射频锁相环型频率合成器的CMOS实现

本论文实现了一个射频锁相环型频率合成器,它集成了压控振荡器、双模预分频器、鉴频鉴相器、电荷泵、各种数字计数器、数字寄存器和控制电路以及与基带电路的串行接口.它的鉴频鉴相频率、输出频率和电荷泵的电流大小都可以通过串行接口进行控制,还实现了内部压控振荡器和外部压控振荡器选择、功耗控制等功能,这些都使得该频率合成器具有极大的适应性,可以应用于多种通信系统中.该锁相环型频率合成器已经采用0.25μm CMOS工艺实现,测试结果表明,该频率合成器使用内部压控振荡器时的锁定范围为1.82GHz~1.96GHz,在偏离中心频率25MHz处的相位噪声可以达到-119.25dBc/Hz.该频率合成器的模拟部分采用2.7V的电源电压,消耗的电流约为48mA.     

具有改进型自适应频率校准的快速锁定频率综合器

本文介绍了一种具有改进型自适应频率教准（AFC）模块的快速锁定锁相环型频率综合器,该综合器使用0.18ucm CMOS工艺实现。AFC的工作模式有两种：频率校准模式和存储/加载模式。频率校准模式使用了一种新型的鉴频器可以把频率校准时间缩短到16uS。在存储/加载模式下,通过保存频率校准后的结果并且在需要时加载,AFC可在1uS内使压控振荡器（VCO）的频率恢复为校准过的频率点。测试结果显示,VCO的谐振范围为620~920MHz;在环路带宽为10kHz时,锁相环带内噪声为-82dBc/Hz;频率校准模式下的锁定时间为20uS而存储/加载模式下为5uS;在1.8V供电下,锁定后频率综合器的工作电流为12mA。     

一个自调谐,自适应的1.9GHz分数/整数频率综合器

本文提出了一个具有自调谐,自适应功能的1.9GHz的分数/整数锁相环频率综合器.该频率综合器采用模拟调谐和数字调谐相结合的技术来提高相位噪声性能.自适应环路被用来实现带宽自动调整,可以缩短环路的建立时间.通过打开或者关断 ΣΔ 调制器的输出来实现分数和整数分频两种工作模式,仅用一个可编程计数器实现吞脉冲分频器的功能.采用偏置滤波技术以及差分电感,在片压控振荡器具有很低的相位噪声;通过采用开关电容阵列,该压控振荡器可以工作在1.7GHz~2.1GHz的调谐范围.该频率综合器采用0.18 μ m,1.8V SMIC CMOS工艺实现.SpectreVerilog仿真表明:该频率综合器的环路带宽约为100kHz,在600kHz处的相位噪声优于-123dBc/Hz,具有小于15 μ s的锁定时间.     

一种集成新型相位切换预分频器和高品质因素压控振荡器5 GHz CMOS频率综合器

本文实现了一种集成新型相位切换预分频器和高品质因素压控振荡器的锁相环频率综合器。该频率综合器在考虑噪声性能的基础上进行系统参数设计。预分频器采用了一种不易受工艺偏差影响的相位切换方式。对压控振荡器的电感开关电容和压控电容的品质因素进行了优化。与其他文献相比,该频率综合器使用相近的功耗取得更好的噪声性能。本文提出的频率综合器采用SMIC0.13微米工艺流片,芯片面积为11502500 μm²。当锁定在5 GHz时,其功耗在1.2V电源电压供电时为15mA。此时,1MHz频偏处相位噪声为-122.45dBc/Hz。     

应用于射频收发机的低功耗频率综合器

基于0.18μm 1P6M CMOS工艺,设计并实现了一种用于工作在2.4 GHz ISM频段的射频收发机的整数型频率综合器。频率综合器采用锁相环结构,包括片上全集成的电感电容压控振荡器、正交高频分频器、数字可编程分频器、鉴频鉴相器、电荷泵、二阶环路滤波器,为接收机提供正交本地振荡信号并驱动功率放大器。通过在PCB板上绑定裸片的方法进行测试,测试结果表明,压控振荡器的频率覆盖范围为2.338～2.495 GHz;锁定频率为2.424 GHz时,频偏3 MHz处的相位噪声为-113.4 dBc/Hz,带内相位噪声为-65.9 dBc/Hz;1 MHz处的参考杂散为-45.4 dBc,满足收发机整体性能指标的要求。在1.8 V电源电压下,频率综合器整体消耗电流仅为6.98 mA。芯片总面积为0.69 mm×0.56 mm。     

低频率电荷泵锁相环设计

设计一款音频范围内的电荷泵锁相环,采用动态D触发器鉴频鉴相器及电流舵差分输入电荷泵。压控振荡器采用了对电容充放电的形式产生震荡波形,实现低频输出。采用HHNEC BCD035工艺并用Cadence软件实现仿真,实现250 kHz频率锁定,锁定时间为80μs,锁定时相位差为75 ns且压控振荡器控制电压纹波为5 mV。     

适用于高速Δ-Σ模数转换器的功耗可配置锁相环频率综合器

本文提出了一个适用于Δ-Σ模数转换器的基于锁相环结构的频率综合器，该频率综合器使用65纳米CMOS工艺实现，频率范围为35-130和300-360兆赫兹。文中提出的频率综合器能够工作在低相位噪声模式和低功耗模式，从而满足系统要求。为了实现这两个模式的切换，片上集成了一个连接4分频器的高频LC压控振荡器和一个连接2分频器的环形压控振荡器。测试结果表明，在1.2伏电源电压下，该频率综合器在低相位噪声模式下消耗1.74毫瓦功耗，1兆频偏处的相位噪声为-132dBc/Hz，标准差周期抖动为1.12皮秒;在低功耗模式下消耗0.92毫瓦功耗，1兆频偏处的相位噪声为-112dBc/Hz，标准差周期抖动为7.23皮秒。     

一种宽带频率综合器快速自动频率校准技术

提出了一种新型快速自动频率校准技术,应用于宽带频率综合器的频带搜索和频率锁定过程。该自动频率校准模块通过直接控制频率综合器中压控振荡器(VCO)的开关电容阵列的闭合状态来调节VCO的振荡频率,实现快速锁定输出频率的目的。这种自校准技术由纯数字电路实现,校准过程只需5个时钟周期即可完成,时钟信号直接使用外部输入的参考时钟,具有算法简单、所需时钟周期少的优点。电路采用SMIC 0.18 μm CMOS工艺进行设计和验证,相比以往的校准技术,其校准时间明显减少。     

基于注入锁定的RF低功耗正交本振信号产生电路

实现了一个基于注入锁定技术的射频低功耗正交本振信号产生电路.该电路由工作于两倍频频段的压控振荡器和两个注入锁定二分频器及缓冲器构成,可以为无线收发机提供正交本振信号.通过采用数字调谐技术,压控振荡器达到了很宽的调谐范围,而通过在注入锁定二分频器中加入与压控振荡器相同的变容管和电容阵列,保证了注入锁定二分频器在整个频带范围内都能保持锁定.该正交本振产生电路采用UMC 0.18 μm CMOS工艺实现.测试结果表明,在1.9～2.3 GHz频率范围内,该电路能够提供正交本振信号.该电路采用1.8 V电源供电,消耗的电流为2.2 mA(不包含缓冲器的电流),占用芯片面积为1.56 mm2.     

400路数字频率综合器

综合器原理数字频率综合器比较复杂,本文首先说明其方块图(见图1),讨论从压控振荡器开始。压控振荡器输出频率F_0,其变化范围在20至30兆赫,该频率同时加到分频比为16的固定分频器M上,M的输出频率F_1=F_0/16。F_1加到一个800至1199的可变分频器上,该分频器是综合器的主要部分。其分频     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.