X波段GaN五位数字移相器MMIC的设计

采用0.5μm GaN HEMT工艺设计了X波段五位数字移相器的单片微波集成电路(MMIC),描述了移相器的设计过程,并进行了版图电磁仿真。该移相器采用高低通滤波器型网络和加载线型结构。利用电路匹配技术设计移相器电路的开关结构,将GaN器件的插入损耗从14 dB降至1 dB。版图仿真结果表明,在9.2 GHz~10.2 GHz频带范围内,均方根移相误差小于3.5°,插入损耗典型值为17.4 dB,回波损耗小于-12 dB,版图尺寸为5.0 mm×4.7 mm。

Design of an X-band GaN 5-bit Digital Phase Shifter MMIC

An X band 5-bit Digital phase shifter monolithic microwave integrated circuit (MMIC) is designed using 0.5 um GaN HEMT process. The design procedure is described, and the layout electromagnetic simulation is operated. The phase shifter is based on the synthetic design of a high-pass/low-pass filters network and the loaded-line structure. A switch topology of the phase shifter is designed by matching network, which reduced the loss insertion of GaN device from 14dB to 1dB.The layout simulation result shows that the phase shifter has achieved root mean square (RMS) phase shift error less than 3.5 degree, the average insertion loss of 17.4dB, and the return loss better than -12dB within 9.2~10.2Ghz bandwidth.The layout size is 5.0*4.7mm2.