自适应局部邻域特征点提取和匹配的点云配准

点云配准是三维重建的关键技术之一。针对点云匹配中迭代最近点算法(ICP)速率低、对初始位置要求高的问题,提出了一种基于自适应局部邻域特征点提取和匹配的点云配准方法。首先根据局部表面变化因子与平均变化因子的大小关系,自适应地提取特征点;其次利用快速点特征直方图（FPFH）综合描述每个特征点的局部信息,结合随机抽样一致性（RANSAC）算法实现粗配准;最后根据得到的初始变换矩阵和基于特征点的ICP算法实现精配准。对斯坦福数据集、含噪声的点云以及场景点云进行配准实验,实验结果表明:所提出的特征点提取算法能高效地提取点云的特征;相比于其他特征点检测方法,所提方法在粗配准中的配准精度和配准速度更高,且抗噪性能更好;与ICP算法相比,基于文中特征点的ICP算法在斯坦福数据集和场景点云中的配准速度提升了约10倍,在含噪声的点云中,能根据所提取的特征点高效地进行配准。该研究为提高三维重建和目标识别的匹配效率提供了一种高效的方法。     

邻域多维度特征点结合相关熵的点云配准北大核心CSCD

针对传统点云配准中存在配准精度低、耗时长的问题,提出一种邻域多维度特征点结合相关熵模型的点云配准方法。首先根据邻域点的加权投影信息、表面曲率和法向量夹角提取特征点;其次用二值化的方向直方图描述子(B-SHOT)进行特征描述与匹配,然后利用刚性距离约束剔除误匹配,并通过随机采样一致性算法获取初始变换矩阵;在精配准阶段,以点到面的距离为准则双向搜索对应点,并通过多种几何特征约束剔除误匹配点对,最后迭代最大相关熵模型的目标误差函数完成精配准。实验结果表明,本文算法比迭代最近点算法(ICP)的配准精度提高了15%~97%、配准效率提高了约90%。     

基于ISS特征点结合改进ICP的点云配准算法北大核心CSCD

针对点云配准时间长、收敛缓慢、对应点匹配易错等缺点,提出一种基于内部形态描述子(ISS)特征点结合改进迭代最近点(ICP)的点云配准算法。首先采用ISS算法进行点云特征提取,并以快速点特征直方图进行特征描述,然后通过采样一致性算法完成点云的初始配准,使两片不同角度点云获得一个相对较好的初始位姿,最后通过k维树近邻搜索法加速对应点对的查找,以提高点云ICP精细配准效率。实验结果表明,与传统配准算法相比,该算法配准精度高,而且执行速度快。     

基于快速点特征直方图的三维点云配准算法

三维点云配准算法是三维场景模型重建的重要研究部分。针对传统迭代最近点算法(ICP)对点云进行配准时容易陷入局部最优的问题,本文研究了基于局部特征点改进的ICP算法。文章分析了点特征直方图(PFH)和快速点特征直方图(FPFH)两种局部特征点,得出了FPFH具有比PFH更低的时间复杂度的结论,因此通过FPFH特征描述子对两片初始点云进行粗配准,使其具有较好的初始位姿,最后用经典的ICP算法进行精配准。实验结果表明,基于FPFH特征点改进后的ICP算法能提供较好的点云初始位姿,一定程度上避免了配准时陷入局部最优的问题,比传统ICP算法具有更好的配准效果。     

基于WHI及ICP的点云配准算法

针对两步点云配准中精度差、计算效率低、易受噪声干扰的问题,提出一种基于WHI特征描述符结合改进的ICP点云配准算法。首先,对大数据量的点云通过ISS算法提取特征点集作为配准点云;然后,计算特征点云的WHI特征描述符,利用随机采样一致性算法完成粗配准;最后,基于安德森加速迭代ICP算法对粗配准点云进行精确配准。通过多组点云数据集对所提算法进行验证,实验表明,该算法配准精度高、速度快,在含有噪声数据集的优势更明显。在不同的点云模型下,所提算法的配准效率提高2倍以上,在噪声环境下具有一定的鲁棒性。     

结合形态描述和直方图特征改进的点云配准北大核心CSCD

针对点云配准过程中配准效率和精度无法兼得的问题,提出一种将内部形态描述(ISS)特征点和二进制方向直方图(BSHOT)特征描述符相结合的改进的点云配准算法。该算法先采用体素格网下采样和ISS算法提取特征点;然后通过二进制的方向直方图(BSHOT)特征描述符结合汉明距离和随机采样一致性算法(RANSAC)进行粗配准;最终利用改进的ICP算法进行精确配准。利用多组点云数据对该方法进行验证。结果表明,在相同条件下,改进后的算法在配准时间和配准精度上均优于其他算法。说明所提出的方法具有较高的配准效率与精度,且随着点云数量的增多,配准精度的提高效果会增强。     

一种多模式融合的激光点云配准算法

针对经典迭代最邻近点(iterative closest point,ICP)算法在三维激光点云配准领域内,存在收敛速度慢、配准误差大、配准效率低的问题,提出了一种基于法向量夹角特征和边界旋转角相融合的改进ICP算法。利用点云区域层划分将点云分成若干独立单元方格,搜寻方格的法向量夹角特征关键点,结合点面曲率对应关系形成初始匹配点对,随后引入距离约束函数,估算边界旋转角和相关动态迭代系数,自动优化刚性变换参数。实验结果表明,与传统ICP算法相比,改进后的算法配准误差降至0.3%以下,配准时间减少50%以上,有效提升点云配准效率。     

基于3DSIFT和BSHOT特征的点云配准方法

针对点云配准过程中易产生错误匹配点、配准时间长、配准精度低等问题。提出了基于三维尺度不变特征变换(3DSIFT)关键点检测方法,结合二进制方向直方图描述子(BSHOT)构建点云匹配对的配准方法。该方法首先利用差分高斯模型在三维尺度空间上检测SIFT关键点,其次在关键点的邻域构建局部坐标系来计算SHOT描述子,并将SHOT描述子转化为二进制描述符。然后利用随机采样一致性算法去除误匹配的点云,初步估计点云的变换矩阵。最后在精配准上利用ICP算法估计最优的变换矩阵。在数据集的实验中验证了本文算法的快速性,同时在两个点云重叠率较低时,配准精度较高。     

基于改进ICP的复杂机械零件测量点云配准方法

点云配准是基于机器视觉进行复杂机械零件三维非接触精密测量的关键环节。针对传统迭代最近点(iterative closest point, ICP)算法对初始位置依赖性强,迭代收敛速度慢,错误对应点对多,难以满足大批量复杂机械零件测量点云配准效率和精度要求的问题,提出了一种基于ISS-FPFH(intrinsic shape signature-fast point feature histogram)特征结合改进ICP的复杂机械零件测量点云配准方法。为了减少点云配准数量,并保留点云表面原来的细微特征,提出了基于重心邻近点的体素滤波器对点云进行下采样预处理。为解决传统ICP算法因合适初始位置难以确定而导致多视角测量点云配准失败的问题,采用了基于ISS-FPFH特征的采样一致性初始配准(sample consensus intial alignment, SAC-IA)算法进行粗配准。为解决传统ICP算法迭代收敛速度慢、错误对应点对多的问题,提出结合法向量夹角约束的点到平面ICP算法进行精配准。以斯坦福大学的bunny点云模型为对象,验证了本文提出方法对噪声点云的鲁棒性。以常见的复杂机械零...     

基于Kinect传感器的三维点云配准优化

针对目前三维点云配准中传统ICP(Iterative Closest Point)算法存在的速度慢、精度低的问题。采用微软Kinect2.0深度传感器从真实的场景中获取目标物体的点云数据,通过点云分割、滤波、下采样等预处理工作,确保点云配准质量。在点云的粗配准中,使用特征点采样一致性算法,使点云获得更好的初始位置,为精配准创造了良好的初始条件。在点云的精配准中,提出一种利用线性最小二乘法优化的点到面ICP算法。实验结果表明,改进后算法的均方根误差为0.788 mm,时间为56.31 ms。与基于尺度不变特征变换的ICP算法和特征点采样一致性改进ICP算法相比,改进后的算法配准精度分别提高了30.9%和33.6%,速度提高了18.9%和32.1%。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.