

蓝相液晶光电特性研究

蓝相液晶由于其特有的扭曲双螺旋结构,具有快速响应特性与宏观上的光学各向同性。通过聚合物稳定的方法,可以提升其热稳定性,但是也导致了驱动性能下降,磁滞效应增强等问题。文章通过研究手性掺杂和聚合物网络对蓝相液晶材料体系的作用以及不同温度下的磁滞效应,探索蓝相液晶器件光电特性的影响因子,为改善蓝相液晶材料的光电特性提供理论上的支持。     

《液晶与显示》征稿简则

<正>1.本刊征集有关液晶、聚合物、胶体等软物质和各类显示材料及制备方法、液晶物理、生物液晶、液晶非线性光学、液晶显示、等离子体显示、阴极射线管显示、发光二极管显示、有机电致发光显示、场发射显示、微显示、真空荧光显示、电致变色显示及其他显示、各类显示器件物理和制作技术、各类显示新型模式和驱动技术、显示技术应用、显示材料和器件的测试方法与技术、各类显示器件的应用等研究论文。2.本刊设有特邀报告、材料物理和化学、器件制备技术及器件物理、器件驱动与控制、成像技术与图像处理等栏目。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.