一种复合多基地雷达密集多目标检测的新方法

密集多目标探测是当前雷达技术领域面临的前沿课题和紧迫任务。该文提出了一种T/R-R2复合多基地雷达信号融合方法,建立了单基地雷达接收机和多基地雷达接收机的目标回波信号模型,针对3维空间,基于距离信息提出了复合多基地雷达信号融合模型,采用最大似然法对密集多目标进行检测,分析了信噪比、目标数量、目标起伏、检测门限以及复合多基地雷达几何配置对检测性能的影响。蒙特卡洛仿真结果表明该文方法对密集多目标的检测是有效的。Swerling II型目标为本文推导的假设条件,但在Swerling 0和IV型目标起伏条件下该文的检测算法仍然有效。     

基于MIMO噪声雷达的高速运动目标检测

针对传统体制雷达对高速运动目标不能进行长时间有效相参积累检测问题,该文提出了一种基于MIMO噪声雷达的高速运动目标检测方法。该方法利用MIMO噪声雷达在短时间内输出的多路回波数据进行相参并行处理来取代回波数据的长时间相参积累检测,以避免距离走动,径向速度变化以及反射截面积(RCS)快起伏等非平稳因素对目标检测的影响,有效实现了多个高速运动目标的无模糊检测。仿真结果验证了MIMO噪声雷达在高速运动目标检测方面的优越性。     

MIMO雷达双门限恒虚警检测

由于MIMO雷达的多通道特性,使得MIMO雷达各接收天线之间需要进行大量的数据传输。在MIMO雷达中应用双门限检测可以使数据传输量大大降低。本文在单元平均恒虚警检测器的基础上,提出了一种MIMO雷达双门限恒虚警检测器,设计了MIMO雷达双门限恒虚警检测器的结构,将其检测性能和单门限恒虚警检测器进行了对比,分析了MIMO雷达双门限检测器在多目标环境下的检测性能。仿真结果表明在MIMO雷达中应用双门限检测具有结构简单,数据传输量低等特点,在单目标和多目标环境中,双门限恒虚警检测器的检测性能均优于单门限恒虚警检测器。      

基于距离信息的复合双基地雷达密集多目标检测

对密集多目标的探测是当前雷达技术领域所面临的前沿课题和紧迫任务.本文提出了一种基于距离信息的T/R-R复合双基地雷达信号融合方法,该方法建立了单基地雷达接收机和双基地雷达接收机的目标回波信号模型,针对二维平面,基于距离信息提出了复合双基地雷达信号融合模型,采用最大似然法对密集多目标进行检测,并分析了信噪比、目标数量、目标起伏、检测门限以及复合双基地雷达几何配置对检测性能的影响.针对不同想定进行了仿真实验,蒙特卡洛仿真结果表明本文方法对密集多目标的检测是有效的.通过理论分析和仿真实验发现,目标到两个接收机的距离变化以及不同距离单元中的目标干扰对检测的影响比较小,影响密集多目标检测的主要因素包含信噪比、目标数量、目标起伏、同一距离单元内的角度不可分辨目标的干扰以及检测门限;另外,Swerling Ⅱ型目标为本文推导的假设条件,但在Swerling 0 和Ⅳ型目标起伏条件下本文的检测算法仍然有效.     

水面杂波背景的统计MIMO雷达检测方法研究

传统雷达的检测性能受到雷达目标闪烁特性的影响,而多输入多输出(MIMO)雷达能够利用雷达目标的起伏特性,提高对感兴趣目标的检测性能。针对两种(K分布和IG-CG分布)水面杂波背景下的MIMO雷达检测算法,综合阐述了算法的实现过程,并对检测效果进行了仿真分析,结果表明:MIMO检测对不同情况的水面杂波背景具有良好的检测性能;K分布或IG-CG分布杂波背景中,当天线数目较少时,增加发射天线数的检测器性能比增加接收天线数的性能好。上述结论为MIMO雷达对水面背景中目标检测的工程化应用提供了参考。     

网络雷达对抗系统对x2分布目标的检测性能分析

在奈曼-皮尔逊检测准则下,以目标截面积的统计模型服从x2分布为基础,着重研究了有源MIMO模式网络雷达对抗系统在多脉冲条件下的检测性能,给出了慢起伏和快起伏x2分布目标模型下虚警概率和检测概率表达式,并对不同条件下的检测性能进行了仿真分析.理论与仿真分析表明,有源MIMO模式网络雷达对抗系统对慢起伏x2分布目标的检测性能优于快起伏x2分布目标;同时,随着脉冲积累数和自由度的增加,慢起伏与快起伏x2分布目标的检测性能都得到了改善.     

网络雷达对抗系统对网络雷达对抗系统对χ2 分布目标的检测性能分析分布目标的检测性能分析

在奈曼-皮尔逊检测准则下,以目标截面积的统计模型服从χ2分布为基础,着重研究了有源MIMO模式网络雷达对抗系统在多脉冲条件下的检测性能,给出了慢起伏和快起伏χ2分布目标模型下虚警概率和检测概率表达式,并对不同条件下的检测性能进行了仿真分析。理论与仿真分析表明,有源MIMO模式网络雷达对抗系统对慢起伏χ2分布目标的检测性能优于快起伏χ2分布目标;同时,随着脉冲积累数和自由度的增加,慢起伏与快起伏χ2分布目标的检测性能都得到了     

Esprit算法在单基地MIMO雷达中的应用

多输入多输出（MIMO）雷达是近年来提出的一种新体制雷达,由于发射正交信号,不同位置目标的回波信号相互独立,因此在DOA估计和目标分辨方面,比传统雷达具有较大优势。文中将Esprit算法应用于单基地MIMO雷达系统中,并对两种结构的MIMO雷达分别进行一维和二维DOA估计,仿真证明了算法的优越性。     

多频噪声双基地MIMO雷达相参信号处理算法

多频噪声多输入多输出(MIMO)雷达各发射天线发射不同频率噪声信号,所以同一目标的不同频率回波有不同的多普勒频率。为了将各频率回波信号进行相参合成处理,充分发挥MIMO噪声雷达在目标检测性能上的优势。基于Keystone变换技术,提出一种适合多频噪声MIMO雷达的相参处理算法。所提算法对不同频率的回波信号进行重采样,即Keystone变换,使得不同频率的回波具有相同的多普勒频率,然后进行相参合成检测处理。     

慢起伏目标的多输入多输出雷达检测性能分析

MIMO雷达是一种新体制雷达.相比传统雷达,MIMO雷达在探测能力上有很大提高.以雷达截面积的统计模型服从X2分布为基础,理论分析了慢起伏目标情况下,MIMO雷达的检测性能.并考虑了X2分布的两个特例,Swerling Ⅰ和Swerling Ⅲ目标模型下,MIMO雷达与传统相控阵雷达的检测性能比较.理论分析和数字试验得出,在高信噪比情况下,MIMO雷达的检测性能有很大改善.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.