YPO4:Dy3+,Eu3+荧光粉的水热合成及白光发射

采用水热法,合成了YPO₄:xDy³⁺,0.06Eu³⁺系列荧光粉。通过X射线衍射(XRD )、扫 描电子显微镜(SEM)、电子散射能谱(EDS)、光致发光(PL)谱和长余辉光谱,分别对样品的物 相、结构和PL进行了表征。 XRD检测表明,合成的样品属四方晶系;荧光光谱测试表明,在234nm紫外光激发下, YPO₄:xDy³⁺,0.06Eu³⁺的 发射光谱呈现Eu3+ 的⁵D₀→⁷F₁(592nm,橙光)和 ⁵D₀→ ⁷F₂(618nm,红光) 的发光峰;而在354nm的激发波长下,YPO₄:0.06Dy³⁺,0.06Eu³⁺的发射光谱 呈现Dy³⁺的4F9/2→⁶H15/2(486nm、蓝 光)和⁴F9/2→⁶H13/2(575nm、黄光)的发光 峰,以及Eu³⁺的⁵D₀→⁷F₁(592nm、 橙光)和⁵D₀→⁷F₂(619nm、红光 )的发光峰。对荧光 衰减谱的双参数拟合证实了Dy³⁺→Eu³⁺能量 传递的存在。色坐标图显示,在234nm紫外光激发下,YPO₄:0.05Dy ³⁺,0.06Eu3+ 是很好的近紫外光激发下的白色荧光粉。     

ATS软件符号定义表

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Cs(7DJ)+H2的反应与非反应碰撞转移截面的测定

利用激光泵浦-吸收技术,研究了在样品池中的Cs(7D_J)+H₂→CsH[X¹∑+(v″=0)]+H光化学反应过程。双光子激发Cs-H₂混合蒸气中Cs原子至7²D态,荧光中除有泵浦能级发生的直接荧光外,还包含由精细结构碰撞转移产生的敏化荧光,CsH分子是由7D原子与H₂间的三体碰撞反应产生的。利用780 nm激光测量了CsH X¹∑+(v″=0→v″=21)吸收带。△Ⅰ′和△Ⅰ″分别表示泵浦7D_3/2和7D_5/2时的吸收光强。解速率方程组,得到7D_3/2→7D_5/2和7D_5/2→7D_3/2精细结构转移截面分别为(1.3±0.3)×10^-14和(9.8±2.0)×10^-15cm²。从7D_J碰撞到7D以外态的截面分别为(4.0±1.0)×10^-15(对J=3/2)和(3.6+0.9)×10^-15cm²(对J=5/2)。Cs(7D_J)+H₂→CsH+H的反应截面分别是(1.4±0.5)×10^-16(J=3/2)和(1.1±0.4)×10^-16cm²(J=5/2),7D_3/2与H₂的反应活动...更多性大于7D_5/2。     

CaBi2Ta2O9基压电陶瓷改性研究

该文采用传统固态反应法制备了Ca_1-x(Li_0.5Ce_0.4Pr_0.1)_xBi₂Ta₂O₉(x为摩尔分数)陶瓷,研究了(Li_0.5Ce_0.4Pr_0.1)²⁺复合离子不同掺杂浓度对陶瓷结构和电学性质的影响。结果表明,在选定浓度范围内,(Li_0.5Ce_0.4Pr_0.1)²⁺复合离子改善了CaBi₂Ta₂O₉基陶瓷的压电活性与高温下的直流电阻等特性。当x=0.08时,陶瓷具有最佳综合性能,即压电常数d₃₃=10.3 pC/N,居里温度TC=928 ℃,直流电阻率ρ=1.12×10⁶ Ω·cm(650 ℃),介电损耗tan δ=0.026(1 MHz,650 ℃)。     

YPO4:Ln3+(Ln=Eu,Tb)球形荧光粉的合成及其发光性能优化

采用水热法结合高温退火处理制备了YPO₄:Ln³⁺(Ln=Eu,T b)荧光粉。通过X射线 粉末衍射(XRD)、扫描电镜(SEM)和荧光光谱(PL)对样品的结构、形貌和发光性能进行 表征。结果 表明:在水热条件下合成了含结晶水六角相结构的YPO₄·0.8H₂O :Eu³⁺和YPO₄·0.8H₂O:Tb³⁺前躯体;经过 800 ℃高温烧结2h后,前躯体 失去结晶水后得到球形、尺寸均一、表面光滑、四方锆石结构的YPO₄:Eu³⁺和 YPO₄:Tb³⁺荧光粉,颗粒平均粒径约为200 nm。在396 nm波长激发下,YPO₄:Eu³⁺荧光粉可以获得Eu³⁺离 子的跃迁能级⁵D₀→⁷FJ(J=1－4)特征发射,以磁偶极跃迁⁵D₀→⁷F₁(596 nm)的发光强度最强,观察到橙 红色发射,且Eu³⁺的最佳掺杂摩尔分数为11%。同时,YPO₄: Tb³⁺荧光粉在372 nm的光激发下,在548 nm 处的⁵D₄→⁷F₅跃迁具有最高的荧光强度,观察到绿光发 射,且Tb³⁺最佳掺杂摩尔分数为7%。     

Inhibiting the formation of (Au1−xNix)Sn4 and reducing the consumption of Ni metallization in solder joints

The effects of adding a small amount of Cu into eutectic PbSn solder on the interfacial reaction between the solder and the Au/Ni/Cu metallization were studied. Solder balls of two different compositions, 37Pb-63Sn (wt.%) and 36.8Pb-62.7Sn-0.5Cu, were used. The Au layer (1 ± 0.2 μm) and Ni layer (7 ± 1 μm) in the Au/Ni/Cu metallization were deposited by electroplating. After reflow, the solder joints were aged at 160°C for times ranging from 0 h to 2,000 h. For solder joints without Cu added (37Pb-63Sn), a thick layer of (Au_1−xNi_x)Sn₄ was deposited over the Ni₃Sn₄ layer after the aging. This thick layer of (Au_1−xNi_x)Sn₄ can severely weaken the solder joints. However, the addition of 0.5wt.%Cu (36.8Pb-62.7Sn-0.5Cu) completely inhibited the deposition of the (Au_1−xNi_x)Sn₄ layer. Only a layer of (Cu_1-p-qAu_pNi_q)₆Sn₅ formed at the interface of the Cu-doped solder joints. Moreover, it was discovered that the formation of (Cu_1-p-qAu_pNi_q)₆Sn₅ significantly reduced the consumption rate of the Ni layer. This reduction in Ni consumption suggests that a thinner Ni layer can be used in Cu-doped solder joints. Rationalizations for these effects are presented in this paper.     

铃声(情人、蝴蝶)

情人黻德篇;歌词:j情人爱却更多n}x-。_…。;00+ 虚情假意的话不说只用一颗真心默默爱我最珍贵的感动尽在不言中j专辑i《原来我爱你那么多(新歌+精选)一抒情篇》NoKIA诺基亚2100/3210/3310/3315/3350/5210/82502。2 28 3 4抖(1)抖9 1群8 1群1栉2 3 29 7。‘8 68(5)9 09 68 7 2‘7‘‘2‘99 2 283 4#(1)#9 1#8 1#l#2 3 29 7。。9 08 688 6 2。1#299 速度:125爰立信/素尼爱立信T18/T28/T29/T39/T68/A3618,T65 T200/T202(2)0‘‘(2)0。‘(2)0(3)0(4)萍O(1)岸0‘‘(1)岸O(1)挣0(1)撑O(2)O(3)0(2)0‘。(7)6(5)6 7 20 7(2)0‘‘(2)0。‘(2)…     

分子束外延ZnS1－xTex单晶薄膜特性分析

The modified Auger parameter (α′)of Zn and Te in ZnS_1－xTe_x(0≤x≤1) single－crystal alloy thin films grown by MBE is measured with high resolution.It is shown that α′increases almost linearly with x and that the variations of α′Z_n are larger than those of α′_Te.Furthermore,it is similar for the variation of XPS peaks of Te 4d_3/2 and Te 4d_5/2 with x.     

Tb3+,Eu3+共掺杂SrMoO4的合成及发光性能研究

采用水热法合成SrMoO₄:Eu³⁺,SrMoO₄:T b³⁺,Eu³⁺系列荧光粉。利用X射线衍射(XRD)、扫描电镜(SEM)、光电子能谱(EDS)、荧光光谱以及色坐标等研究了所制备荧光粉的结构、形貌和发光性能。XRD检测表 明,试样的 结构属四方晶系。EDS测试证明,合成样品含有相应组分元素,没有杂质元素。荧光光谱测 试表明, 在364、397、467nm波长紫 外光和可见光的激发下,SrMoO₄:xEu³⁺的发光光 谱由[MoO₄]原子团的³T₁,³T₂－¹A₁电荷迁移跃 迁峰(536nm波长,绿光),以及Eu³⁺的⁵D 0→⁷F₁(593nm波长,橙红光), ⁵D₀→⁷F₂(615nm,红光),⁵D₀→⁷F ₃(646nm,红光)跃迁发光峰组成。在243、288和396nm波长紫外 可见光激发下,SrMoO₄:0.05Tb³⁺,0.05Eu³⁺的发射光谱包含了:Tb³⁺ 的⁵D₄→⁷F₆(489nm波长,蓝光 )、⁵D ₄→⁷F₅(546nm波长,绿光)、⁵D₄→⁷F₄(582nm波长,黄光)跃迁的发射峰,Eu³⁺的⁵D₀→⁷F 1(593 nm波长,橙红光),⁵D₀→⁷F 2(615nm 波长,红光),⁵D₀→⁷F₃(646nm波 长,红光)的发射峰。改 变激发波长,可以调节SrMoO₄:0.05Tb³⁺,0.05Eu³⁺的发光颜色,存在Tb 3+→Eu³⁺的能量传递。     

InxAl1-xN/AlN/GaN高电子迁移率晶体管的电学特性

通过自洽求解薛定谔和泊松方程研究了In_xAl_1-xN/AlN/GaN结构的电学特性。通过研究In_xAl_1-xN内部极化效应随铟组分的变化发现,当铟组分为0.41时,总的极化效应为零。通过计算发现,二维电子气密度随着铟组分的增加而减小。对于AlN的厚度存在一个临界值：当AlN的厚度小于临界值时,二维电子气密度随着In_xAl_1-xN厚度的增加而增加;然而,当AlN的厚度大于临界值时,二维电子气密度随着In_xAl_1-xN厚度的增加而减少。对于晶格匹配的In_0.18Al_0.82N/AlN/GaN结构,AlN的厚度临界值为2.8nm。通过计算还发现,AlN厚度临界值随着铟组分的增加而减少。     

An approximation to the weight distribution of binary primitive BCH codes with designed distances 9 and 11 (Corresp.)

Recently Kasami {em et al.} presented a linear programming approach to the weight distribution of binary linear codes [2]. Their approach to compute upper and lower bounds on the weight distribution of binary primitive BCH codes of length2^{m} - 1withm geq 8and designed distance2t + 1with4 leq t leq 5is improved. From these results, the relative deviation of the number of codewords of weightjleq 2^{m-1}from the binomial distribution2^{-mt} left( stackrel{2^{m}-1}{j} right)is shown to be less than 1 percent for the following cases: (1)t = 4, j geq 2t + 1andm geq 16; (2)t = 4, j geq 2t + 3and10 leq m leq 15; (3)t=4, j geq 2t+5and8 leq m leq 9; (4)t=5,j geq 2t+ 1andm geq 20; (5)t=5, j geq 2t+ 3and12 leq m leq 19; (6)t=5, j geq 2t+ 5and10 leq m leq 11; (7)t=5, j geq 2t + 7andm=9; (8)t= 5, j geq 2t+ 9andm = 8.     

Finite-Memory Systems

Let K be a field, k and n positive integers and let matrices with coefficients in K. For any function

PCB拒焊原因分析和改善应用

引言通常情况下电子器件的表面装连工艺（SMT）中最关键的过程就是焊接,而焊接的三个主要作用它们分别是：     

SRAM-Based FPGAs: Testing the Embedded RAM Modules

This paper addresses the problem of testing the RAM mode of the LUT/RAM modules of configurable SRAM-based Field Programmable Gate Arrays (FPGAs) using a minimum number of test configurations. A model of architecture for the LUT/RAM module with N inputs and 2N memory cells is proposed taking into account the LUT and RAM modes. Targeting the RAM mode, we demonstrate that a unique test configuration is required for a single module. The problem is shown equivalent to the test of a classical SRAM circuit allowing to use existing algorithms such as the March tests. We also propose a unique test configuration called pseudo shift register for an m × m array of modules. In the proposed configuration, the circuit operates as a shift register and an adapted version of the MATS++ algorithm called shifted MATS++ is described.     

Organic light emitting devices employing non-doped structure

11H(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) with different thicknesses of 0.05 nm, 0.10 nm and 0.20 nm. For comparing, a doped WOLED was also fabricated, in which C545T and DCM2 are codoped into DPVBi layer to provide blue, green and red emission for obtaining white emission. The maximum luminance and power efficiency of the doped WOLED are 5 765 cd/m2 at 16 V and 5.23 lm/W at 5 V, respectively, and its Commission Internationale de l’Eclairage (CIE) coordinate changes from (0.393 7, 0.445 3) at 5 V to (0.300 7, 0.373 8) at 12 V. When the thickness of the ultrathin C545T layer in non-doped WLEDs increases, the emission luminance increases, but all non-doped devices are in the yellow white region. The device with 0.10-nm-thick C545T has a maximum efficiency of 15.23 cd/A at 8 V and a maximum power efficiency of 6.51 lm/W at 7 V, and its maximum luminance is 10 620 cd/m2 at 16 V. CIE coordinates of non-doped WLEDs with C545T thickness of 0.05 nm, 0.10 nm and 0.20 nm are (0.447 3, 0.455 6), (0.464 0, 0.473 1) and (0.458 4, 0.470 0) at 8 V, respectively. This work has been supported by the Major Project of Science and Technology Office of Fujian Province of China (No.2014H0042), the Natural Science Foundation of Fujian Province of China (No.2015J01664), the Project of Science and Technology Research of Quanzhou in Fujian Province of China (Nos.2013Z125 and 2014Z137), and the 2016 Annual National or Ministries of the Quanzhou Normal University Prepare Research Foundation Project (No.2016YYKJ21).E-mail:lishuangw@126.com      

High-performance two''s complement divider

This paper presents a novel area-efficient two's complement high radix divider without affecting the high speed of the radix-2^k structure. In the proposed approach, only the odd values (rather than all the 2^k values) of the quotient digit set are used to generate the multiples of divisor. Moreover, the set of (N+k+1)-bit additions are replaced with a set of few most significant bits (k+2 bits) additions followed by two (N+3)-bit additions only. The new radix-2^k structure has been evaluated for different values of k. It is shown that the silicon area required by the new design could be as low as 15% of that of the conventional two's complement radix-2^k architecture for radix-64 (20% for radix-32) while the speed is nearly the same. Despite that the proposed algorithm is originally developed in order to improve the performance of the two's complement approach, it has also been compared with the redundant SRT algorithm. The area–time ratios of the new radix-16 and radix-32 dividers to that of the SRT divider are equal to 85% and 77%, respectively.     

Using a WLFSR to Embed Test Pattern Pairs in Minimum Time

We propose a methodology for reducing the number of test cycles needed by a Weighted LFSR (WLFSR) to reproduce a 2P × W test matrix T of P pattern pairs. The methodology introduces a very small number of extra cells into the WLFSR and uses appropriate combinational mapping logic in order to make the time be equal to that required by a (W + )-bit WLFSR to generate vectors containing the W bits of the first pattern for each pair plus the extra bits. We present an algorithm that makes the value of be less than or equal to log₂, where is the size of the maximum subset of pairs in T with identical first patterns. This is a significant improvement over the time E _P,W · P required by a trivial approach that uses a WLFSR with W cells to generate the first patterns of the pairs and a P × W ROM to store the second patterns of the pairs. Experimental results on the application of the methodology to the embedding of test matrices for path delay faults are particularly encouraging, even for very large numbers of test pattern pairs that are necessary for provably high fault coverage.     

Shorts of block operators and infinite networks—A note on the shorted operator: II

Let A_ij i, j=1, 2,..., be operators on a Hilbert spaceX, such that the compound operatorA =A _{ij i, j=1} induces a bounded positive operator onl ₂(X). We show that S(A , theshorted operator (orgeneralized Schur complement), of A can be obtained as the limits of shorts of the operators A_n, where A_n is the truncated version ofA , thenA _n=A _{ij i, j=1} ⁿ . We use these results to study the short-circuit approximations to infinite networks.     

Improved error performance of a 3/4‐Sezginer space‐time block codes

The Alamouti space‐time block code (STBC) achieves full diversity gain at a rate of 1/2. However, the Alamouti scheme does not provide multiplexing gain. The Silver code offers both diversity and multiplexing gain. It has a minimum normalization determinant of . The Golden code is another STBC that offers both diversity and multiplexing gain. The Golden code is ranked higher than the Silver code because of its lower minimum normalization determinant of , however, the golden code suffers from a high detection complexity in the modulation order of M⁴. The 3/4‐Sezginer code is another STBC, which compromises between the Alamouti scheme and the Golden code in terms of diversity gain and multiplexing gain. The 3/4‐Sezginer code achieves full diversity and half of multiplexing gain. The uncoded space‐time labeling diversity (USTLD) is a recent scheme that improves the error performance when applied to the STBC in multiple‐input multiple‐output (MIMO) systems and will be applied to the 3/4‐Sezginer STBC to improve the error performance in this paper. The theoretical error probability for both the 3/4‐Sezginer STBC and the improved system is formulated using the union bound in this paper. The theoretical error probabilities of both 16‐QAM and 64‐QAM are validated through Monte Carlo simulation. The simulation and theoretical results show that the proposed system with 4 N_R can achieve an SNR gain of 1 dB for 16‐QAM and 1.2 dB 64‐QAM at a bit error rate (BER) of 10^?6.     

Exploiting W. Ellison model for seawater communication at gigahertz frequencies based on world ocean atlas data

Electromagnetic (EM) waves used to send signals under seawater are normally restricted to low frequencies () because of sudden exponential increases of attenuation () at higher . The mathematics of EM wave propagation in seawater demonstrate dependence on relative permeability (), relative permittivity (), conductivity (), and of transmission. Estimation of and based on the W. Ellison interpolation model was performed for averaged real‐time data of temperature () and salinity () from 1955 to 2012 for all oceans with latitude/longitude points and 101 depth points up to 5500 m. Estimation of parameters such as real and imaginary parts of , , , , loss tangent (tan ), propagation velocity (), phase constant (), and contributes to absorption loss () for seawater channels carried out by using normal distribution fit in the 3 GHz–40 GHz range. We also estimated total path loss () in seawater for given transmission power and antenna (dipole) gain. MATLAB is the simulation tool used for analysis.