基于加载线型Ka频段的五位数字移相器

数字移相器广泛应用于相控阵雷达中,本文采用一前一后加载支线的方法设计了 11.25°,22.5°和45°移相单元,以3 dB支线耦合器的形式设计90°和180°移相单元,在Ka频段研制出五位数字移相器。该移相器在30 GHz~31 GHz工作频带内,各移相单元实测相移误差最大为6.5°,最小为0.2°;插入损耗最大为11.8 dB,最小为8.6 dB;输入驻波比小于2,整个电路尺寸为110 mm×55 mm×25 mm。     

一种基于电调移相器的可重构天线

设计并实现了一种基于反射式移相器的极化可重构天线。该天线使用一对交叉摆放的领结型振子作为辐射单元,并在馈电网络中通过两路移相器调整双馈端口间的相位差实现线极化、左旋圆极化和右旋圆极化模式之间的切换。通过加载匹配枝节的方法扩展了反射式移相器的移相范围,提高了移相器的移相精度,降低了天线圆极化模式带内的轴比。所设计天线的中心频率为5.4 GHz,在线极化模式下10 dB 阻抗带宽为990 MHz,在圆极化模式下10 dB 阻抗带宽分别为760 MHz 和850 MHz,3 dB 轴比带宽分别为510 MHz和480 MHz。该天线在频带内具有稳定的波束方向图,其平均增益为5.3 dB,并且具有27 dB 的主极化-交叉极化隔离。最终的实测结果与仿真结果基本一致,表明该天线具有良好的性能。     

一种高精度宽带幅相控制多功能MMIC

利用0.15μm GaAs E/D PHEMT工艺研制了一款C-X波段多功能MMIC芯片,集成了2个驱动放大器、1个6位数控移相器、1个6位数控衰减器、4个单刀双掷开关、数字驱动器、均衡器和增益调节电路。其中移相器基于新颖的"非折叠式"兰格耦合器、改进的反射型负载,具有移相精度高、插入损耗小等优点,并内部集成对应的数字逻辑驱动电路,简化使用。多功能芯片测试结果表明:工作频带内移相误差均方根值(RMS)在发射和接收模式下均小于3°,所有移相态增益变化RMS小于0.3dB;衰减误差RMS小于0.5dB,附加调相从-4°~+6°。发射支路增益大于4dB,输出P1dB大于12dBm;接收支路增益大于3dB,输出P1dB大于10dBm。     

Ku波段五位数字移相器的设计

本文设计了11.4～12.8GHz频段内五位数字移相器的电路拓扑.采用GaAs MESMET技术建立封须开关模型,对高/低通网络型网络拓扑及场效应管嵌入桥π型电路的移相器拓扑进行仿真,结果表明,当中心须率在12GHz时,达到精确的移相度数,在整个频带内插入损耗小于2dB,移相精度(RMS)小于30,移相前后电压驻波比小于1.35.     

基于开口谐振环的毫米波差分移相器设计

该文提出了一种工作于30~32 GHz的毫米波差分移相器，其尺寸为30 mm×18 mm×0.127 mm。该移相器以微带线为基础进行设计，由中心圆环及一对开口谐振环(SRR)共同组成。通过改变中心圆环的半径大小实现在工作频段内的S参数优化。以参考线的输出相位为基准，通过改变开口谐振环半径依次实现22.5°、45°、90°的差分移相。结果表明，在所设计的频段内，该移相器的回波损耗小于-10 dB，插入损耗小于1.4 dB，仿真最大移相误差小于5°。该移相器结构简单，便于制造。通过实物样品测试，验证了其仿真结果的可靠性。     

基于单一左、右手传输线的宽带180°移相功分器

分析了单一左、右手传输线的电路特性,并利用其非线性相位特性,设计了一种平面、低损耗的宽带180°移相功分器。首先通过调节单一左、右手传输线的结构参数,并与传统传输线进行相位比较,在单一左、右手传输线的通带内实现45°相位差,然后将4个传输线单元级联构建了180°移相器,最后采用180°移相器设计了相位差为180°移相功分器。移相功分器的测试结果表明,在3~8.3GHz内,反射系数小于-10dB,输出端口间的隔离度大于17dB,输出端口间的幅度差小于0.6dB,相位差为180°±5°。该结构性能优良,制作成本低,适用于宽带天馈系统。     

X波段4bit MMIC数字移相器的设计与实现

基于WIN 0.25 μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计并制备了一款X波段4 bit单片微波集成电路(MMIC)数字移相器.22.5°和45°移相单元采用开关滤波型拓扑结构,90°和180°移相单元采用高低通滤波型拓扑结构.对拓扑结构工作原理进行分析,并采用ADS2014软件完成电路的电磁仿真及优化.测试结果表明,该4 bit MMIC数字移相器获得了优良的宽带性能,且与仿真结果吻合良好.在8～ 13 GHz频带内,移相器的均方根(RMS)相位精度误差小于6.5°,插入损耗优于-6.8 dB,RMS插入损耗波动低于0.5 dB,输入回波损耗优于-13 dB,输出回波损耗优于-9.5 dB.该4 bit MMIC数字移相器在相对带宽为47％的X频段内性能优良,适用于有源相控阵雷达等通信系统中.     

X波段GaN五位数字移相器MMIC的设计

采用0.5μm GaN HEMT工艺设计了X波段五位数字移相器的单片微波集成电路(MMIC),描述了移相器的设计过程,并进行了版图电磁仿真。该移相器采用高低通滤波器型网络和加载线型结构。利用电路匹配技术设计移相器电路的开关结构,将GaN器件的插入损耗从14 dB降至1 dB。版图仿真结果表明,在9.2 GHz~10.2 GHz频带范围内,均方根移相误差小于3.5°,插入损耗典型值为17.4 dB,回波损耗小于-12 dB,版图尺寸为5.0 mm×4.7 mm。     

基于微机电系统开关的四位移相器设计

为了解决相控阵雷达小型化和低损耗的问题,设计了一个工作频率为2.2 GHz的射频微机电系统(MEMS)四位开关线型移相器。首先分析了直接接触式MEMS串联开关的插入损耗和隔离度,并得到仿真结果。在此基础上设计了基于该开关的移相范围为0~180o的四位移相器电路,相移量为12o每步。采用HFSS软件对其进行仿真,得到移相精确度、插入损耗和隔离度等关键结果,移相器工作在2.2 GHz时,隔离度大于20 dB,插入损耗小于1 dB。该设计与传统移相器相比体积更小,且具有更小的插入损耗和更大的隔离度。     

一种基于65nm CMOS工艺的33.5～37.5GHz有源矢量合成型移相器

基于65 nm CMOS工艺设计了一款33.5～37.5 GHz的6 bit有源矢量合成型移相器(VSPS)。该移相器采用Lange类型的90°耦合器作为I/Q信号发生器，其中的电感采用8字形电感实现；此外，矢量合成部分采用电流合成结构，使芯片面积更加紧凑。后仿真结果显示，该移相器覆盖360°移相范围，对于64种移相角度状态，其整个工作频带下的相位均方根(RMS)误差约为0.33°～3.20°,移相附加增益幅度约为-8.38～-4.89 dB,其RMS误差小于0.59 dB,噪声系数约为12.55～15.55 dB,输入反射系数小于-15 dB,输出反射系数小于-7.9 dB,在33.5、35.5和37.5 GHz频率下，其1 dB压缩点输入功率分别为-1.38～0.96、-1.13～0.75和-0.30～1.40 dBm。该移相器核心电路面积仅约为0.11 mm²,在1.2 V的电源电压下，消耗14.6 mW的直流功率，具有面积紧凑、功耗较低、插入损耗适中且精度较高的优势，有利于相控阵系统大规模集成和应用。     

A Ku‐Band 5‐Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation

This paper describes the performance of a Ku‐band 5‐bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5‐bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than 7.5° root‐mean‐square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5‐bit phase shifter, the insertion losses were 8.2 ± 1.4 dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5‐bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm × 1.65 mm. The packaged phase shifter demonstrated a phase error of less than 11.3° RMS, measured insertion losses of 12.2 ± 2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm × 6.20 mm.     

一种6~18 GHz宽带高精度有源移相器

设计了一种6 bit 6~18 GHz工作频段的宽带高精度有源移相器。片上集成了输入无源巴伦、逻辑编码器、RC多相滤波器、矢量合成单元、数控单元等。该移相器的设计采用55 nm CMOS工艺实现,芯片尺寸为1.29 mm×0.9 mm,移相器核心尺寸为1.02 mm×0.58 mm。后仿结果表明,在6~18 GHz频率范围内,增益误差RMS值小于1 dB,相位误差RMS值小于0.75°,输入回波损耗、输出回波损耗分别小于-8.5 dB、-8.9 dB,芯片总功耗为20.7 mW。该6 bit移相器的相对带宽为100%,覆盖C、X和Ku波段,适用于雷达探测等领域。     

A Ka-Band GaAs Monolithic Phase Shifter

The design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.     

Design and performance of a Ka-band monolithic phase shifterutilizing nonresonant FET switches

This paper describes design consideration and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches. The switches show broad-band on/off characteristics up to 60 GHz without using inductors; thus, robust circuit design is possible for a switched-line phase shifter. To determine circuit topology, we introduce a schematic design approach. As a result, desired phase shift as well as good matching characteristics can be realized. The developed 4-bit monolithic phase shifter demonstrates an overall phase deviation less than 5° rms and an insertion loss variation less than 0.65 dB rms from 33 to 35 GHz. For all 16 states, the insertion loss is measured to be 13.1±1.1 dB and the VSWR is less than 1.6. The chip size of the monolithic phase shifter is 2.5 mm×2.2 mm     

开关线型四位数字MEMS移相器

介绍了一种基于射频微机械串联开关设计的开关线型四位数字微机电系统(M icro-e lectrom echan ica lSystem s以下简称M EM S)移相器。该移相器集成了16个RF M EM S开关,使用了13组四分之一波长传输线和M IM接地耦合电容,有效地使开关的驱动信号和微波信号隔离,串联容性开关设计有效地降低了开关的启动电压。使用低温表面微机械工艺在360μm厚的高阻硅衬底上制作移相器,芯片尺寸4.8 mm×7.8 mm。移相器样品在片测试结果表明,频点10.1 GH z,22.5°相移位的相移误差为±0.4,°插损2.8 dB;45°位的相移误差为±1.1,°插损2.0 dB;在X波段,对16个相移态的测试结果表明,移相器的插入损耗小于4.0 dB,驻波比小于2.4,开关驱动电压为17~20 V。     

A novel MMIC X-band phase shifter

A novel configuration for monolithic phase shifters is presented. The layout and fabrication of a single chip, four-bitX-band phase shifter, measuring 3.7 × 2.3 mm, is described in some detail. The first samples to be assessed exhibited full 360 ° coverage at the design frequency, operation throughout X-band, good matches, and an insertion loss less than 5 dB.     

A production ready, 6-18-GHz, 5-b phase shifter with integratedCMOS compatible digital interface circuitry

A producible, high-yield, monolithic 6-18-GHz, 5-b phase shifter with integrated standard CMOS compatible digital interface circuitry has been developed for use over the -55 to +90°C temperature range. Differential phase shift is achieved using high-pass and low-pass filter structures. The integrated digital interface circuitry produces complementary outputs that are used to bias the phase-shifter bits. The integration of the digital interface circuitry, made with microwave FETs, reduced the phase-shifter bit control bias lines by a factor of 2. The phase shifter was fabricated at both Raytheon's and Texas Instruments' GaAs foundries in production quantities using a standard microwave process. Complete on-wafer RF tests were performed to screen the phase-shifter circuits and determine electrical yield. The phase shifter has an r.m.s. phase error <10° from 6.5 to 18 GHz, maximum insertion loss of 14 dB, and an r.m.s. amplitude error <0.8 dB over the 6-18-GHz band